DE60043854D1 - Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten - Google Patents

Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten

Info

Publication number
DE60043854D1
DE60043854D1 DE60043854T DE60043854T DE60043854D1 DE 60043854 D1 DE60043854 D1 DE 60043854D1 DE 60043854 T DE60043854 T DE 60043854T DE 60043854 T DE60043854 T DE 60043854T DE 60043854 D1 DE60043854 D1 DE 60043854D1
Authority
DE
Germany
Prior art keywords
mask
gallium nitride
substrate
layer
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043854T
Other languages
English (en)
Inventor
Hua-Shuang Kong
John Adam Edmond
Kevin Ward Haberern
David Todd Emerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60043854D1 publication Critical patent/DE60043854D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Saccharide Compounds (AREA)
  • Led Devices (AREA)
DE60043854T 1999-10-14 2000-10-11 Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten Expired - Lifetime DE60043854D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15929999P 1999-10-14 1999-10-14
PCT/US2000/028056 WO2001027980A1 (en) 1999-10-14 2000-10-11 Single step pendeo- and lateral epitaxial overgrowth of group iii-nitride layers

Publications (1)

Publication Number Publication Date
DE60043854D1 true DE60043854D1 (de) 2010-04-01

Family

ID=22571960

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043854T Expired - Lifetime DE60043854D1 (de) 1999-10-14 2000-10-11 Einstufige pendeo- oder laterale epitaxie von gruppe iii-nitridschichten

Country Status (13)

Country Link
EP (1) EP1222685B1 (de)
JP (1) JP4947867B2 (de)
KR (1) KR100751959B1 (de)
CN (1) CN1183577C (de)
AT (1) ATE458268T1 (de)
AU (1) AU8009500A (de)
CA (1) CA2386329A1 (de)
DE (1) DE60043854D1 (de)
HK (1) HK1045760A1 (de)
MX (1) MXPA02003749A (de)
MY (5) MY142266A (de)
TW (1) TW488082B (de)
WO (1) WO2001027980A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004007009A (ja) * 1999-11-15 2004-01-08 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
EP2276059A1 (de) 2000-08-04 2011-01-19 The Regents of the University of California Verfahren zur Stresskontrolle in auf Substraten abgeschiedenen Galliumnitridfilmen
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
KR100425680B1 (ko) * 2001-07-12 2004-04-03 엘지전자 주식회사 질화물 반도체 박막 형성방법
JP4784012B2 (ja) * 2001-07-27 2011-09-28 日亜化学工業株式会社 窒化物半導体基板、及びその製造方法
DE10142656A1 (de) * 2001-08-31 2003-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterschichten auf III-V-Nitridhalbleiter-Basis
KR100437775B1 (ko) * 2001-10-11 2004-06-30 엘지전자 주식회사 질화물 반도체 기판 제조방법
DE10252060B4 (de) * 2002-11-08 2006-10-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung einer Vielzahl von Halbleiterschichten
KR20050077902A (ko) * 2004-01-29 2005-08-04 엘지전자 주식회사 질화물 반도체 박막의 성장 방법
CN100433261C (zh) * 2005-03-18 2008-11-12 夏普株式会社 氮化物半导体器件制造方法
TW200703463A (en) 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
JP4772565B2 (ja) * 2006-04-03 2011-09-14 三菱電機株式会社 半導体装置の製造方法
TW200828624A (en) * 2006-12-27 2008-07-01 Epistar Corp Light-emitting diode and method for manufacturing the same
KR100901822B1 (ko) * 2007-09-11 2009-06-09 주식회사 실트론 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법
US8680581B2 (en) 2008-12-26 2014-03-25 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor and template substrate
KR101810609B1 (ko) * 2011-02-14 2017-12-20 삼성전자주식회사 반도체 소자 및 그 제조방법
CN102169287B (zh) * 2011-05-31 2012-08-22 北京大学 一种光刻掩膜版及其制备方法
KR20130035024A (ko) 2011-09-29 2013-04-08 삼성전자주식회사 고 전자 이동도 트랜지스터 및 그 제조방법
WO2013154485A1 (en) * 2012-04-13 2013-10-17 Sun Yanting A method for manufacturing a semiconductor method device based on epitaxial growth.
WO2014126055A1 (ja) * 2013-02-15 2014-08-21 国立大学法人東京大学 半導体集積回路基板およびその製造方法
US20150059640A1 (en) * 2013-08-27 2015-03-05 Raytheon Company Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows
CN106910805B (zh) * 2017-03-31 2019-05-03 西安电子科技大学 基于m面LiAlO2衬底的m面Ⅲ族氮化物的发光二极管
CN107146831B (zh) * 2017-03-31 2019-05-07 西安电子科技大学 基于r面Al2O3衬底的a面Ⅲ族氮化物的发光二极管
US20220123166A1 (en) * 2019-01-16 2022-04-21 The Regents Of The University Of California Method for removal of devices using a trench

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971928A (en) * 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
JP3139445B2 (ja) * 1997-03-13 2001-02-26 日本電気株式会社 ＧａＮ系半導体の成長方法およびＧａＮ系半導体膜
JPH11135832A (ja) * 1997-10-26 1999-05-21 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体及びその製造方法
WO1999023693A1 (en) * 1997-10-30 1999-05-14 Sumitomo Electric Industries, Ltd. GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
JPH11145515A (ja) * 1997-11-10 1999-05-28 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP3620269B2 (ja) * 1998-02-27 2005-02-16 豊田合成株式会社 ＧａＮ系半導体素子の製造方法
JP3988245B2 (ja) * 1998-03-12 2007-10-10 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置の製造方法

Also Published As

Publication number Publication date
HK1045760A1 (zh) 2002-12-06
JP4947867B2 (ja) 2012-06-06
KR100751959B1 (ko) 2007-09-03
CN1378702A (zh) 2002-11-06
MY142266A (en) 2010-11-15
CN1183577C (zh) 2005-01-05
AU8009500A (en) 2001-04-23
WO2001027980A1 (en) 2001-04-19
KR20020047225A (ko) 2002-06-21
MXPA02003749A (es) 2002-08-30
WO2001027980A9 (en) 2002-09-26
MY142276A (en) 2010-11-15
MY142275A (en) 2010-11-15
TW488082B (en) 2002-05-21
JP2003511871A (ja) 2003-03-25
EP1222685B1 (de) 2010-02-17
EP1222685A1 (de) 2002-07-17
CA2386329A1 (en) 2001-04-19
MY145233A (en) 2012-01-13
MY125503A (en) 2006-08-30
ATE458268T1 (de) 2010-03-15

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