DE60038921D1 - Oberflächenstabilisierungsverfahren für Halbleiterverbindungen - Google Patents

Oberflächenstabilisierungsverfahren für Halbleiterverbindungen

Info

Publication number
DE60038921D1
DE60038921D1 DE60038921T DE60038921T DE60038921D1 DE 60038921 D1 DE60038921 D1 DE 60038921D1 DE 60038921 T DE60038921 T DE 60038921T DE 60038921 T DE60038921 T DE 60038921T DE 60038921 D1 DE60038921 D1 DE 60038921D1
Authority
DE
Germany
Prior art keywords
stabilization process
semiconductor compounds
surface stabilization
compounds
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60038921T
Other languages
English (en)
Inventor
Masanori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60038921D1 publication Critical patent/DE60038921D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60038921T 1999-05-31 2000-05-30 Oberflächenstabilisierungsverfahren für Halbleiterverbindungen Expired - Fee Related DE60038921D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15125999 1999-05-31
JP2000094340A JP3778769B2 (ja) 1999-05-31 2000-03-30 化合物半導体表面の安定化方法、それを用いた半導体レーザ素子の製造方法、および半導体レーザ素子等の半導体素子

Publications (1)

Publication Number Publication Date
DE60038921D1 true DE60038921D1 (de) 2008-07-03

Family

ID=26480562

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038921T Expired - Fee Related DE60038921D1 (de) 1999-05-31 2000-05-30 Oberflächenstabilisierungsverfahren für Halbleiterverbindungen

Country Status (4)

Country Link
US (1) US6674095B1 (de)
EP (1) EP1058359B1 (de)
JP (1) JP3778769B2 (de)
DE (1) DE60038921D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1866955A4 (de) * 2005-03-25 2011-02-02 Trumpf Photonics Inc Laserfacettenpassivierung
US7951694B2 (en) * 2008-08-28 2011-05-31 Sharp Kabushiki Kaisha Semiconductor structure and method of manufacture of same
JP2012109499A (ja) * 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
US9929305B2 (en) 2015-04-28 2018-03-27 International Business Machines Corporation Surface treatment for photovoltaic device
EP3464649A1 (de) * 2016-06-02 2019-04-10 Nestec S.A. Co-kristalline saccharose
CN108683074B (zh) * 2018-03-29 2022-12-02 深圳瑞波光电子有限公司 一种半导体激光器件及其谐振腔面钝化膜、制作方法
CN108521072B (zh) * 2018-03-29 2022-12-02 深圳瑞波光电子有限公司 半导体激光器件的谐振腔面钝化膜、制作方法及器件

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513057A (en) * 1982-06-10 1985-04-23 Hughes Aircraft Company Process for forming sulfide layers
US5366934A (en) * 1987-06-15 1994-11-22 Rockwell International Corporation Method for sulfide surface passivation
JP2659830B2 (ja) * 1989-11-06 1997-09-30 シャープ株式会社 半導体レーザ素子及びその製造方法
JP3129973B2 (ja) 1989-02-03 2001-01-31 シャープ株式会社 半導体レーザ装置
JPH04345079A (ja) 1991-05-22 1992-12-01 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびその製造方法
JPH07176819A (ja) * 1992-03-23 1995-07-14 Matsushita Electron Corp 半導体レーザ装置の製造方法
US5474939A (en) * 1992-12-30 1995-12-12 Siemens Solar Industries International Method of making thin film heterojunction solar cell
US5799028A (en) * 1996-07-18 1998-08-25 Sdl, Inc. Passivation and protection of a semiconductor surface
US6087704A (en) * 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
US6228672B1 (en) * 1998-10-29 2001-05-08 Sandia Corporation Stable surface passivation process for compound semiconductors

Also Published As

Publication number Publication date
US6674095B1 (en) 2004-01-06
EP1058359A1 (de) 2000-12-06
JP3778769B2 (ja) 2006-05-24
EP1058359B1 (de) 2008-05-21
JP2001053374A (ja) 2001-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee