DE602008002533D1 - Verfahren zur Herstellung eines Dünnschichttransistors aus einem Oxidhalbleiter - Google Patents
Verfahren zur Herstellung eines Dünnschichttransistors aus einem OxidhalbleiterInfo
- Publication number
- DE602008002533D1 DE602008002533D1 DE200860002533 DE602008002533T DE602008002533D1 DE 602008002533 D1 DE602008002533 D1 DE 602008002533D1 DE 200860002533 DE200860002533 DE 200860002533 DE 602008002533 T DE602008002533 T DE 602008002533T DE 602008002533 D1 DE602008002533 D1 DE 602008002533D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- oxide semiconductor
- film transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070124383A KR101270174B1 (ko) | 2007-12-03 | 2007-12-03 | 산화물 반도체 박막 트랜지스터의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602008002533D1 true DE602008002533D1 (de) | 2010-10-28 |
Family
ID=39620321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200860002533 Active DE602008002533D1 (de) | 2007-12-03 | 2008-06-10 | Verfahren zur Herstellung eines Dünnschichttransistors aus einem Oxidhalbleiter |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7767505B2 (de) |
| EP (1) | EP2068367B1 (de) |
| KR (1) | KR101270174B1 (de) |
| DE (1) | DE602008002533D1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9887276B2 (en) | 2009-07-03 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having oxide semiconductor |
Families Citing this family (95)
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| TWI491048B (zh) * | 2008-07-31 | 2015-07-01 | Semiconductor Energy Lab | 半導體裝置 |
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| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2180518B1 (de) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Herstellungsverfahren für Halbleitervorrichtung |
| US8741702B2 (en) * | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2010047288A1 (en) | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
| KR101667909B1 (ko) * | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| EP2184783B1 (de) | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| JP2010153802A (ja) * | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| US8441007B2 (en) * | 2008-12-25 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP5564331B2 (ja) * | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP2256795B1 (de) * | 2009-05-29 | 2014-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Herstellungsverfahren für Oxidhalbleiterbauelement |
| KR101457837B1 (ko) | 2009-06-30 | 2014-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| EP3573108A1 (de) | 2009-06-30 | 2019-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zur herstellung eines halbleiterbauelements |
| WO2011004723A1 (en) * | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method the same |
| KR102319490B1 (ko) | 2009-07-10 | 2021-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
| WO2011007677A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| KR101269812B1 (ko) | 2009-09-04 | 2013-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 패널, 표시 모듈, 전자 기기 및 표시 장치 |
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| KR101778513B1 (ko) | 2009-10-09 | 2017-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
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| KR101721285B1 (ko) | 2009-10-09 | 2017-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 시프트 레지스터 및 표시 장치 |
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| KR102420689B1 (ko) * | 2010-02-26 | 2022-07-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20190018049A (ko) * | 2010-03-08 | 2019-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
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| KR102549926B1 (ko) | 2015-05-04 | 2023-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기 |
| CN106252359B (zh) * | 2016-08-26 | 2019-06-11 | 武汉华星光电技术有限公司 | 阵列基板及液晶显示面板 |
| CN107978607B (zh) * | 2017-11-21 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | 背沟道蚀刻型氧化物半导体tft基板的制作方法 |
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| DE69531654T2 (de) | 1994-06-15 | 2004-07-29 | Seiko Epson Corp. | Verfahren zur herstellung eines dünnschicht-halbleiter-transistors |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| WO2005088726A1 (ja) | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
| US7265063B2 (en) | 2004-10-22 | 2007-09-04 | Hewlett-Packard Development Company, L.P. | Method of forming a component having dielectric sub-layers |
| JP5118812B2 (ja) | 2004-11-10 | 2013-01-16 | キヤノン株式会社 | 電界効果型トランジスタ |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| JP5099740B2 (ja) | 2005-12-19 | 2012-12-19 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9887276B2 (en) | 2009-07-03 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having oxide semiconductor |
| US10297679B2 (en) | 2009-07-03 | 2019-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090057690A (ko) | 2009-06-08 |
| US7767505B2 (en) | 2010-08-03 |
| EP2068367A1 (de) | 2009-06-10 |
| EP2068367B1 (de) | 2010-09-15 |
| KR101270174B1 (ko) | 2013-05-31 |
| US20090142887A1 (en) | 2009-06-04 |
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