DE602006004890D1 - Beleuchtungsvorrichtung einer fotolithographievorrichtung - Google Patents

Beleuchtungsvorrichtung einer fotolithographievorrichtung

Info

Publication number
DE602006004890D1
DE602006004890D1 DE602006004890T DE602006004890T DE602006004890D1 DE 602006004890 D1 DE602006004890 D1 DE 602006004890D1 DE 602006004890 T DE602006004890 T DE 602006004890T DE 602006004890 T DE602006004890 T DE 602006004890T DE 602006004890 D1 DE602006004890 D1 DE 602006004890D1
Authority
DE
Germany
Prior art keywords
shutter
light beam
plate
photolithography
microlenses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006004890T
Other languages
English (en)
Inventor
Miguel Boutonne
Ythier Renaud Mercier
Francois Riguet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Safran Electronics and Defense SAS
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Sagem Defense Securite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd, Sagem Defense Securite SA filed Critical Shanghai Micro Electronics Equipment Co Ltd
Publication of DE602006004890D1 publication Critical patent/DE602006004890D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Display Devices Of Pinball Game Machines (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
DE602006004890T 2005-09-05 2006-09-05 Beleuchtungsvorrichtung einer fotolithographievorrichtung Active DE602006004890D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0509036A FR2890461B1 (fr) 2005-09-05 2005-09-05 Obturateur et illuminateur d'un dispositif de photolithographie
PCT/EP2006/066032 WO2007028793A1 (fr) 2005-09-05 2006-09-05 Illuminateur d'un dispositif de photolithographie

Publications (1)

Publication Number Publication Date
DE602006004890D1 true DE602006004890D1 (de) 2009-03-05

Family

ID=36501946

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006004890T Active DE602006004890D1 (de) 2005-09-05 2006-09-05 Beleuchtungsvorrichtung einer fotolithographievorrichtung

Country Status (9)

Country Link
US (1) US7982855B2 (de)
EP (1) EP1924889B1 (de)
JP (1) JP5113753B2 (de)
KR (1) KR101274159B1 (de)
CN (1) CN101273304B (de)
AT (1) ATE421114T1 (de)
DE (1) DE602006004890D1 (de)
FR (1) FR2890461B1 (de)
WO (1) WO2007028793A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090233456A1 (en) * 2008-03-17 2009-09-17 Sony Corporation Irradiation optical system, irradiation apparatus and fabrication method for semiconductor device
JP5326928B2 (ja) * 2009-08-19 2013-10-30 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
FR2996016B1 (fr) * 2012-09-25 2014-09-19 Sagem Defense Securite Illuminateur de photolithographie telecentrique selon deux directions
FR2996015B1 (fr) * 2012-09-25 2014-09-12 Sagem Defense Securite Illuminateur de dispositif de photolithographie permettant la diffraction controlee
KR101809343B1 (ko) * 2013-03-13 2017-12-14 칼 짜이스 에스엠테 게엠베하 마이크로리소그래픽 장치
CN103412465B (zh) 2013-07-01 2015-04-15 中国科学院上海光学精密机械研究所 步进扫描投影光刻机的照明***
CN103399463B (zh) 2013-07-19 2015-07-29 中国科学院上海光学精密机械研究所 投影光刻机照明装置和使用方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2848425B2 (ja) * 1992-06-02 1999-01-20 富士通株式会社 光露光方法
JPS58147708A (ja) 1982-02-26 1983-09-02 Nippon Kogaku Kk <Nikon> 照明用光学装置
JPS6247124A (ja) * 1985-08-27 1987-02-28 Canon Inc 露光装置用高速シヤツタ−
JPH01175730A (ja) * 1987-12-29 1989-07-12 Matsushita Electric Ind Co Ltd 露光装置
AT393334B (de) * 1988-01-22 1991-09-25 Ims Ionen Mikrofab Syst Anordnung zur stabilisierung einer bestrahlten maske
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
JP3368654B2 (ja) * 1994-03-23 2003-01-20 株式会社ニコン 照明光学装置及び転写方法
JP3428055B2 (ja) * 1992-11-05 2003-07-22 株式会社ニコン 照明光学装置、露光装置、半導体製造方法および露光方法
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
US5815248A (en) * 1993-04-22 1998-09-29 Nikon Corporation Illumination optical apparatus and method having a wavefront splitter and an optical integrator
US5854671A (en) * 1993-05-28 1998-12-29 Nikon Corporation Scanning exposure method and apparatus therefor and a projection exposure apparatus and method which selectively chooses between static exposure and scanning exposure
JPH07120850A (ja) * 1993-10-26 1995-05-12 Adtec Eng:Kk 露光装置光源用シャッタ装置
JP2723081B2 (ja) * 1995-05-15 1998-03-09 日本電気株式会社 スキャン露光方式における照度むら検出方法
JP2674578B2 (ja) * 1995-08-29 1997-11-12 株式会社ニコン 走査露光装置及び露光方法
JP3286184B2 (ja) * 1996-09-25 2002-05-27 キヤノン株式会社 走査露光装置および方法
JPH10104546A (ja) * 1996-09-27 1998-04-24 Nikon Corp オプティカルインテグレータおよび該オプティカルインテグレータを備えた照明装置
JP2830868B2 (ja) * 1997-01-23 1998-12-02 株式会社ニコン 投影露光装置及び走査露光方法
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
AU4015500A (en) * 1999-03-17 2000-10-04 Rochester Institute Of Technology A projection imaging system with a non-circular aperture and a method thereof
US6219171B1 (en) * 1999-06-03 2001-04-17 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and method for stepper exposure control in photography
AU2001292355A1 (en) * 2000-10-05 2002-04-15 Nikon Corporation Method of determining exposure conditions, exposure method, device producing method and recording medium
WO2002088843A2 (en) * 2001-04-24 2002-11-07 Canon Kabushiki Kaisha Exposure method and apparatus
JP2004037429A (ja) * 2002-07-08 2004-02-05 Nikon Corp シアリング干渉計の校正方法、投影光学系の製造方法、投影光学系、及び投影露光装置
EP1434092A1 (de) * 2002-12-23 2004-06-30 ASML Netherlands B.V. Lithographischer Apparat, Verfahren zur Herstellung eines Artikels und damit erzeugter Artikel

Also Published As

Publication number Publication date
JP2009507387A (ja) 2009-02-19
ATE421114T1 (de) 2009-01-15
WO2007028793A1 (fr) 2007-03-15
US7982855B2 (en) 2011-07-19
US20090257041A1 (en) 2009-10-15
CN101273304A (zh) 2008-09-24
JP5113753B2 (ja) 2013-01-09
CN101273304B (zh) 2011-05-11
FR2890461B1 (fr) 2008-12-26
KR20080071550A (ko) 2008-08-04
KR101274159B1 (ko) 2013-06-13
FR2890461A1 (fr) 2007-03-09
EP1924889A1 (de) 2008-05-28
EP1924889B1 (de) 2009-01-14

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