DE60310460D1 - Verfahren und deren Maske zur Musterherstellung in einer Polymerschicht - Google Patents
Verfahren und deren Maske zur Musterherstellung in einer PolymerschichtInfo
- Publication number
- DE60310460D1 DE60310460D1 DE60310460T DE60310460T DE60310460D1 DE 60310460 D1 DE60310460 D1 DE 60310460D1 DE 60310460 T DE60310460 T DE 60310460T DE 60310460 T DE60310460 T DE 60310460T DE 60310460 D1 DE60310460 D1 DE 60310460D1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- polymer layer
- pattern production
- pattern
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920000642 polymer Polymers 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Thin Film Transistor (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58744 | 2002-01-23 | ||
US10/058,744 US6653030B2 (en) | 2002-01-23 | 2002-01-23 | Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60310460D1 true DE60310460D1 (de) | 2007-02-01 |
DE60310460T2 DE60310460T2 (de) | 2007-12-13 |
Family
ID=22018665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60310460T Expired - Lifetime DE60310460T2 (de) | 2002-01-23 | 2003-01-23 | Verfahren und deren Maske zur Musterherstellung in einer Polymerschicht |
Country Status (7)
Country | Link |
---|---|
US (1) | US6653030B2 (de) |
EP (1) | EP1331516B1 (de) |
JP (1) | JP4242145B2 (de) |
KR (1) | KR20030080183A (de) |
CN (1) | CN1434349A (de) |
DE (1) | DE60310460T2 (de) |
TW (1) | TWI271785B (de) |
Families Citing this family (96)
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DE10393887D2 (de) * | 2002-10-02 | 2005-08-25 | Kurz Leonhard Fa | Folie mit organischen Halbleitern |
CN1260616C (zh) * | 2002-12-13 | 2006-06-21 | 国际商业机器公司 | 制造微结构的方法 |
JP4036820B2 (ja) * | 2002-12-18 | 2008-01-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | サブ波長構造体の製造 |
US8268446B2 (en) | 2003-09-23 | 2012-09-18 | The University Of North Carolina At Chapel Hill | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US9040090B2 (en) | 2003-12-19 | 2015-05-26 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
KR20120105062A (ko) | 2003-12-19 | 2012-09-24 | 더 유니버시티 오브 노쓰 캐롤라이나 엣 채플 힐 | 소프트 또는 임프린트 리소그래피를 이용하여 분리된 마이크로- 및 나노- 구조를 제작하는 방법 |
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EP1730591B1 (de) * | 2004-01-12 | 2011-08-03 | Regents of the University of California | Elektrische lithographie auf nanomassstab |
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US7799699B2 (en) | 2004-06-04 | 2010-09-21 | The Board Of Trustees Of The University Of Illinois | Printable semiconductor structures and related methods of making and assembling |
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KR102288981B1 (ko) * | 2017-04-17 | 2021-08-13 | 에스케이하이닉스 주식회사 | 임프린트 템플레이트 및 임프린트 패턴 형성 방법 |
JP7027099B2 (ja) | 2017-09-29 | 2022-03-01 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
US10663869B2 (en) | 2017-12-11 | 2020-05-26 | Canon Kabushiki Kaisha | Imprint system and imprinting process with spatially non-uniform illumination |
US10948818B2 (en) | 2018-03-19 | 2021-03-16 | Applied Materials, Inc. | Methods and apparatus for creating a large area imprint without a seam |
US20200278605A1 (en) * | 2019-03-01 | 2020-09-03 | Applied Materials, Inc. | Method and apparatus for stamp generation and curing |
US11181819B2 (en) | 2019-05-31 | 2021-11-23 | Canon Kabushiki Kaisha | Frame curing method for extrusion control |
CN111522206B (zh) * | 2020-04-29 | 2021-09-21 | 中国科学院光电技术研究所 | 一种基于反射式光场增强的微纳光印制造方法 |
US11747731B2 (en) | 2020-11-20 | 2023-09-05 | Canon Kabishiki Kaisha | Curing a shaped film using multiple images of a spatial light modulator |
KR102552654B1 (ko) * | 2022-10-12 | 2023-07-06 | 주식회사 기가레인 | 디몰더 장치 및 이를 이용한 디몰딩 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0580530A (ja) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
DE69724159T2 (de) * | 1997-09-19 | 2004-05-06 | International Business Machines Corp. | Optische lithographie mit extrem hoher auflösung |
EP1001311A1 (de) * | 1998-11-16 | 2000-05-17 | International Business Machines Corporation | Gerät zur Herstellung von Strukturen |
US6296991B1 (en) * | 1999-12-22 | 2001-10-02 | United Microelectronics Corp. | Bi-focus exposure process |
AU2001297642A1 (en) * | 2000-10-12 | 2002-09-04 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
-
2002
- 2002-01-23 US US10/058,744 patent/US6653030B2/en not_active Expired - Lifetime
- 2002-11-26 TW TW091134361A patent/TWI271785B/zh not_active IP Right Cessation
- 2002-12-18 JP JP2002366804A patent/JP4242145B2/ja not_active Expired - Fee Related
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2003
- 2003-01-22 KR KR10-2003-0004161A patent/KR20030080183A/ko not_active Application Discontinuation
- 2003-01-23 DE DE60310460T patent/DE60310460T2/de not_active Expired - Lifetime
- 2003-01-23 EP EP03250420A patent/EP1331516B1/de not_active Expired - Fee Related
- 2003-01-23 CN CN03103377A patent/CN1434349A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1331516A2 (de) | 2003-07-30 |
JP2003249444A (ja) | 2003-09-05 |
US20030138704A1 (en) | 2003-07-24 |
TW200302506A (en) | 2003-08-01 |
KR20030080183A (ko) | 2003-10-11 |
TWI271785B (en) | 2007-01-21 |
EP1331516A3 (de) | 2003-10-15 |
US6653030B2 (en) | 2003-11-25 |
JP4242145B2 (ja) | 2009-03-18 |
EP1331516B1 (de) | 2006-12-20 |
CN1434349A (zh) | 2003-08-06 |
DE60310460T2 (de) | 2007-12-13 |
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