DE60229488D1 - Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung - Google Patents

Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung

Info

Publication number
DE60229488D1
DE60229488D1 DE60229488T DE60229488T DE60229488D1 DE 60229488 D1 DE60229488 D1 DE 60229488D1 DE 60229488 T DE60229488 T DE 60229488T DE 60229488 T DE60229488 T DE 60229488T DE 60229488 D1 DE60229488 D1 DE 60229488D1
Authority
DE
Germany
Prior art keywords
production
piezoelectric device
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229488T
Other languages
English (en)
Inventor
Toshikatsu Kashiwaya
Mutsumi Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60229488D1 publication Critical patent/DE60229488D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE60229488T 2001-12-20 2002-12-19 Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung Expired - Lifetime DE60229488D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001388315A JP3953806B2 (ja) 2001-12-20 2001-12-20 圧電素子、及びその製造方法

Publications (1)

Publication Number Publication Date
DE60229488D1 true DE60229488D1 (de) 2008-12-04

Family

ID=19188136

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229488T Expired - Lifetime DE60229488D1 (de) 2001-12-20 2002-12-19 Piezoelektrisches Bauelement und Verfahren zu dessen Herstellung

Country Status (3)

Country Link
EP (1) EP1321987B1 (de)
JP (1) JP3953806B2 (de)
DE (1) DE60229488D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003067673A1 (fr) * 2002-02-08 2003-08-14 Ngk Insulators, Ltd. Element piezoelectrique multicouche et son procede de fabrication
JP2004136461A (ja) 2002-10-15 2004-05-13 Brother Ind Ltd 液体圧力発生機構
JP3999156B2 (ja) * 2003-03-31 2007-10-31 日本碍子株式会社 圧電／電歪膜型素子及び圧電／電歪磁器組成物
JP4777605B2 (ja) 2003-05-21 2011-09-21 日本碍子株式会社 多層型圧電／電歪素子
JP2005170693A (ja) 2003-12-08 2005-06-30 Ngk Insulators Ltd 圧電／電歪磁器組成物、圧電／電歪体、及び圧電／電歪膜型素子
JP2005183701A (ja) * 2003-12-19 2005-07-07 Murata Mfg Co Ltd 圧電素子及びその製造方法
JP2005247619A (ja) 2004-03-03 2005-09-15 Ngk Insulators Ltd 圧電／電歪磁器組成物、圧電／電歪体、及び圧電／電歪膜型素子
JP4537212B2 (ja) 2005-01-11 2010-09-01 日本碍子株式会社 圧電／電歪素子の製造方法
JP2006202990A (ja) * 2005-01-20 2006-08-03 Ngk Insulators Ltd 圧電素子
JP5004484B2 (ja) 2006-03-23 2012-08-22 日本碍子株式会社 誘電体デバイス
US7727585B2 (en) 2007-02-19 2010-06-01 Ngk Insulators, Ltd. Dielectric device and its manufacturing method
US7727584B2 (en) 2007-02-19 2010-06-01 Ngk Insulators, Ltd. Dielectric device and its manufacturing method
JP5295945B2 (ja) 2007-02-20 2013-09-18 日本碍子株式会社 圧電／電歪素子
JP4538493B2 (ja) 2007-12-18 2010-09-08 日本碍子株式会社 圧電／電歪膜型素子
JP5054149B2 (ja) * 2010-04-26 2012-10-24 日本碍子株式会社 圧電／電歪膜型素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503519B1 (de) * 1970-11-11 1975-02-05
JPS60102779A (ja) * 1983-11-09 1985-06-06 Hitachi Metals Ltd 圧電磁器組成物
MY104019A (en) * 1988-05-27 1993-10-30 Mitsui Chemicals Inc Ferroelectric ceramic material.
US5275988A (en) * 1991-04-12 1994-01-04 Nec Corporation Ceramic composition
JP3151644B2 (ja) * 1993-03-08 2001-04-03 日本碍子株式会社 圧電／電歪膜型素子
US5900274A (en) * 1998-05-01 1999-05-04 Eastman Kodak Company Controlled composition and crystallographic changes in forming functionally gradient piezoelectric transducers
WO2001093345A1 (en) * 2000-05-26 2001-12-06 Ceramtec Ag Internal electrode material for piezoceramic multilayer actuators

Also Published As

Publication number Publication date
EP1321987A2 (de) 2003-06-25
EP1321987A3 (de) 2004-12-01
JP3953806B2 (ja) 2007-08-08
EP1321987B1 (de) 2008-10-22
JP2002217465A (ja) 2002-08-02

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Legal Events

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