DE60225957D1 - Halbleiteranordnungsträger - Google Patents

Halbleiteranordnungsträger

Info

Publication number
DE60225957D1
DE60225957D1 DE60225957T DE60225957T DE60225957D1 DE 60225957 D1 DE60225957 D1 DE 60225957D1 DE 60225957 T DE60225957 T DE 60225957T DE 60225957 T DE60225957 T DE 60225957T DE 60225957 D1 DE60225957 D1 DE 60225957D1
Authority
DE
Germany
Prior art keywords
semiconductor device
device carrier
carrier
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60225957T
Other languages
English (en)
Inventor
Hiromitsu Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Application granted granted Critical
Publication of DE60225957D1 publication Critical patent/DE60225957D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/226—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor using microstructures, e.g. silicon spreading resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE60225957T 2001-02-05 2002-02-04 Halbleiteranordnungsträger Expired - Lifetime DE60225957D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001028881A JP3929705B2 (ja) 2001-02-05 2001-02-05 半導体装置及びチップキャリア

Publications (1)

Publication Number Publication Date
DE60225957D1 true DE60225957D1 (de) 2008-05-21

Family

ID=18893298

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225957T Expired - Lifetime DE60225957D1 (de) 2001-02-05 2002-02-04 Halbleiteranordnungsträger

Country Status (4)

Country Link
US (1) US6975031B2 (de)
EP (1) EP1229315B1 (de)
JP (1) JP3929705B2 (de)
DE (1) DE60225957D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196355B2 (en) 2003-03-07 2007-03-27 Avanex Corporation Integrated thermal sensor for optoelectronic modules
FR2852145B1 (fr) * 2003-03-07 2005-05-27 Cit Alcatel Module optoelectronique comportant un capteur thermique integre
US20060239314A1 (en) * 2005-04-20 2006-10-26 Hosking Lucy G Electro-optic transducer die mounted directly upon a temperature sensing device
US20060237807A1 (en) * 2005-04-20 2006-10-26 Hosking Lucy G Electro-optic transducer die including a temperature sensing PN junction diode
US7701988B2 (en) * 2005-04-20 2010-04-20 Finisar Corporation Optical transmit assembly including thermally isolated laser, temperature sensor, and temperature driver
US7706421B2 (en) * 2005-04-20 2010-04-27 Finisar Corporation Temperature sensing device patterned on an electro-optic transducer die
US9172209B2 (en) * 2007-02-01 2015-10-27 Finisar Corporation Resistive heating element for enabling laser operation
US7832944B2 (en) 2007-11-08 2010-11-16 Finisar Corporation Optoelectronic subassembly with integral thermoelectric cooler driver
KR101018278B1 (ko) * 2008-09-19 2011-03-04 전자부품연구원 파장가변 소자 패키지
US9692207B2 (en) 2011-09-30 2017-06-27 Aurrion, Inc. Tunable laser with integrated wavelength reference
DE102012111458B4 (de) * 2012-11-27 2022-12-08 Tdk Electronics Ag Halbleitervorrichtung
JP2015065391A (ja) * 2013-09-26 2015-04-09 アルプス電気株式会社 映像表示装置
JP2020009879A (ja) * 2018-07-06 2020-01-16 太陽誘電株式会社 回路基板および回路モジュール

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2061002B (en) * 1979-10-11 1983-10-19 Matsushita Electric Ind Co Ltd Method for making a carbide thin film thermistor
JPS6370589A (ja) 1986-09-12 1988-03-30 Nec Corp 半導体レ−ザモジユ−ル
DE3906086A1 (de) * 1988-02-29 1989-08-31 Mitsubishi Electric Corp Laserdrucker
JPH03131003A (ja) * 1989-10-16 1991-06-04 Kobe Steel Ltd ダイヤモンド薄膜サーミスタ
JP3035852B2 (ja) 1990-07-18 2000-04-24 富士通株式会社 半導体レーザモジュール
US5254968A (en) * 1992-06-15 1993-10-19 General Motors Corporation Electrically conductive plastic speed control resistor for an automotive blower motor
JP3312752B2 (ja) 1992-08-11 2002-08-12 石塚電子株式会社 薄膜サーミスタ
JP3175887B2 (ja) * 1992-10-27 2001-06-11 株式会社半導体エネルギー研究所 測定装置
US5466484A (en) * 1993-09-29 1995-11-14 Motorola, Inc. Resistor structure and method of setting a resistance value
US5847436A (en) * 1994-03-18 1998-12-08 Kabushiki Kaisha Tokai Rika Denki Seisakusho Bipolar transistor having integrated thermistor shunt
DE19542162C2 (de) * 1995-11-11 2000-11-23 Abb Research Ltd Überstrombegrenzer
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
FR2780784B1 (fr) * 1998-07-06 2000-08-11 Commissariat Energie Atomique Detecteur thermique a amplification par effet bolometrique
TW479123B (en) * 1999-03-24 2002-03-11 Ishizuka Electronics Corp Thermopile-type infrared sensor and process for producing the same
KR100674692B1 (ko) * 1999-06-03 2007-01-26 마쯔시다덴기산교 가부시키가이샤 박막서미스터소자 및 박막서미스터소자의 제조방법
US6455823B1 (en) * 2000-10-06 2002-09-24 Illinois Tool Works Inc. Electrical heater with thermistor

Also Published As

Publication number Publication date
JP3929705B2 (ja) 2007-06-13
US20020105045A1 (en) 2002-08-08
EP1229315A1 (de) 2002-08-07
EP1229315B1 (de) 2008-04-09
US6975031B2 (en) 2005-12-13
JP2002231862A (ja) 2002-08-16

Similar Documents

Publication Publication Date Title
DE60213889D1 (de) Halbleiteranordnung
DE60006892D1 (de) Halbleiteranordnung
DE60238891D1 (de) Halbleiterspeicheranordnung
DE60222354D1 (de) Halbleiterspeicheranordnung
EP1378949A4 (de) Lichtemittierendes halbleiterbauelement
DE60331799D1 (de) Halbleitervorrichtung
DE60004614D1 (de) Integrierte Halbleitervorrichtung
DE69935182D1 (de) Halbleiteranordnung
FR2817658B1 (fr) Dispositif semi-conducteur
FR2826803B1 (fr) Dispositif a semiconducteur
DE69937739D1 (de) Halbleitervorrichtung
DE69912565D1 (de) Halbleiteranordnung
DE60203739D1 (de) Komplexe verpackungsvorrichtung
DE60211244D1 (de) Halbleiterbauelement
DE60142141D1 (de) Halbleiterbauelement
DE60005959D1 (de) Halbleiteranordnung
DE69923374D1 (de) Halbleiteranordnung
FR2810160B1 (fr) Dispositif a semiconducteur
DE60225957D1 (de) Halbleiteranordnungsträger
DE10191585B8 (de) Halbleitervorrichtung
FI20010668A (fi) Paikannuslaite
DE60141945D1 (de) Halbleiterspeicheranordnung
DE60019144D1 (de) Halbleitervorrichtung
DE60041030D1 (de) Halbleiterbauelement
ATA5612001A (de) Halbleitermodul

Legal Events

Date Code Title Description
8332 No legal effect for de