DE60118308D1 - Methode zur Korrektur optischer Naheffekte - Google Patents
Methode zur Korrektur optischer NaheffekteInfo
- Publication number
- DE60118308D1 DE60118308D1 DE60118308T DE60118308T DE60118308D1 DE 60118308 D1 DE60118308 D1 DE 60118308D1 DE 60118308 T DE60118308 T DE 60118308T DE 60118308 T DE60118308 T DE 60118308T DE 60118308 D1 DE60118308 D1 DE 60118308D1
- Authority
- DE
- Germany
- Prior art keywords
- optical proximity
- correcting optical
- proximity effects
- effects
- correcting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0025247A GB2367907A (en) | 2000-10-13 | 2000-10-13 | Optical proximity correction |
GB0025247 | 2000-10-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60118308D1 true DE60118308D1 (de) | 2006-05-18 |
DE60118308T2 DE60118308T2 (de) | 2006-12-07 |
Family
ID=9901316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60118308T Expired - Fee Related DE60118308T2 (de) | 2000-10-13 | 2001-09-12 | Methode zur Korrektur optischer Naheffekte |
Country Status (4)
Country | Link |
---|---|
US (1) | US6686100B2 (de) |
EP (1) | EP1197802B1 (de) |
DE (1) | DE60118308T2 (de) |
GB (1) | GB2367907A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7318214B1 (en) | 2003-06-19 | 2008-01-08 | Invarium, Inc. | System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections |
US7355673B2 (en) * | 2003-06-30 | 2008-04-08 | Asml Masktools B.V. | Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout |
US7266800B2 (en) * | 2004-06-04 | 2007-09-04 | Invarium, Inc. | Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes |
US7588868B2 (en) * | 2004-10-06 | 2009-09-15 | Cadence Design Systems, Inc. | Method and system for reducing the impact of across-wafer variations on critical dimension measurements |
WO2008078213A1 (en) * | 2006-12-21 | 2008-07-03 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
KR100881518B1 (ko) | 2007-10-11 | 2009-02-05 | 주식회사 동부하이텍 | 반도체 소자의 opc 모델링 방법 및 그 구조 |
CN103631083B (zh) * | 2012-08-20 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 一种光学邻近修正的焦平面选择方法 |
CN113391516B (zh) * | 2020-03-13 | 2022-03-04 | 长鑫存储技术有限公司 | 一种光学临近效应修正方法、装置、设备及介质 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5657235A (en) * | 1995-05-03 | 1997-08-12 | International Business Machines Corporation | Continuous scale optical proximity correction by mask maker dose modulation |
US5862058A (en) * | 1996-05-16 | 1999-01-19 | International Business Machines Corporation | Optical proximity correction method and system |
-
2000
- 2000-10-13 GB GB0025247A patent/GB2367907A/en not_active Withdrawn
-
2001
- 2001-09-12 DE DE60118308T patent/DE60118308T2/de not_active Expired - Fee Related
- 2001-09-12 EP EP01307745A patent/EP1197802B1/de not_active Expired - Lifetime
- 2001-10-12 US US09/976,940 patent/US6686100B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1197802B1 (de) | 2006-03-29 |
GB0025247D0 (en) | 2000-11-29 |
DE60118308T2 (de) | 2006-12-07 |
US6686100B2 (en) | 2004-02-03 |
US20020102474A1 (en) | 2002-08-01 |
EP1197802A2 (de) | 2002-04-17 |
EP1197802A3 (de) | 2004-03-17 |
GB2367907A (en) | 2002-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: X-FAB SEMICONDUCTOR FOUNDRIES AG, 99097 ERFURT, DE |
|
8339 | Ceased/non-payment of the annual fee |