DE60223761D1 - Polierzusammensetzung und Polierverfahren unter deren Verwendung - Google Patents
Polierzusammensetzung und Polierverfahren unter deren VerwendungInfo
- Publication number
- DE60223761D1 DE60223761D1 DE60223761T DE60223761T DE60223761D1 DE 60223761 D1 DE60223761 D1 DE 60223761D1 DE 60223761 T DE60223761 T DE 60223761T DE 60223761 T DE60223761 T DE 60223761T DE 60223761 D1 DE60223761 D1 DE 60223761D1
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- composition
- polishing composition
- polishing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001242235A JP4954398B2 (ja) | 2001-08-09 | 2001-08-09 | 研磨用組成物およびそれを用いた研磨方法 |
JP2001242235 | 2001-08-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60223761D1 true DE60223761D1 (de) | 2008-01-10 |
DE60223761T2 DE60223761T2 (de) | 2008-10-30 |
Family
ID=19072544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60223761T Expired - Lifetime DE60223761T2 (de) | 2001-08-09 | 2002-08-07 | Polierzusammensetzung und Polierverfahren unter deren Verwendung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6814766B2 (de) |
EP (1) | EP1283250B1 (de) |
JP (1) | JP4954398B2 (de) |
KR (1) | KR100928167B1 (de) |
CN (1) | CN1261520C (de) |
DE (1) | DE60223761T2 (de) |
SG (1) | SG99407A1 (de) |
TW (1) | TW536451B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US20040140288A1 (en) * | 1996-07-25 | 2004-07-22 | Bakul Patel | Wet etch of titanium-tungsten film |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
EP1489650B1 (de) * | 2002-03-04 | 2010-07-14 | Fujimi Incorporated | Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur |
JP4083528B2 (ja) | 2002-10-01 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
DE10246756B4 (de) * | 2002-10-07 | 2006-03-16 | Novar Gmbh | Branderkennungsverfahren und Brandmelder zu dessen Durchführung |
GB2395486B (en) * | 2002-10-30 | 2006-08-16 | Kao Corp | Polishing composition |
WO2005019364A1 (en) * | 2003-08-14 | 2005-03-03 | Ekc Technology, Inc. | Periodic acid compositions for polishing ruthenium/high k substrates |
US20050070109A1 (en) * | 2003-09-30 | 2005-03-31 | Feller A. Daniel | Novel slurry for chemical mechanical polishing of metals |
JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
US7316976B2 (en) * | 2004-05-19 | 2008-01-08 | Dupont Air Products Nanomaterials Llc | Polishing method to reduce dishing of tungsten on a dielectric |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
US20080220610A1 (en) * | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
US7501346B2 (en) * | 2006-07-21 | 2009-03-10 | Cabot Microelectronics Corporation | Gallium and chromium ions for oxide rate enhancement |
JP2008135453A (ja) * | 2006-11-27 | 2008-06-12 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2008135452A (ja) * | 2006-11-27 | 2008-06-12 | Fujimi Inc | 研磨用組成物及び研磨方法 |
KR100980607B1 (ko) * | 2007-11-08 | 2010-09-07 | 주식회사 하이닉스반도체 | 루테늄 연마용 슬러리 및 그를 이용한 연마 방법 |
SG11201402486TA (en) | 2012-03-30 | 2014-11-27 | Nitta Haas Inc | Polishing composition |
JP6584936B2 (ja) * | 2015-11-30 | 2019-10-02 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
EP0792515A1 (de) * | 1994-11-18 | 1997-09-03 | Advanced Micro Devices, Inc. | Verfahren zum herstellen einer chemisch-mechanischen polieraufschlämmung und die polieraufschlämmung |
US5958228A (en) | 1995-08-24 | 1999-09-28 | Nippondenso Co., Ltd. | Method of and an apparatus for producing a mineral water |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
DE69734868T2 (de) | 1996-07-25 | 2006-08-03 | Dupont Air Products Nanomaterials L.L.C., Tempe | Zusammensetzung und verfahren zum chemisch-mechanischen polieren |
US6001269A (en) | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
JPH11214338A (ja) * | 1998-01-20 | 1999-08-06 | Memc Kk | シリコンウェハーの研磨方法 |
US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
JP4113288B2 (ja) * | 1998-09-04 | 2008-07-09 | スピードファム株式会社 | 研磨用組成物およびそれを用いたシリコンウェーハの加工方法 |
JP2001031953A (ja) * | 1999-07-19 | 2001-02-06 | Tokuyama Corp | 金属膜用研磨剤 |
WO2001021724A1 (en) * | 1999-09-23 | 2001-03-29 | Rodel Holdings, Inc. | Slurry solution for polishing copper or tungsten |
TW572980B (en) * | 2000-01-12 | 2004-01-21 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process |
US6332831B1 (en) | 2000-04-06 | 2001-12-25 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
US6328774B1 (en) | 2000-02-23 | 2001-12-11 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
JP2002075927A (ja) | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
-
2001
- 2001-08-09 JP JP2001242235A patent/JP4954398B2/ja not_active Expired - Lifetime
-
2002
- 2002-07-30 TW TW091117063A patent/TW536451B/zh not_active IP Right Cessation
- 2002-07-30 SG SG200204577A patent/SG99407A1/en unknown
- 2002-08-07 EP EP02255534A patent/EP1283250B1/de not_active Expired - Fee Related
- 2002-08-07 DE DE60223761T patent/DE60223761T2/de not_active Expired - Lifetime
- 2002-08-07 KR KR1020020046507A patent/KR100928167B1/ko not_active IP Right Cessation
- 2002-08-08 US US10/214,176 patent/US6814766B2/en not_active Expired - Lifetime
- 2002-08-09 CN CNB021418144A patent/CN1261520C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6814766B2 (en) | 2004-11-09 |
EP1283250A1 (de) | 2003-02-12 |
CN1261520C (zh) | 2006-06-28 |
JP2003059877A (ja) | 2003-02-28 |
US20030084815A1 (en) | 2003-05-08 |
EP1283250B1 (de) | 2007-11-28 |
TW536451B (en) | 2003-06-11 |
KR20030014614A (ko) | 2003-02-19 |
SG99407A1 (en) | 2003-10-27 |
DE60223761T2 (de) | 2008-10-30 |
JP4954398B2 (ja) | 2012-06-13 |
CN1407050A (zh) | 2003-04-02 |
KR100928167B1 (ko) | 2009-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |