DE60038921D1 - Oberflächenstabilisierungsverfahren für Halbleiterverbindungen - Google Patents
Oberflächenstabilisierungsverfahren für HalbleiterverbindungenInfo
- Publication number
- DE60038921D1 DE60038921D1 DE60038921T DE60038921T DE60038921D1 DE 60038921 D1 DE60038921 D1 DE 60038921D1 DE 60038921 T DE60038921 T DE 60038921T DE 60038921 T DE60038921 T DE 60038921T DE 60038921 D1 DE60038921 D1 DE 60038921D1
- Authority
- DE
- Germany
- Prior art keywords
- stabilization process
- semiconductor compounds
- surface stabilization
- compounds
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15125999 | 1999-05-31 | ||
JP2000094340A JP3778769B2 (ja) | 1999-05-31 | 2000-03-30 | 化合物半導体表面の安定化方法、それを用いた半導体レーザ素子の製造方法、および半導体レーザ素子等の半導体素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60038921D1 true DE60038921D1 (de) | 2008-07-03 |
Family
ID=26480562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60038921T Expired - Fee Related DE60038921D1 (de) | 1999-05-31 | 2000-05-30 | Oberflächenstabilisierungsverfahren für Halbleiterverbindungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6674095B1 (de) |
EP (1) | EP1058359B1 (de) |
JP (1) | JP3778769B2 (de) |
DE (1) | DE60038921D1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1866955A4 (de) * | 2005-03-25 | 2011-02-02 | Trumpf Photonics Inc | Laserfacettenpassivierung |
US7951694B2 (en) * | 2008-08-28 | 2011-05-31 | Sharp Kabushiki Kaisha | Semiconductor structure and method of manufacture of same |
JP2012109499A (ja) * | 2010-11-19 | 2012-06-07 | Sony Corp | 半導体レーザ素子およびその製造方法 |
US9929305B2 (en) | 2015-04-28 | 2018-03-27 | International Business Machines Corporation | Surface treatment for photovoltaic device |
EP3464649A1 (de) * | 2016-06-02 | 2019-04-10 | Nestec S.A. | Co-kristalline saccharose |
CN108683074B (zh) * | 2018-03-29 | 2022-12-02 | 深圳瑞波光电子有限公司 | 一种半导体激光器件及其谐振腔面钝化膜、制作方法 |
CN108521072B (zh) * | 2018-03-29 | 2022-12-02 | 深圳瑞波光电子有限公司 | 半导体激光器件的谐振腔面钝化膜、制作方法及器件 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513057A (en) * | 1982-06-10 | 1985-04-23 | Hughes Aircraft Company | Process for forming sulfide layers |
US5366934A (en) * | 1987-06-15 | 1994-11-22 | Rockwell International Corporation | Method for sulfide surface passivation |
JP2659830B2 (ja) * | 1989-11-06 | 1997-09-30 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP3129973B2 (ja) | 1989-02-03 | 2001-01-31 | シャープ株式会社 | 半導体レーザ装置 |
JPH04345079A (ja) | 1991-05-22 | 1992-12-01 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法 |
JPH07176819A (ja) * | 1992-03-23 | 1995-07-14 | Matsushita Electron Corp | 半導体レーザ装置の製造方法 |
US5474939A (en) * | 1992-12-30 | 1995-12-12 | Siemens Solar Industries International | Method of making thin film heterojunction solar cell |
US5799028A (en) * | 1996-07-18 | 1998-08-25 | Sdl, Inc. | Passivation and protection of a semiconductor surface |
US6087704A (en) * | 1997-09-30 | 2000-07-11 | National Science Council | Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer |
US6228672B1 (en) * | 1998-10-29 | 2001-05-08 | Sandia Corporation | Stable surface passivation process for compound semiconductors |
-
2000
- 2000-03-30 JP JP2000094340A patent/JP3778769B2/ja not_active Expired - Fee Related
- 2000-05-30 EP EP00111586A patent/EP1058359B1/de not_active Expired - Lifetime
- 2000-05-30 DE DE60038921T patent/DE60038921D1/de not_active Expired - Fee Related
- 2000-05-31 US US09/584,380 patent/US6674095B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6674095B1 (en) | 2004-01-06 |
EP1058359A1 (de) | 2000-12-06 |
JP3778769B2 (ja) | 2006-05-24 |
EP1058359B1 (de) | 2008-05-21 |
JP2001053374A (ja) | 2001-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |