DE60036463D1 - Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht - Google Patents
Bestimmung der Substrattemperatur durch Messung der Dicke einer KupferoxidschichtInfo
- Publication number
- DE60036463D1 DE60036463D1 DE60036463T DE60036463T DE60036463D1 DE 60036463 D1 DE60036463 D1 DE 60036463D1 DE 60036463 T DE60036463 T DE 60036463T DE 60036463 T DE60036463 T DE 60036463T DE 60036463 D1 DE60036463 D1 DE 60036463D1
- Authority
- DE
- Germany
- Prior art keywords
- determination
- measuring
- thickness
- oxide layer
- substrate temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 title 1
- 239000005751 Copper oxide Substances 0.000 title 1
- 229910000431 copper oxide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K15/00—Testing or calibrating of thermometers
- G01K15/005—Calibration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/270,475 US6200023B1 (en) | 1999-03-15 | 1999-03-15 | Method for determining the temperature in a thermal processing chamber |
PCT/IB2000/000264 WO2000055587A1 (en) | 1999-03-15 | 2000-03-10 | Method for determining the temperature in a thermal processing chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60036463D1 true DE60036463D1 (de) | 2007-10-31 |
Family
ID=23031466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60036463T Expired - Lifetime DE60036463D1 (de) | 1999-03-15 | 2000-03-10 | Bestimmung der Substrattemperatur durch Messung der Dicke einer Kupferoxidschicht |
Country Status (6)
Country | Link |
---|---|
US (1) | US6200023B1 (de) |
EP (1) | EP1163499B1 (de) |
JP (1) | JP2002539622A (de) |
KR (1) | KR20020000773A (de) |
DE (1) | DE60036463D1 (de) |
WO (1) | WO2000055587A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985356A (en) * | 1994-10-18 | 1999-11-16 | The Regents Of The University Of California | Combinatorial synthesis of novel materials |
TW403835B (en) * | 1998-07-28 | 2000-09-01 | Steag Rtp Systems Gmbh | The method of temperature measurement used in calibration regardless of the emitting rate and the apparatus thereof |
KR100634642B1 (ko) * | 1998-11-20 | 2006-10-16 | 스티그 알티피 시스템즈, 인코포레이티드 | 반도체 웨이퍼의 급속 가열 및 냉각 장치 |
US6580140B1 (en) * | 2000-09-18 | 2003-06-17 | International Business Machines Corporation | Metal oxide temperature monitor |
US6666577B2 (en) * | 2000-11-02 | 2003-12-23 | Matsushita Electric Industrial Co., Ltd. | Method for predicting temperature, test wafer for use in temperature prediction, and method for evaluating lamp heating system |
US6616331B2 (en) * | 2000-11-02 | 2003-09-09 | Matsushita Electric Industrial Co., Ltd | Method for predicting temperature and test wafer for use in temperature prediction |
US6970644B2 (en) * | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US7015422B2 (en) * | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
JP4041797B2 (ja) | 2001-06-28 | 2008-01-30 | ポラック ラボラトリーズ インコーポレイテッド | 内蔵型センサ装置 |
US6536943B1 (en) * | 2001-10-17 | 2003-03-25 | Albemarle Corporation | Method and apparatus for testing flammability properties of cellular plastics |
US6918312B2 (en) * | 2002-05-30 | 2005-07-19 | Kendro Laboratory Products Lp | Validation device and method |
US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US7101812B2 (en) * | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US6835914B2 (en) * | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
US7078247B2 (en) * | 2003-06-06 | 2006-07-18 | International Business Machines Corporation | Early detection of contact liner integrity by chemical reaction |
US7654596B2 (en) * | 2003-06-27 | 2010-02-02 | Mattson Technology, Inc. | Endeffectors for handling semiconductor wafers |
JP2005174986A (ja) * | 2003-12-08 | 2005-06-30 | Matsushita Electric Ind Co Ltd | 急速熱処理装置、その製造方法及び温度調整方法 |
US7455448B2 (en) * | 2004-07-26 | 2008-11-25 | Texas Instruments Incorporated | Rapid thermal anneal equipment and method using sichrome film |
FR2879216B1 (fr) * | 2004-12-13 | 2007-04-20 | D M S Sa | Procede de recuit d'une bande d'acier inoxydable |
US7275861B2 (en) * | 2005-01-31 | 2007-10-02 | Veeco Instruments Inc. | Calibration wafer and method of calibrating in situ temperatures |
EP1734571B1 (de) * | 2005-06-10 | 2008-08-20 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Kalibrierverfahren für Apparaturen zur thermischen Behandlung |
WO2007005489A2 (en) * | 2005-07-05 | 2007-01-11 | Mattson Technology, Inc. | Method and system for determining optical properties of semiconductor wafers |
US8206996B2 (en) * | 2006-03-28 | 2012-06-26 | Lam Research Corporation | Etch tool process indicator method and apparatus |
US7951616B2 (en) * | 2006-03-28 | 2011-05-31 | Lam Research Corporation | Process for wafer temperature verification in etch tools |
US7543981B2 (en) * | 2006-06-29 | 2009-06-09 | Mattson Technology, Inc. | Methods for determining wafer temperature |
JP5223681B2 (ja) * | 2006-12-28 | 2013-06-26 | 住友電気工業株式会社 | 流動体の物理量測定方法及び制御方法 |
JP4916326B2 (ja) * | 2007-01-31 | 2012-04-11 | 東京エレクトロン株式会社 | 温度モニタ用基板の検査装置及び検査方法 |
US20080267257A1 (en) * | 2007-04-27 | 2008-10-30 | Sokudo Co., Ltd. | Method and System for Detecting Substrate Temperature in a Track Lithography Tool |
JP5304647B2 (ja) | 2007-06-28 | 2013-10-02 | 富士通セミコンダクター株式会社 | 熱処理装置、及び半導体装置の製造方法 |
US7976216B2 (en) * | 2007-12-20 | 2011-07-12 | Mattson Technology, Inc. | Determining the temperature of silicon at high temperatures |
KR101036900B1 (ko) * | 2009-07-06 | 2011-05-25 | (주)한미글로벌건축사사무소 | 마그네틱 브라켓의 설치구조 |
TWI585880B (zh) * | 2011-11-10 | 2017-06-01 | 應用材料股份有限公司 | 透過雷射繞射測量3d半導體結構之溫度的設備及方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3803336C2 (de) | 1988-02-04 | 1995-08-03 | Siemens Ag | Verfahren zur Temperaturkontrolle von Temperprozessen in der Halbleitertechnik |
US5103182A (en) | 1990-04-02 | 1992-04-07 | Texas Instruments Incorporated | Electromagnetic wave measurement of conductive layers of a semiconductor wafer during processing in a fabrication chamber |
US5265957A (en) * | 1992-08-11 | 1993-11-30 | Texas Instruments Incorporated | Wireless temperature calibration device and method |
US5364187A (en) | 1993-03-08 | 1994-11-15 | Micron Semiconductor, Inc. | System for repeatable temperature measurement using surface reflectivity |
US5994676A (en) * | 1996-01-31 | 1999-11-30 | Sgs-Thomson Microelectronics S.A. | Method for calibrating the temperature of an epitaxy reactor |
US6126744A (en) * | 1996-11-18 | 2000-10-03 | Asm America, Inc. | Method and system for adjusting semiconductor processing equipment |
WO1998057146A1 (fr) * | 1997-06-11 | 1998-12-17 | Matsushita Electronics Corporation | Procede d'evaluation de couche semi-conductrice, procede de fabrication de dispositif semi-conducteur, et support d'enregistrement |
US5841110A (en) * | 1997-08-27 | 1998-11-24 | Steag-Ast Gmbh | Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems |
JPH11251563A (ja) * | 1997-12-26 | 1999-09-17 | Canon Inc | Soi基板の熱処理方法及び熱処理装置並びにそれを用いたsoi基板の作製方法 |
JP3272706B2 (ja) * | 1998-12-09 | 2002-04-08 | 松下電器産業株式会社 | 温度測定用サンプルの作成方法 |
US6403923B1 (en) * | 1999-09-03 | 2002-06-11 | Mattson Technology, Inc. | System for controlling the temperature of a reflective substrate during rapid heating |
-
1999
- 1999-03-15 US US09/270,475 patent/US6200023B1/en not_active Expired - Fee Related
-
2000
- 2000-03-10 JP JP2000605171A patent/JP2002539622A/ja not_active Withdrawn
- 2000-03-10 DE DE60036463T patent/DE60036463D1/de not_active Expired - Lifetime
- 2000-03-10 EP EP00906563A patent/EP1163499B1/de not_active Expired - Lifetime
- 2000-03-10 WO PCT/IB2000/000264 patent/WO2000055587A1/en active IP Right Grant
- 2000-03-10 KR KR1020017010868A patent/KR20020000773A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2000055587A1 (en) | 2000-09-21 |
KR20020000773A (ko) | 2002-01-05 |
JP2002539622A (ja) | 2002-11-19 |
EP1163499B1 (de) | 2007-09-19 |
US6200023B1 (en) | 2001-03-13 |
EP1163499A1 (de) | 2001-12-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |