DE60033423D1 - Ofen - Google Patents

Ofen

Info

Publication number
DE60033423D1
DE60033423D1 DE60033423T DE60033423T DE60033423D1 DE 60033423 D1 DE60033423 D1 DE 60033423D1 DE 60033423 T DE60033423 T DE 60033423T DE 60033423 T DE60033423 T DE 60033423T DE 60033423 D1 DE60033423 D1 DE 60033423D1
Authority
DE
Germany
Prior art keywords
oven
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033423T
Other languages
English (en)
Other versions
DE60033423T2 (de
Inventor
Yukimasa Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE60033423D1 publication Critical patent/DE60033423D1/de
Application granted granted Critical
Publication of DE60033423T2 publication Critical patent/DE60033423T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Formation Of Insulating Films (AREA)
DE60033423T 1999-11-09 2000-11-09 Ofen Expired - Lifetime DE60033423T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP31792999 1999-11-09
JP31792999 1999-11-09
JP2000184309A JP3543949B2 (ja) 1999-11-09 2000-06-20 熱処理装置
JP2000184309 2000-06-20
PCT/JP2000/007886 WO2001035453A1 (fr) 1999-11-09 2000-11-09 Dispositif de traitement thermique

Publications (2)

Publication Number Publication Date
DE60033423D1 true DE60033423D1 (de) 2007-03-29
DE60033423T2 DE60033423T2 (de) 2007-11-29

Family

ID=26569191

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033423T Expired - Lifetime DE60033423T2 (de) 1999-11-09 2000-11-09 Ofen

Country Status (7)

Country Link
US (1) US6936108B1 (de)
EP (1) EP1235262B1 (de)
JP (1) JP3543949B2 (de)
KR (1) KR100636436B1 (de)
DE (1) DE60033423T2 (de)
TW (1) TW473791B (de)
WO (1) WO2001035453A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002035590A1 (fr) * 2000-10-27 2002-05-02 Tokyo Electron Limited Dispositif de traitement thermique
JP3554847B2 (ja) * 2001-07-30 2004-08-18 東京エレクトロン株式会社 熱処理装置
JP4813854B2 (ja) * 2005-09-09 2011-11-09 株式会社日立国際電気 基板処理装置及び半導体の製造方法
JP5075819B2 (ja) * 2006-06-28 2012-11-21 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
US8662886B2 (en) * 2007-11-12 2014-03-04 Micrel, Inc. System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
TWI381475B (zh) * 2009-03-23 2013-01-01 Au Optronics Corp 基板處理系統及顯影方法
JP5842032B2 (ja) * 2014-05-26 2016-01-13 光洋サーモシステム株式会社 基板の熱処理装置
CN104197731A (zh) * 2014-09-15 2014-12-10 常州宝仪机电设备有限公司 防爆窑炉的控制柜
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
CN112349623A (zh) * 2019-08-06 2021-02-09 株式会社国际电气 基板处理装置、半导体装置的制造方法和计算机可读取记录介质

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676999A (en) * 1984-09-17 1987-06-30 Mitsubishi Jukogyo Kabushiki Kaisha Method for vacuum deposition plating steel strip
JPS6317520A (ja) * 1986-07-10 1988-01-25 Hitachi Metals Ltd 化学気相成長装置用圧力制御装置
JP2598637B2 (ja) 1987-02-26 1997-04-09 東京エレクトロン株式会社 酸化・拡散装置
JPH0626248A (ja) 1992-07-06 1994-02-01 Shiroki Corp シリンダ錠
JPH0653149A (ja) * 1992-07-31 1994-02-25 Tokyo Electron Ltd 半導体製造装置用シール材
JPH0626248U (ja) * 1992-09-03 1994-04-08 神鋼電機株式会社 表面処理装置
JP3134137B2 (ja) * 1993-01-13 2001-02-13 東京エレクトロン株式会社 縦型処理装置
US5407349A (en) * 1993-01-22 1995-04-18 International Business Machines Corporation Exhaust system for high temperature furnace
JP3262623B2 (ja) * 1993-02-17 2002-03-04 東京エレクトロン株式会社 減圧処理方法及び装置
US5445521A (en) * 1993-05-31 1995-08-29 Tokyo Electron Kabushiki Kaisha Heat treating method and device
US5484484A (en) 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JPH0758032A (ja) 1993-08-09 1995-03-03 Hitachi Electron Eng Co Ltd 圧力制御装置および圧力制御方法
US5777300A (en) * 1993-11-19 1998-07-07 Tokyo Electron Kabushiki Kaisha Processing furnace for oxidizing objects
US5421894A (en) * 1994-02-24 1995-06-06 Applied Materials, Inc. Power loss recovery for wafer heater
JP3501524B2 (ja) * 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JPH08139085A (ja) * 1994-11-04 1996-05-31 Nippon Steel Corp 半導体製造装置
US5851293A (en) 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
US5888579A (en) * 1996-07-29 1999-03-30 Texas Instruments-Acer Incorporated Method and apparatus for preventing particle contamination in a process chamber
TW410237B (en) * 1996-12-25 2000-11-01 Nippon Steel Corp Vacuum, pressure reduction refining method and the vacuum, pressure reduction refining equipment
JP3270730B2 (ja) * 1997-03-21 2002-04-02 株式会社日立国際電気 基板処理装置及び基板処理方法
JP3567070B2 (ja) * 1997-12-27 2004-09-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP3592923B2 (ja) * 1998-02-13 2004-11-24 東京エレクトロン株式会社 排気装置
US6165272A (en) * 1998-09-18 2000-12-26 Taiwan Semiconductor Manufacturing Company, Ltd Closed-loop controlled apparatus for preventing chamber contamination
US6106626A (en) * 1998-12-03 2000-08-22 Taiwan Semincondutor Manufacturing Company, Ltd Apparatus and method for preventing chamber contamination
JP2001023978A (ja) 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
US20020020433A1 (en) * 1999-12-28 2002-02-21 Asami Suemura Oxidation apparatus and method of cleaning the same
US7076920B2 (en) * 2000-03-22 2006-07-18 Mks Instruments, Inc. Method of using a combination differential and absolute pressure transducer for controlling a load lock
US6578600B1 (en) * 2000-10-31 2003-06-17 International Business Machines Corporation Gas isolation box
JP3554847B2 (ja) * 2001-07-30 2004-08-18 東京エレクトロン株式会社 熱処理装置
KR100461845B1 (ko) * 2002-01-07 2004-12-14 주성엔지니어링(주) 액체운송장치의 안정성 확보 시스템
KR100863782B1 (ko) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
JP3999059B2 (ja) * 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP4093462B2 (ja) * 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US6954585B2 (en) * 2002-12-03 2005-10-11 Tokyo Electron Limited Substrate processing method and apparatus

Also Published As

Publication number Publication date
DE60033423T2 (de) 2007-11-29
JP3543949B2 (ja) 2004-07-21
KR100636436B1 (ko) 2006-10-18
JP2001201263A (ja) 2001-07-27
EP1235262A1 (de) 2002-08-28
KR20020049029A (ko) 2002-06-24
TW473791B (en) 2002-01-21
WO2001035453A1 (fr) 2001-05-17
EP1235262A4 (de) 2005-01-05
EP1235262B1 (de) 2007-02-14
US6936108B1 (en) 2005-08-30

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: SAITO, YUKIMASA, KANAGAWA, JP

8364 No opposition during term of opposition