DE60041902D1 - Feldeffekttransistor und integrierte Schaltungsanordnung mit demselben - Google Patents
Feldeffekttransistor und integrierte Schaltungsanordnung mit demselbenInfo
- Publication number
- DE60041902D1 DE60041902D1 DE60041902T DE60041902T DE60041902D1 DE 60041902 D1 DE60041902 D1 DE 60041902D1 DE 60041902 T DE60041902 T DE 60041902T DE 60041902 T DE60041902 T DE 60041902T DE 60041902 D1 DE60041902 D1 DE 60041902D1
- Authority
- DE
- Germany
- Prior art keywords
- same
- integrated circuit
- field effect
- effect transistor
- circuit arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29054399 | 1999-10-13 | ||
JP36775399A JP4666708B2 (ja) | 1999-10-13 | 1999-12-24 | 電界効果トランジスタ |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60041902D1 true DE60041902D1 (de) | 2009-05-14 |
Family
ID=26558109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60041902T Expired - Fee Related DE60041902D1 (de) | 1999-10-13 | 2000-04-05 | Feldeffekttransistor und integrierte Schaltungsanordnung mit demselben |
Country Status (4)
Country | Link |
---|---|
US (1) | US6459128B1 (de) |
EP (1) | EP1093168B1 (de) |
JP (1) | JP4666708B2 (de) |
DE (1) | DE60041902D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6683344B2 (en) * | 2001-09-07 | 2004-01-27 | Ixys Corporation | Rugged and fast power MOSFET and IGBT |
JP4082295B2 (ja) * | 2003-07-11 | 2008-04-30 | トヨタ自動車株式会社 | 半導体装置 |
US8604560B2 (en) | 2008-11-27 | 2013-12-10 | Freescale Semiconductor, Inc. | Power MOS transistor device |
WO2010061244A1 (en) * | 2008-11-27 | 2010-06-03 | Freescale Semiconductor, Inc. | Power mos transistor device and switch apparatus comprising the same |
CN103972309B (zh) * | 2014-05-27 | 2016-06-29 | 中利腾晖光伏科技有限公司 | 一种太阳能电池电极及太阳能电池 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4974059A (en) | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
JPS6010677A (ja) | 1983-06-30 | 1985-01-19 | Nissan Motor Co Ltd | 縦型mosトランジスタ |
JPS6180859A (ja) | 1984-09-28 | 1986-04-24 | Hitachi Ltd | パワ−mosfet |
US4833513A (en) | 1985-01-20 | 1989-05-23 | Tdk Corporation | MOS FET semiconductor device having a cell pattern arrangement for optimizing channel width |
JPS61290768A (ja) | 1985-06-19 | 1986-12-20 | Tdk Corp | 縦形半導体装置およびその製造方法 |
JP2500807B2 (ja) * | 1988-03-04 | 1996-05-29 | 日産自動車株式会社 | 縦型パワ―mosトランジスタ |
US5686750A (en) * | 1991-09-27 | 1997-11-11 | Koshiba & Partners | Power semiconductor device having improved reverse recovery voltage |
JP3156300B2 (ja) * | 1991-10-07 | 2001-04-16 | 株式会社デンソー | 縦型半導体装置 |
JP3016298B2 (ja) * | 1992-02-26 | 2000-03-06 | 日本電気株式会社 | 半導体装置 |
US5399892A (en) | 1993-11-29 | 1995-03-21 | Harris Corporation | Mesh geometry for MOS-gated semiconductor devices |
US5703389A (en) | 1995-02-24 | 1997-12-30 | Motorola, Inc. | Vertical IGFET configuration having low on-resistance and method |
JP3219045B2 (ja) * | 1998-02-20 | 2001-10-15 | 日本電気株式会社 | 縦型misfetの製造方法 |
-
1999
- 1999-12-24 JP JP36775399A patent/JP4666708B2/ja not_active Expired - Fee Related
-
2000
- 2000-03-08 US US09/521,666 patent/US6459128B1/en not_active Expired - Fee Related
- 2000-04-05 DE DE60041902T patent/DE60041902D1/de not_active Expired - Fee Related
- 2000-04-05 EP EP00107408A patent/EP1093168B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4666708B2 (ja) | 2011-04-06 |
US6459128B1 (en) | 2002-10-01 |
EP1093168A3 (de) | 2001-10-10 |
EP1093168B1 (de) | 2009-04-01 |
JP2001185725A (ja) | 2001-07-06 |
EP1093168A2 (de) | 2001-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |