DE60223761D1 - Polierzusammensetzung und Polierverfahren unter deren Verwendung - Google Patents

Polierzusammensetzung und Polierverfahren unter deren Verwendung

Info

Publication number
DE60223761D1
DE60223761D1 DE60223761T DE60223761T DE60223761D1 DE 60223761 D1 DE60223761 D1 DE 60223761D1 DE 60223761 T DE60223761 T DE 60223761T DE 60223761 T DE60223761 T DE 60223761T DE 60223761 D1 DE60223761 D1 DE 60223761D1
Authority
DE
Germany
Prior art keywords
polishing
composition
polishing composition
polishing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60223761T
Other languages
English (en)
Other versions
DE60223761T2 (de
Inventor
Koji Ohno
Kenji Sakai
Katsuyoshi Ina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Application granted granted Critical
Publication of DE60223761D1 publication Critical patent/DE60223761D1/de
Publication of DE60223761T2 publication Critical patent/DE60223761T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE60223761T 2001-08-09 2002-08-07 Polierzusammensetzung und Polierverfahren unter deren Verwendung Expired - Lifetime DE60223761T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001242235A JP4954398B2 (ja) 2001-08-09 2001-08-09 研磨用組成物およびそれを用いた研磨方法
JP2001242235 2001-08-09

Publications (2)

Publication Number Publication Date
DE60223761D1 true DE60223761D1 (de) 2008-01-10
DE60223761T2 DE60223761T2 (de) 2008-10-30

Family

ID=19072544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60223761T Expired - Lifetime DE60223761T2 (de) 2001-08-09 2002-08-07 Polierzusammensetzung und Polierverfahren unter deren Verwendung

Country Status (8)

Country Link
US (1) US6814766B2 (de)
EP (1) EP1283250B1 (de)
JP (1) JP4954398B2 (de)
KR (1) KR100928167B1 (de)
CN (1) CN1261520C (de)
DE (1) DE60223761T2 (de)
SG (1) SG99407A1 (de)
TW (1) TW536451B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
EP1489650B1 (de) * 2002-03-04 2010-07-14 Fujimi Incorporated Polierzusammensetzung und verfahren zur bildung einer verdrahtungsstruktur
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
DE10246756B4 (de) * 2002-10-07 2006-03-16 Novar Gmbh Branderkennungsverfahren und Brandmelder zu dessen Durchführung
GB2395486B (en) * 2002-10-30 2006-08-16 Kao Corp Polishing composition
WO2005019364A1 (en) * 2003-08-14 2005-03-03 Ekc Technology, Inc. Periodic acid compositions for polishing ruthenium/high k substrates
US20050070109A1 (en) * 2003-09-30 2005-03-31 Feller A. Daniel Novel slurry for chemical mechanical polishing of metals
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US7316976B2 (en) * 2004-05-19 2008-01-08 Dupont Air Products Nanomaterials Llc Polishing method to reduce dishing of tungsten on a dielectric
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US7501346B2 (en) * 2006-07-21 2009-03-10 Cabot Microelectronics Corporation Gallium and chromium ions for oxide rate enhancement
JP2008135453A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
JP2008135452A (ja) * 2006-11-27 2008-06-12 Fujimi Inc 研磨用組成物及び研磨方法
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
SG11201402486TA (en) 2012-03-30 2014-11-27 Nitta Haas Inc Polishing composition
JP6584936B2 (ja) * 2015-11-30 2019-10-02 花王株式会社 磁気ディスク基板用研磨液組成物

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
EP0792515A1 (de) * 1994-11-18 1997-09-03 Advanced Micro Devices, Inc. Verfahren zum herstellen einer chemisch-mechanischen polieraufschlämmung und die polieraufschlämmung
US5958228A (en) 1995-08-24 1999-09-28 Nippondenso Co., Ltd. Method of and an apparatus for producing a mineral water
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
DE69734868T2 (de) 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US6001269A (en) 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
JPH11214338A (ja) * 1998-01-20 1999-08-06 Memc Kk シリコンウェハーの研磨方法
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP4113288B2 (ja) * 1998-09-04 2008-07-09 スピードファム株式会社 研磨用組成物およびそれを用いたシリコンウェーハの加工方法
JP2001031953A (ja) * 1999-07-19 2001-02-06 Tokuyama Corp 金属膜用研磨剤
WO2001021724A1 (en) * 1999-09-23 2001-03-29 Rodel Holdings, Inc. Slurry solution for polishing copper or tungsten
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6332831B1 (en) 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6328774B1 (en) 2000-02-23 2001-12-11 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2002075927A (ja) 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates

Also Published As

Publication number Publication date
US6814766B2 (en) 2004-11-09
EP1283250A1 (de) 2003-02-12
CN1261520C (zh) 2006-06-28
JP2003059877A (ja) 2003-02-28
US20030084815A1 (en) 2003-05-08
EP1283250B1 (de) 2007-11-28
TW536451B (en) 2003-06-11
KR20030014614A (ko) 2003-02-19
SG99407A1 (en) 2003-10-27
DE60223761T2 (de) 2008-10-30
JP4954398B2 (ja) 2012-06-13
CN1407050A (zh) 2003-04-02
KR100928167B1 (ko) 2009-11-25

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Legal Events

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