DE602005024742D1 - Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter - Google Patents

Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter

Info

Publication number
DE602005024742D1
DE602005024742D1 DE602005024742T DE602005024742T DE602005024742D1 DE 602005024742 D1 DE602005024742 D1 DE 602005024742D1 DE 602005024742 T DE602005024742 T DE 602005024742T DE 602005024742 T DE602005024742 T DE 602005024742T DE 602005024742 D1 DE602005024742 D1 DE 602005024742D1
Authority
DE
Germany
Prior art keywords
producing
single crystal
crystal semiconductor
nonpolar
nonpolar single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005024742T
Other languages
English (en)
Inventor
Hyun-Min Shin
Hae-Yong Lee
Changho Lee
Hyun-Suk Kim
Chong-Don Kim
Sun-Hwan Kong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Precision Materials Co Ltd
Original Assignee
Samsung Corning Precision Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Corning Precision Materials Co Ltd filed Critical Samsung Corning Precision Materials Co Ltd
Publication of DE602005024742D1 publication Critical patent/DE602005024742D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/44—Means for preventing access to live contacts
    • H01R13/447—Shutter or cover plate
    • H01R13/453—Shutter or cover plate opened by engagement of counterpart
    • H01R13/4532—Rotating shutter
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE602005024742T 2004-05-07 2005-05-04 Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter Active DE602005024742D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20040032195 2004-05-07

Publications (1)

Publication Number Publication Date
DE602005024742D1 true DE602005024742D1 (de) 2010-12-30

Family

ID=34936166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005024742T Active DE602005024742D1 (de) 2004-05-07 2005-05-04 Verfahren zur Herstellung einer unpolaren einkristtrid-Halbleiter

Country Status (6)

Country Link
US (1) US20050247260A1 (de)
EP (1) EP1593760B1 (de)
JP (1) JP2005320237A (de)
KR (1) KR100718188B1 (de)
CN (1) CN100377306C (de)
DE (1) DE602005024742D1 (de)

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US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
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US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
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CN102146585A (zh) * 2011-01-04 2011-08-10 武汉华炬光电有限公司 非极性面GaN外延片及其制备方法
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Also Published As

Publication number Publication date
KR100718188B1 (ko) 2007-05-15
CN1702836A (zh) 2005-11-30
KR20060045834A (ko) 2006-05-17
CN100377306C (zh) 2008-03-26
EP1593760A1 (de) 2005-11-09
US20050247260A1 (en) 2005-11-10
JP2005320237A (ja) 2005-11-17
EP1593760B1 (de) 2010-11-17

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