DE602004010729D1 - Herstellung von verbesserten Silizium-basierten MEMS-Vorrichtungen - Google Patents

Herstellung von verbesserten Silizium-basierten MEMS-Vorrichtungen

Info

Publication number
DE602004010729D1
DE602004010729D1 DE602004010729T DE602004010729T DE602004010729D1 DE 602004010729 D1 DE602004010729 D1 DE 602004010729D1 DE 602004010729 T DE602004010729 T DE 602004010729T DE 602004010729 T DE602004010729 T DE 602004010729T DE 602004010729 D1 DE602004010729 D1 DE 602004010729D1
Authority
DE
Germany
Prior art keywords
production
mems devices
based mems
improved silicon
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004010729T
Other languages
English (en)
Other versions
DE602004010729T2 (de
Inventor
Luc Ouelett
Robert Antaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne Digital Imaging Inc
Original Assignee
Dalsa Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalsa Semiconductor Inc filed Critical Dalsa Semiconductor Inc
Publication of DE602004010729D1 publication Critical patent/DE602004010729D1/de
Application granted granted Critical
Publication of DE602004010729T2 publication Critical patent/DE602004010729T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0169—Controlling internal stress of deposited layers by post-annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE602004010729T 2003-02-07 2004-02-05 Herstellung von verbesserten Silizium-basierten MEMS-Vorrichtungen Expired - Lifetime DE602004010729T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US44542603P 2003-02-07 2003-02-07
US445426P 2003-02-07
US44701903P 2003-02-13 2003-02-13
US447019P 2003-02-13
US10/410,158 US20040157426A1 (en) 2003-02-07 2003-04-10 Fabrication of advanced silicon-based MEMS devices
US410158 2003-04-10

Publications (2)

Publication Number Publication Date
DE602004010729D1 true DE602004010729D1 (de) 2008-01-31
DE602004010729T2 DE602004010729T2 (de) 2008-12-04

Family

ID=32776968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004010729T Expired - Lifetime DE602004010729T2 (de) 2003-02-07 2004-02-05 Herstellung von verbesserten Silizium-basierten MEMS-Vorrichtungen

Country Status (3)

Country Link
US (2) US20040157426A1 (de)
EP (1) EP1452481B1 (de)
DE (1) DE602004010729T2 (de)

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US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
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US7373026B2 (en) 2004-09-27 2008-05-13 Idc, Llc MEMS device fabricated on a pre-patterned substrate
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US20080048178A1 (en) * 2006-08-24 2008-02-28 Bruce Gardiner Aitken Tin phosphate barrier film, method, and apparatus
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Also Published As

Publication number Publication date
EP1452481B1 (de) 2007-12-19
EP1452481A3 (de) 2005-10-12
US7160752B2 (en) 2007-01-09
US20040157426A1 (en) 2004-08-12
DE602004010729T2 (de) 2008-12-04
US20060166403A1 (en) 2006-07-27
EP1452481A2 (de) 2004-09-01

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