DE60138691D1 - Dfb-halbleiterlaserbauelement mit verstärkungs-kopplung und verfahren zu seiner herstellung - Google Patents

Dfb-halbleiterlaserbauelement mit verstärkungs-kopplung und verfahren zu seiner herstellung

Info

Publication number
DE60138691D1
DE60138691D1 DE60138691T DE60138691T DE60138691D1 DE 60138691 D1 DE60138691 D1 DE 60138691D1 DE 60138691 T DE60138691 T DE 60138691T DE 60138691 T DE60138691 T DE 60138691T DE 60138691 D1 DE60138691 D1 DE 60138691D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser component
dfb semiconductor
reinforcement coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138691T
Other languages
English (en)
Inventor
Koji Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60138691D1 publication Critical patent/DE60138691D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3438—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on In(Al)P

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60138691T 2000-03-13 2001-02-07 Dfb-halbleiterlaserbauelement mit verstärkungs-kopplung und verfahren zu seiner herstellung Expired - Lifetime DE60138691D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000068500 2000-03-13
PCT/JP2001/000838 WO2001069735A1 (fr) 2000-03-13 2001-02-07 Dispositif laser a semi-conducteur a retroaction repartie et a couplage de gain et son procede de production

Publications (1)

Publication Number Publication Date
DE60138691D1 true DE60138691D1 (de) 2009-06-25

Family

ID=18587550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138691T Expired - Lifetime DE60138691D1 (de) 2000-03-13 2001-02-07 Dfb-halbleiterlaserbauelement mit verstärkungs-kopplung und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (1) US7016391B2 (de)
EP (1) EP1265326B1 (de)
KR (1) KR100632308B1 (de)
DE (1) DE60138691D1 (de)
WO (1) WO2001069735A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en) * 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
DE10200360B4 (de) * 2002-01-08 2004-01-08 Forschungsverbund Berlin E.V. Verfahren zur Herstellung eines Braggschen Gitters in einer Halbleiterschichtenfolge mittels Ätzen und Halbleiterbauelement
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CA2581614A1 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
JP4951267B2 (ja) * 2006-04-27 2012-06-13 日本オプネクスト株式会社 半導体レーザ素子の製造方法
JP2009302416A (ja) * 2008-06-17 2009-12-24 Anritsu Corp 半導体レーザ，半導体レーザモジュールおよびラマン増幅器
CN103346475B (zh) * 2013-05-31 2015-07-15 中国科学院半导体研究所 单片集成耦合腔窄线宽半导体激光器
JP6491646B2 (ja) 2014-05-07 2019-03-27 日本碍子株式会社 グレーティング素子の実装構造の製造方法
JP6581419B2 (ja) * 2015-07-30 2019-09-25 浜松ホトニクス株式会社 分布帰還型横マルチモード半導体レーザ素子

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102788A (ja) 1983-11-09 1985-06-06 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰環形半導体レ−ザ
JPH088394B2 (ja) 1989-06-30 1996-01-29 三菱電機株式会社 半導体レーザおよびその製造方法
JPH05145169A (ja) * 1990-09-05 1993-06-11 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
JPH0529705A (ja) 1991-07-22 1993-02-05 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体分布帰還型レーザ装置
IT1245541B (it) 1991-05-13 1994-09-29 Cselt Centro Studi Lab Telecom Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione
JP3192693B2 (ja) 1991-08-28 2001-07-30 光計測技術開発株式会社 分布帰還型半導体レーザおよびその製造方法
JPH067624A (ja) 1992-06-26 1994-01-18 Mitsubishi Heavy Ind Ltd 吸着装置
JPH06164051A (ja) * 1992-11-19 1994-06-10 Mitsubishi Electric Corp 利得結合型ｄｆｂレーザおよびその製造方法
JPH0745907A (ja) 1993-07-30 1995-02-14 Mitsubishi Electric Corp 分布帰還型半導体レーザ
US5452318A (en) * 1993-12-16 1995-09-19 Northern Telecom Limited Gain-coupled DFB laser with index coupling compensation
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
JPH088394A (ja) 1994-06-23 1996-01-12 Fuji Electric Co Ltd 高速スイッチングデバイスの主回路構成方法
JPH0837342A (ja) 1994-07-25 1996-02-06 Hitachi Ltd 分布帰還型半導体レーザおよび半導体レーザアレイ
JP4017196B2 (ja) * 1995-03-22 2007-12-05 シャープ株式会社 分布帰還型半導体レーザ装置
US6151347A (en) * 1996-01-17 2000-11-21 Nortel Networks Corporation Laser diode and method of fabrication thereof
EP1143582B1 (de) * 1999-09-29 2003-03-19 The Furukawa Electric Co., Ltd. Verstärkungsgekoppelter halbleiterlaser mit verteilter rückkopplung
US6519270B1 (en) * 1999-09-29 2003-02-11 Bookham Technology Plc Compound cavity reflection modulation laser system
US6574256B1 (en) * 2000-01-18 2003-06-03 Xerox Corporation Distributed feedback laser fabricated by lateral overgrowth of an active region

Also Published As

Publication number Publication date
KR100632308B1 (ko) 2006-10-11
US7016391B2 (en) 2006-03-21
US20030039287A1 (en) 2003-02-27
EP1265326A1 (de) 2002-12-11
EP1265326A4 (de) 2005-12-07
EP1265326B1 (de) 2009-05-13
WO2001069735A1 (fr) 2001-09-20
KR20020081450A (ko) 2002-10-26

Similar Documents

Publication Publication Date Title
ATA10852001A (de) Bauelement und verfahren zu seiner herstellung
DE60144235D1 (de) Zusammengesetzter film mit mehreren komponenten und verfahren zu seiner herstellung
DE50103010D1 (de) Induktives bauelement und verfahren zu seiner herstellung
DE50214717D1 (de) Und verfahren zu seiner herstellung
DE60233058D1 (de) Silsesquioxanderivate und verfahren zu ihrer herstellung
DE60115902D1 (de) Osteoimplantat und verfahren zu seiner herstellung
DE50213224D1 (de) Induktives bauelement und verfahren zu seiner herstellung
AT501583B8 (de) Dualband-antenne und verfahren zu ihrer herstellung
DE60231548D1 (de) N; formkörper und verfahren zu ihrer herstellung
DE60027698D1 (de) Lasttragendes osteoimplantat und verfahren zu seiner herstellung
DE60238123D1 (de) Organische halbleiterschicht und verfahren zu ihrer herstellung
DE60141211D1 (de) Polysilizium-halbleiterbauteil und verfahren zu dessen herstellung
DE60031949D1 (de) Leiterplatte und verfahren zu ihrer herstellung
DE69941879D1 (de) Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
DE60132554D1 (de) STATORBLECHKöRPER UND VERFAHREN ZUR HERSTELLUNG DESSELBEN
DE60127239D1 (de) Verbundstoff mit feuerverzögernden eigenschaften und verfahren zu seiner herstellung
DE60116486D1 (de) Gallengangstent und verfahren zu seiner herstellung
DE60208523D1 (de) Spulenbauteil und verfahren zu seiner herstellung
DE60138691D1 (de) Dfb-halbleiterlaserbauelement mit verstärkungs-kopplung und verfahren zu seiner herstellung
DE60111904D1 (de) Biosensor und verfahren zu dessen herstellung
DE60234678D1 (de) Leiterplatte und verfahren zu ihrer herstellung
DE50107925D1 (de) Hochvolt-diode und verfahren zu deren herstellung
DE60233478D1 (de) Gruppe iii nitrid-basiertes lichtemittierendes halbleiterbauelement und verfahren zu dessen herstellung
DE60238703D1 (de) Photokatalysator und verfahren zu seiner herstellung
DE60105634D1 (de) Flexibler schlauch mit anschlussflansch und verfahren zu seiner herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition