DE60236296D1 - - Google Patents
Info
- Publication number
- DE60236296D1 DE60236296D1 DE60236296T DE60236296T DE60236296D1 DE 60236296 D1 DE60236296 D1 DE 60236296D1 DE 60236296 T DE60236296 T DE 60236296T DE 60236296 T DE60236296 T DE 60236296T DE 60236296 D1 DE60236296 D1 DE 60236296D1
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001204674A JP3364488B1 (ja) | 2001-07-05 | 2001-07-05 | 反応容器のクリーニング方法及び成膜装置 |
PCT/JP2002/002200 WO2003004722A1 (fr) | 2001-07-05 | 2002-03-08 | Procede de nettoyage de cuve de reaction et systeme de depot de film |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60236296D1 true DE60236296D1 (de) | 2010-06-17 |
Family
ID=19041104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60236296T Expired - Lifetime DE60236296D1 (de) | 2001-07-05 | 2002-03-08 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7546840B2 (de) |
EP (1) | EP1422316B1 (de) |
JP (1) | JP3364488B1 (de) |
KR (1) | KR100861817B1 (de) |
DE (1) | DE60236296D1 (de) |
TW (1) | TWI250571B (de) |
WO (1) | WO2003004722A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60329638D1 (de) * | 2002-08-02 | 2009-11-19 | Idemitsu Kosan Co | Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat |
TWI365919B (en) * | 2004-12-28 | 2012-06-11 | Tokyo Electron Ltd | Film formation apparatus and method of using the same |
US8440115B2 (en) * | 2007-07-06 | 2013-05-14 | Sumitomo Metal Mining Co., Ltd. | Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same |
RU2478565C2 (ru) * | 2008-06-16 | 2013-04-10 | Осака Гэс Ко., Лтд. | Способ работы реактора с рутениевым катализатором |
JP6125846B2 (ja) * | 2012-03-22 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
JP5766647B2 (ja) * | 2012-03-28 | 2015-08-19 | 東京エレクトロン株式会社 | 熱処理システム、熱処理方法、及び、プログラム |
JP2024503424A (ja) * | 2021-01-19 | 2024-01-25 | ラム リサーチ コーポレーション | 金属エッチング残渣を有するチャンバの構成要素を洗浄する方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5702970A (en) * | 1995-06-26 | 1997-12-30 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating a capacitor of a semiconductor device |
US6003526A (en) * | 1997-09-12 | 1999-12-21 | Taiwan Semiconductor Manufacturing Company, Ltd | In-sit chamber cleaning method |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
US6143192A (en) * | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
JP3494933B2 (ja) * | 1998-10-26 | 2004-02-09 | 株式会社ルネサステクノロジ | 半導体製造装置のクリ−ニング方法 |
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
JP3433392B2 (ja) | 1999-01-12 | 2003-08-04 | セントラル硝子株式会社 | クリーニングガス及び真空処理装置のクリーニング方法 |
US6176930B1 (en) * | 1999-03-04 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for controlling a flow of process material to a deposition chamber |
JP2000265275A (ja) * | 1999-03-15 | 2000-09-26 | Central Glass Co Ltd | クリーニング方法 |
DE60120278T8 (de) * | 2000-06-21 | 2007-09-06 | Tokyo Electron Ltd. | Wärmebehandlungsanlage und Verfahren zu ihrer Reinigung |
-
2001
- 2001-07-05 JP JP2001204674A patent/JP3364488B1/ja not_active Expired - Fee Related
-
2002
- 2002-03-08 WO PCT/JP2002/002200 patent/WO2003004722A1/ja active Application Filing
- 2002-03-08 KR KR1020047000022A patent/KR100861817B1/ko not_active IP Right Cessation
- 2002-03-08 EP EP02702843A patent/EP1422316B1/de not_active Expired - Fee Related
- 2002-03-08 DE DE60236296T patent/DE60236296D1/de not_active Expired - Lifetime
- 2002-03-08 US US10/480,488 patent/US7546840B2/en not_active Expired - Fee Related
- 2002-03-12 TW TW091104572A patent/TWI250571B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI250571B (en) | 2006-03-01 |
EP1422316B1 (de) | 2010-05-05 |
JP2003013232A (ja) | 2003-01-15 |
JP3364488B1 (ja) | 2003-01-08 |
US20040144320A1 (en) | 2004-07-29 |
KR100861817B1 (ko) | 2008-10-07 |
EP1422316A4 (de) | 2005-07-27 |
EP1422316A1 (de) | 2004-05-26 |
WO2003004722A1 (fr) | 2003-01-16 |
US7546840B2 (en) | 2009-06-16 |
EP1422316A9 (de) | 2007-07-04 |
KR20040030784A (ko) | 2004-04-09 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |