DE60036249D1 - Feldeffekttransistor und dessen Herstellungsverfahren - Google Patents
Feldeffekttransistor und dessen HerstellungsverfahrenInfo
- Publication number
- DE60036249D1 DE60036249D1 DE60036249T DE60036249T DE60036249D1 DE 60036249 D1 DE60036249 D1 DE 60036249D1 DE 60036249 T DE60036249 T DE 60036249T DE 60036249 T DE60036249 T DE 60036249T DE 60036249 D1 DE60036249 D1 DE 60036249D1
- Authority
- DE
- Germany
- Prior art keywords
- production method
- field effect
- effect transistor
- transistor
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11149008A JP3086906B1 (ja) | 1999-05-28 | 1999-05-28 | 電界効果トランジスタ及びその製造方法 |
| JP14900899 | 1999-05-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60036249D1 true DE60036249D1 (de) | 2007-10-18 |
| DE60036249T2 DE60036249T2 (de) | 2008-06-05 |
Family
ID=15465664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60036249T Expired - Lifetime DE60036249T2 (de) | 1999-05-28 | 2000-03-30 | Feldeffekttransistor und dessen Herstellungsverfahren |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6316296B1 (de) |
| EP (1) | EP1056135B1 (de) |
| JP (1) | JP3086906B1 (de) |
| AU (1) | AU763794B2 (de) |
| CA (1) | CA2303471A1 (de) |
| DE (1) | DE60036249T2 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3086906B1 (ja) * | 1999-05-28 | 2000-09-11 | 工業技術院長 | 電界効果トランジスタ及びその製造方法 |
| DE19924571C2 (de) * | 1999-05-28 | 2001-03-15 | Siemens Ag | Verfahren zur Herstellung eines Doppel-Gate-MOSFET-Transistors |
| WO2001065609A1 (en) * | 2000-02-29 | 2001-09-07 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing same |
| DE10045045C2 (de) * | 2000-09-12 | 2002-09-19 | Infineon Technologies Ag | Herstellungsverfahren von Feldeffekttransistoren in integrierten Halbleiterschaltungen |
| KR100469165B1 (ko) * | 2001-12-22 | 2005-02-02 | 동부전자 주식회사 | 이중 게이트형 반도체 소자 및 그 제조방법 |
| KR100481209B1 (ko) | 2002-10-01 | 2005-04-08 | 삼성전자주식회사 | 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
| KR100499956B1 (ko) * | 2002-10-24 | 2005-07-05 | 전자부품연구원 | 양자채널이 형성된 모스펫을 이용한 포토디텍터 및 그제조방법 |
| EP1420450A3 (de) * | 2002-11-15 | 2006-12-13 | Matsushita Electric Industrial Co., Ltd. | Differentielle Halbleiterschaltung mit Transistoren, welche eine virtuelle Erdverbindung aufweisen |
| US6645797B1 (en) * | 2002-12-06 | 2003-11-11 | Advanced Micro Devices, Inc. | Method for forming fins in a FinFET device using sacrificial carbon layer |
| US6888199B2 (en) * | 2003-10-07 | 2005-05-03 | International Business Machines Corporation | High-density split-gate FinFET |
| KR100625177B1 (ko) | 2004-05-25 | 2006-09-20 | 삼성전자주식회사 | 멀티-브리지 채널형 모오스 트랜지스터의 제조 방법 |
| JP4796329B2 (ja) | 2004-05-25 | 2011-10-19 | 三星電子株式会社 | マルチ−ブリッジチャンネル型ｍｏｓトランジスタの製造方法 |
| US7250347B2 (en) * | 2005-01-28 | 2007-07-31 | International Business Machines Corporation | Double-gate FETs (Field Effect Transistors) |
| US20070090459A1 (en) * | 2005-10-26 | 2007-04-26 | Motorola, Inc. | Multiple gate printed transistor method and apparatus |
| US7482656B2 (en) * | 2006-06-01 | 2009-01-27 | International Business Machines Corporation | Method and structure to form self-aligned selective-SOI |
| FR2912548A1 (fr) * | 2007-06-05 | 2008-08-15 | Commissariat Energie Atomique | Realisation de contacts compacts pour des transistors a double grilles auto-alignees. |
| JP5367325B2 (ja) * | 2008-07-30 | 2013-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN104347725B (zh) * | 2013-07-25 | 2017-01-04 | 中国科学院微电子研究所 | 隧穿场效应晶体管的制造方法 |
| US9905700B2 (en) * | 2015-03-13 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device and driving method thereof |
| TWI595650B (zh) * | 2015-05-21 | 2017-08-11 | 蘇烱光 | 適應性雙閘極金氧半場效電晶體 |
| US11183594B2 (en) | 2018-03-28 | 2021-11-23 | Intel Corporation | Dual gate control for trench shaped thin film transistors |
| US11646372B2 (en) * | 2020-09-19 | 2023-05-09 | International Business Machines Corporation | Vertical transistor floating body one transistor DRAM memory cell |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626467A (en) | 1979-08-10 | 1981-03-14 | Toshiba Corp | Semiconductor device and the manufacturing process |
| EP0197424B1 (de) | 1985-03-25 | 1993-06-02 | Nec Corporation | Herstellungsverfahren für einem bipolaren Transistor mit Heteroübergang |
| JPS62224079A (ja) | 1986-03-26 | 1987-10-02 | Sony Corp | 電界効果トランジスタ |
| JP2586508B2 (ja) | 1987-08-31 | 1997-03-05 | ソニー株式会社 | Ｍｏｓトランジスタ |
| JPH02302044A (ja) | 1989-05-16 | 1990-12-14 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0354865A (ja) | 1989-07-24 | 1991-03-08 | Sharp Corp | 薄膜電界効果トランジスタ及びその製造方法 |
| JPH03155166A (ja) | 1989-11-14 | 1991-07-03 | Fuji Electric Co Ltd | 薄膜半導体素子 |
| JPH03266469A (ja) | 1990-03-16 | 1991-11-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5278102A (en) | 1990-08-18 | 1994-01-11 | Fujitsu Limited | SOI device and a fabrication process thereof |
| US5296727A (en) | 1990-08-24 | 1994-03-22 | Fujitsu Limited | Double gate FET and process for manufacturing same |
| JPH0824193B2 (ja) * | 1990-10-16 | 1996-03-06 | 工業技術院長 | 平板型光弁駆動用半導体装置の製造方法 |
| JP2603886B2 (ja) | 1991-05-09 | 1997-04-23 | 日本電信電話株式会社 | 薄層ｓｏｉ型絶縁ゲート型電界効果トランジスタの製造方法 |
| US5273921A (en) * | 1991-12-27 | 1993-12-28 | Purdue Research Foundation | Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor |
| JP2572003B2 (ja) | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
| US5736435A (en) * | 1995-07-03 | 1998-04-07 | Motorola, Inc. | Process for fabricating a fully self-aligned soi mosfet |
| US5658806A (en) * | 1995-10-26 | 1997-08-19 | National Science Council | Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration |
| US5574294A (en) * | 1995-12-22 | 1996-11-12 | International Business Machines Corporation | Vertical dual gate thin film transistor with self-aligned gates / offset drain |
| US6004837A (en) * | 1998-02-18 | 1999-12-21 | International Business Machines Corporation | Dual-gate SOI transistor |
| US6207530B1 (en) * | 1998-06-19 | 2001-03-27 | International Business Machines Corporation | Dual gate FET and process |
| JP3086906B1 (ja) * | 1999-05-28 | 2000-09-11 | 工業技術院長 | 電界効果トランジスタ及びその製造方法 |
-
1999
- 1999-05-28 JP JP11149008A patent/JP3086906B1/ja not_active Expired - Lifetime
-
2000
- 2000-03-28 US US09/536,681 patent/US6316296B1/en not_active Expired - Fee Related
- 2000-03-30 EP EP00302663A patent/EP1056135B1/de not_active Expired - Lifetime
- 2000-03-30 DE DE60036249T patent/DE60036249T2/de not_active Expired - Lifetime
- 2000-03-30 CA CA002303471A patent/CA2303471A1/en not_active Abandoned
- 2000-03-31 AU AU25173/00A patent/AU763794B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU763794B2 (en) | 2003-07-31 |
| AU2517300A (en) | 2000-11-30 |
| CA2303471A1 (en) | 2000-11-28 |
| EP1056135A1 (de) | 2000-11-29 |
| JP2000340793A (ja) | 2000-12-08 |
| DE60036249T2 (de) | 2008-06-05 |
| JP3086906B1 (ja) | 2000-09-11 |
| US6316296B1 (en) | 2001-11-13 |
| EP1056135B1 (de) | 2007-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806 |