DE60139193D1 - Verfahren und vorrichtung zur messung der schmelzenhöhe - Google Patents
Verfahren und vorrichtung zur messung der schmelzenhöheInfo
- Publication number
- DE60139193D1 DE60139193D1 DE60139193T DE60139193T DE60139193D1 DE 60139193 D1 DE60139193 D1 DE 60139193D1 DE 60139193 T DE60139193 T DE 60139193T DE 60139193 T DE60139193 T DE 60139193T DE 60139193 D1 DE60139193 D1 DE 60139193D1
- Authority
- DE
- Germany
- Prior art keywords
- measuring
- melt height
- melt
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Measurement Of Optical Distance (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000132776 | 2000-05-01 | ||
PCT/JP2001/003761 WO2001083859A1 (fr) | 2000-05-01 | 2001-05-01 | Procede et appareil de mesure du niveau de bain de fusion |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60139193D1 true DE60139193D1 (de) | 2009-08-20 |
Family
ID=18641408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60139193T Expired - Lifetime DE60139193D1 (de) | 2000-05-01 | 2001-05-01 | Verfahren und vorrichtung zur messung der schmelzenhöhe |
Country Status (7)
Country | Link |
---|---|
US (1) | US6994748B2 (de) |
EP (1) | EP1279752B1 (de) |
JP (1) | JP4733900B2 (de) |
KR (1) | KR100720660B1 (de) |
DE (1) | DE60139193D1 (de) |
TW (1) | TW546423B (de) |
WO (1) | WO2001083859A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW546423B (en) | 2000-05-01 | 2003-08-11 | Komatsu Denshi Kinzoku Kk | Method and apparatus for measuring melt level |
JP2006045007A (ja) * | 2004-08-05 | 2006-02-16 | Komatsu Electronic Metals Co Ltd | シリコン単結晶の品質評価方法 |
US7176405B2 (en) * | 2005-04-22 | 2007-02-13 | Ultratech, Inc. | Heat shield for thermal processing |
JP4734139B2 (ja) * | 2006-02-27 | 2011-07-27 | Sumco Techxiv株式会社 | 位置測定方法 |
JP4929817B2 (ja) * | 2006-04-25 | 2012-05-09 | 信越半導体株式会社 | 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置 |
JP4784401B2 (ja) * | 2006-05-30 | 2011-10-05 | 株式会社Sumco | シリコン単結晶の育成プロセスにおける融液の液面位置監視装置 |
JP5194295B2 (ja) * | 2007-08-24 | 2013-05-08 | Sumco Techxiv株式会社 | Cz法による単結晶引き上げ装置内の液面レベル測定方法 |
JP5181178B2 (ja) * | 2007-09-12 | 2013-04-10 | Sumco Techxiv株式会社 | 半導体単結晶製造装置における位置計測装置および位置計測方法 |
TWI396652B (zh) * | 2008-05-23 | 2013-05-21 | Century Display Shenxhen Co | Liquid crystal residual warning system |
US8221545B2 (en) * | 2008-07-31 | 2012-07-17 | Sumco Phoenix Corporation | Procedure for in-situ determination of thermal gradients at the crystal growth front |
JP5577873B2 (ja) | 2010-06-16 | 2014-08-27 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法 |
US9228878B2 (en) * | 2012-03-19 | 2016-01-05 | Advanced Energy Industries, Inc. | Dual beam non-contact displacement sensor |
DE102013002471B4 (de) | 2013-02-13 | 2016-08-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung einer Schmelze in einem Tiegel |
CN104005083B (zh) * | 2014-05-20 | 2016-06-29 | 北京工业大学 | 一种测量单晶炉熔硅液面高度的装置与方法 |
JP6812931B2 (ja) * | 2017-09-06 | 2021-01-13 | 株式会社Sumco | 液面レベル検出装置の調整用治具および調整方法 |
US11101582B2 (en) * | 2018-11-19 | 2021-08-24 | The Boeing Company | Methods and apparatus for installing sleeve on cable using active dimensional analysis |
JP7006636B2 (ja) * | 2019-03-01 | 2022-01-24 | 株式会社Sumco | シリコン単結晶製造装置 |
JP7272249B2 (ja) * | 2019-12-02 | 2023-05-12 | 株式会社Sumco | 単結晶育成方法および単結晶育成装置 |
US11692883B2 (en) | 2020-10-28 | 2023-07-04 | Advanced Energy Industries, Inc. | Fiber optic temperature probe |
CN112903060B (zh) * | 2021-01-29 | 2024-07-12 | 西安奕斯伟材料科技股份有限公司 | 一种监测熔体液面位置的方法、***及计算机存储介质 |
CN114606565B (zh) * | 2022-01-27 | 2023-01-20 | 徐州鑫晶半导体科技有限公司 | 单晶生长装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4508970A (en) * | 1982-07-15 | 1985-04-02 | Motorola, Inc. | Melt level sensing system and method |
DE4123336A1 (de) * | 1991-07-15 | 1993-01-21 | Leybold Ag | Kristallziehverfahren und vorrichtung zu seiner durchfuehrung |
JP2627696B2 (ja) * | 1992-01-17 | 1997-07-09 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置および制御方法 |
JP2627695B2 (ja) | 1992-01-17 | 1997-07-09 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置および制御方法 |
JP2844032B2 (ja) | 1992-02-26 | 1999-01-06 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置 |
JP2816627B2 (ja) * | 1992-04-17 | 1998-10-27 | コマツ電子金属株式会社 | 半導体単結晶製造装置の融液面位置測定・制御装置 |
DE4231162C2 (de) * | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
JP2823035B2 (ja) * | 1993-02-10 | 1998-11-11 | 信越半導体株式会社 | 半導体単結晶の引上装置及び引上方法 |
JP3129571B2 (ja) | 1993-04-28 | 2001-01-31 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置 |
US6071340A (en) * | 1996-02-28 | 2000-06-06 | General Signal Technology Corporation | Apparatus for melt-level detection in Czochralski crystal growth systems |
JPH1171149A (ja) | 1997-08-26 | 1999-03-16 | Kuraray Co Ltd | セメント用添加剤 |
US5882402A (en) * | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
JP4616949B2 (ja) * | 1999-03-17 | 2011-01-19 | Sumco Techxiv株式会社 | メルトレベル検出装置及び検出方法 |
TW546423B (en) | 2000-05-01 | 2003-08-11 | Komatsu Denshi Kinzoku Kk | Method and apparatus for measuring melt level |
-
2001
- 2001-04-30 TW TW090110261A patent/TW546423B/zh not_active IP Right Cessation
- 2001-05-01 US US10/258,984 patent/US6994748B2/en not_active Expired - Lifetime
- 2001-05-01 JP JP2001580463A patent/JP4733900B2/ja not_active Expired - Lifetime
- 2001-05-01 DE DE60139193T patent/DE60139193D1/de not_active Expired - Lifetime
- 2001-05-01 WO PCT/JP2001/003761 patent/WO2001083859A1/ja active Application Filing
- 2001-05-01 KR KR1020027014682A patent/KR100720660B1/ko active IP Right Grant
- 2001-05-01 EP EP01926086A patent/EP1279752B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1279752B1 (de) | 2009-07-08 |
US20030116729A1 (en) | 2003-06-26 |
EP1279752A4 (de) | 2007-05-30 |
KR20030001467A (ko) | 2003-01-06 |
TW546423B (en) | 2003-08-11 |
KR100720660B1 (ko) | 2007-05-21 |
US6994748B2 (en) | 2006-02-07 |
WO2001083859A1 (fr) | 2001-11-08 |
JP4733900B2 (ja) | 2011-07-27 |
EP1279752A1 (de) | 2003-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60109833D1 (de) | Verfahren und Vorrichtung zur Messung des Tintenpegels | |
DE60129691D1 (de) | Verfahren und vorrichtung zur messung der fluoreszenz | |
DE60139193D1 (de) | Verfahren und vorrichtung zur messung der schmelzenhöhe | |
ATA21132000A (de) | Verfahren und vorrichtung zur optoelektronischen entfernungsmessung | |
DE60142289D1 (de) | Verfahren und vorrichtung zur messung von radstellungswerten | |
DE60109209D1 (de) | Verfahren und vorrichtung zur messung des radstandes | |
DE50109562D1 (de) | Vorrichtung und verfahren zur winkelmessung | |
DE50012668D1 (de) | Verfahren und vorrichtung zur fahrweisenbewertung | |
DE10082701D2 (de) | Verfahren und Vorrichtung zur Präzisions-Massenflussmessung | |
DE602004011785D1 (de) | Verfahren und vorrichtung zur messung der reifengleichförmigkeit | |
DE60124647D1 (de) | Vorrichtung und Verfahren zur Abstandsmessung | |
DE60131499D1 (de) | Verfahren und Vorrichtung zur Messung von photoelektrischen Umwandlungscharakteristiken | |
DE60034652D1 (de) | Verfahren und Vorrichtung zur berührungslosen Positionsmessung | |
ATA2672002A (de) | Verfahren und einrichtung zur elektrooptischen distanzmessung | |
DE69729218D1 (de) | Vorrichtung und verfahren zur messung der farbkarakteristik | |
DE60229993D1 (de) | Verfahren und Vorrichtung zur Messung von Ramanverstärkung | |
DE69820601D1 (de) | Verfahren und vorrichtung zur messung und ortung des zahnapex | |
DE10196012T1 (de) | Verfahren und Vorrichtung zur Viskositätsmessung | |
DE69941875D1 (de) | Verfahren und vorrichtung zur messung und überwachung der komplexen permittivität von materialien | |
DE69938992D1 (de) | Vorrichtung und Verfahren zur Messung der Teilchengrössenverteilung | |
DE60028581D1 (de) | Verfahren und gerät zur entfernungsmessung | |
DE50100397D1 (de) | Vorrichtung und Verfahren zur Abstands- und Geschwindigkeitsbestimmung | |
DE60324639D1 (de) | Vorrichtung und Verfahren zur Messung der Wellenlängenänderung in hochauflösenden Messsystemen | |
DE60016639D1 (de) | Verfahren und Vorrichtung zur Pfadsuche | |
DE10084702T1 (de) | Verfahren und Vorrichtung zur Umweltüberwachung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |