DE60217526D1 - Tertiäre cam-zelle - Google Patents
Tertiäre cam-zelleInfo
- Publication number
- DE60217526D1 DE60217526D1 DE60217526T DE60217526T DE60217526D1 DE 60217526 D1 DE60217526 D1 DE 60217526D1 DE 60217526 T DE60217526 T DE 60217526T DE 60217526 T DE60217526 T DE 60217526T DE 60217526 D1 DE60217526 D1 DE 60217526D1
- Authority
- DE
- Germany
- Prior art keywords
- cam cell
- tertiary cam
- tertiary
- cell
- cam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32446201P | 2001-09-25 | 2001-09-25 | |
US324462P | 2001-09-25 | ||
US202003 | 2002-07-25 | ||
US10/202,003 US6781856B2 (en) | 2001-09-25 | 2002-07-25 | Tertiary CAM cell |
PCT/US2002/029749 WO2003028034A2 (en) | 2001-09-25 | 2002-09-23 | A tertiary cam cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60217526D1 true DE60217526D1 (de) | 2007-02-22 |
DE60217526T2 DE60217526T2 (de) | 2007-11-08 |
Family
ID=26897277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60217526T Expired - Lifetime DE60217526T2 (de) | 2001-09-25 | 2002-09-23 | Tertiäre cam-zelle |
Country Status (8)
Country | Link |
---|---|
US (2) | US6781856B2 (de) |
EP (1) | EP1433180B1 (de) |
JP (2) | JP3981665B2 (de) |
KR (1) | KR100565456B1 (de) |
CN (1) | CN100440379C (de) |
AU (1) | AU2002335768A1 (de) |
DE (1) | DE60217526T2 (de) |
WO (1) | WO2003028034A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6751110B2 (en) * | 2002-03-08 | 2004-06-15 | Micron Technology, Inc. | Static content addressable memory cell |
US20060203529A1 (en) * | 2003-09-05 | 2006-09-14 | William Radke | Cutting CAM peak power by clock regioning |
US8169808B2 (en) | 2008-01-25 | 2012-05-01 | Micron Technology, Inc. | NAND flash content addressable memory |
US8238173B2 (en) * | 2009-07-16 | 2012-08-07 | Zikbit Ltd | Using storage cells to perform computation |
US9076527B2 (en) | 2009-07-16 | 2015-07-07 | Mikamonu Group Ltd. | Charge sharing in a TCAM array |
US8732560B2 (en) * | 2012-05-08 | 2014-05-20 | Infineon Technologies Ag | Method and device for correction of ternary stored binary data |
US8935590B2 (en) * | 2012-10-31 | 2015-01-13 | Infineon Technologies Ag | Circuitry and method for multi-bit correction |
US9792988B2 (en) | 2014-08-12 | 2017-10-17 | Ciena Corporation | Parallel turbine ternary content addressable memory for high-speed applications |
DE102017110208B4 (de) * | 2017-05-11 | 2019-03-07 | Universität Rostock | Signalverarbeitungsvorrichtung und Messvorrichtung zur hochpräzisen Laufzeitmessung von mindestens dreier Signale |
CN110830169A (zh) * | 2019-11-12 | 2020-02-21 | 深圳市本特利科技有限公司 | 一种电子***检测装置三进制编码方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6045502B2 (ja) | 1979-08-13 | 1985-10-09 | 日本電信電話株式会社 | 半導体連想メモリ回路 |
US4622653A (en) | 1984-10-29 | 1986-11-11 | Texas Instruments Incorporated | Block associative memory |
KR0135699B1 (ko) | 1994-07-11 | 1998-04-24 | 김주용 | 셀프-리프레쉬 가능한 듀얼포트 동적 캠셀 및 리프레쉬장치 |
US5642322A (en) | 1995-05-24 | 1997-06-24 | Kawasaki Steel Corporation | Layout of semiconductor memory and content-addressable memory |
JP3190868B2 (ja) * | 1997-11-21 | 2001-07-23 | エヌイーシーマイクロシステム株式会社 | 連想メモリ装置 |
US6081440A (en) * | 1998-11-05 | 2000-06-27 | Lara Technology, Inc. | Ternary content addressable memory (CAM) having fast insertion and deletion of data values |
US6266262B1 (en) * | 1998-11-05 | 2001-07-24 | Lara Technology, Inc. | Enhanced binary content addressable memory for longest prefix address matching |
US5999435A (en) | 1999-01-15 | 1999-12-07 | Fast-Chip, Inc. | Content addressable memory device |
US6542391B2 (en) * | 2000-06-08 | 2003-04-01 | Netlogic Microsystems, Inc. | Content addressable memory with configurable class-based storage partition |
US6647457B1 (en) * | 1999-11-16 | 2003-11-11 | Cypress Semiconductor Corporation | Content addressable memory having prioritization of unoccupied entries |
US6331961B1 (en) | 2000-06-09 | 2001-12-18 | Silicon Access Networks, Inc. | DRAM based refresh-free ternary CAM |
DE60133999D1 (de) * | 2001-06-22 | 2008-06-26 | Sgs Thomson Microelectronics | Inhaltsadressierbarer Speicher mit AND Gatter Ubereinstimmungssignalkombinationsschaltung |
-
2002
- 2002-07-25 US US10/202,003 patent/US6781856B2/en not_active Expired - Fee Related
- 2002-09-23 AU AU2002335768A patent/AU2002335768A1/en not_active Abandoned
- 2002-09-23 KR KR1020047004292A patent/KR100565456B1/ko not_active IP Right Cessation
- 2002-09-23 CN CNB028233271A patent/CN100440379C/zh not_active Expired - Fee Related
- 2002-09-23 DE DE60217526T patent/DE60217526T2/de not_active Expired - Lifetime
- 2002-09-23 EP EP02770532A patent/EP1433180B1/de not_active Expired - Lifetime
- 2002-09-23 JP JP2003531472A patent/JP3981665B2/ja not_active Expired - Fee Related
- 2002-09-23 WO PCT/US2002/029749 patent/WO2003028034A2/en active IP Right Grant
-
2003
- 2003-10-15 US US10/684,388 patent/US6785153B2/en not_active Expired - Fee Related
-
2007
- 2007-04-26 JP JP2007117545A patent/JP2007265604A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE60217526T2 (de) | 2007-11-08 |
CN1592935A (zh) | 2005-03-09 |
US6785153B2 (en) | 2004-08-31 |
JP2005505089A (ja) | 2005-02-17 |
US20030063485A1 (en) | 2003-04-03 |
KR20040037108A (ko) | 2004-05-04 |
WO2003028034A3 (en) | 2003-10-30 |
US6781856B2 (en) | 2004-08-24 |
JP2007265604A (ja) | 2007-10-11 |
AU2002335768A1 (en) | 2003-04-07 |
US20040081000A1 (en) | 2004-04-29 |
WO2003028034A2 (en) | 2003-04-03 |
KR100565456B1 (ko) | 2006-03-30 |
EP1433180A2 (de) | 2004-06-30 |
EP1433180B1 (de) | 2007-01-10 |
CN100440379C (zh) | 2008-12-03 |
JP3981665B2 (ja) | 2007-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |