DE60033423D1 - Ofen - Google Patents
OfenInfo
- Publication number
- DE60033423D1 DE60033423D1 DE60033423T DE60033423T DE60033423D1 DE 60033423 D1 DE60033423 D1 DE 60033423D1 DE 60033423 T DE60033423 T DE 60033423T DE 60033423 T DE60033423 T DE 60033423T DE 60033423 D1 DE60033423 D1 DE 60033423D1
- Authority
- DE
- Germany
- Prior art keywords
- oven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31792999 | 1999-11-09 | ||
JP31792999 | 1999-11-09 | ||
JP2000184309A JP3543949B2 (ja) | 1999-11-09 | 2000-06-20 | 熱処理装置 |
JP2000184309 | 2000-06-20 | ||
PCT/JP2000/007886 WO2001035453A1 (fr) | 1999-11-09 | 2000-11-09 | Dispositif de traitement thermique |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60033423D1 true DE60033423D1 (de) | 2007-03-29 |
DE60033423T2 DE60033423T2 (de) | 2007-11-29 |
Family
ID=26569191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60033423T Expired - Lifetime DE60033423T2 (de) | 1999-11-09 | 2000-11-09 | Ofen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6936108B1 (de) |
EP (1) | EP1235262B1 (de) |
JP (1) | JP3543949B2 (de) |
KR (1) | KR100636436B1 (de) |
DE (1) | DE60033423T2 (de) |
TW (1) | TW473791B (de) |
WO (1) | WO2001035453A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002035590A1 (fr) * | 2000-10-27 | 2002-05-02 | Tokyo Electron Limited | Dispositif de traitement thermique |
JP3554847B2 (ja) * | 2001-07-30 | 2004-08-18 | 東京エレクトロン株式会社 | 熱処理装置 |
JP4813854B2 (ja) * | 2005-09-09 | 2011-11-09 | 株式会社日立国際電気 | 基板処理装置及び半導体の製造方法 |
JP5075819B2 (ja) * | 2006-06-28 | 2012-11-21 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
US8662886B2 (en) * | 2007-11-12 | 2014-03-04 | Micrel, Inc. | System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth |
JP4961381B2 (ja) * | 2008-04-14 | 2012-06-27 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
TWI381475B (zh) * | 2009-03-23 | 2013-01-01 | Au Optronics Corp | 基板處理系統及顯影方法 |
JP5842032B2 (ja) * | 2014-05-26 | 2016-01-13 | 光洋サーモシステム株式会社 | 基板の熱処理装置 |
CN104197731A (zh) * | 2014-09-15 | 2014-12-10 | 常州宝仪机电设备有限公司 | 防爆窑炉的控制柜 |
JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
CN112349623A (zh) * | 2019-08-06 | 2021-02-09 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法和计算机可读取记录介质 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676999A (en) * | 1984-09-17 | 1987-06-30 | Mitsubishi Jukogyo Kabushiki Kaisha | Method for vacuum deposition plating steel strip |
JPS6317520A (ja) * | 1986-07-10 | 1988-01-25 | Hitachi Metals Ltd | 化学気相成長装置用圧力制御装置 |
JP2598637B2 (ja) | 1987-02-26 | 1997-04-09 | 東京エレクトロン株式会社 | 酸化・拡散装置 |
JPH0626248A (ja) | 1992-07-06 | 1994-02-01 | Shiroki Corp | シリンダ錠 |
JPH0653149A (ja) * | 1992-07-31 | 1994-02-25 | Tokyo Electron Ltd | 半導体製造装置用シール材 |
JPH0626248U (ja) * | 1992-09-03 | 1994-04-08 | 神鋼電機株式会社 | 表面処理装置 |
JP3134137B2 (ja) * | 1993-01-13 | 2001-02-13 | 東京エレクトロン株式会社 | 縦型処理装置 |
US5407349A (en) * | 1993-01-22 | 1995-04-18 | International Business Machines Corporation | Exhaust system for high temperature furnace |
JP3262623B2 (ja) * | 1993-02-17 | 2002-03-04 | 東京エレクトロン株式会社 | 減圧処理方法及び装置 |
US5445521A (en) * | 1993-05-31 | 1995-08-29 | Tokyo Electron Kabushiki Kaisha | Heat treating method and device |
US5484484A (en) | 1993-07-03 | 1996-01-16 | Tokyo Electron Kabushiki | Thermal processing method and apparatus therefor |
US5578132A (en) * | 1993-07-07 | 1996-11-26 | Tokyo Electron Kabushiki Kaisha | Apparatus for heat treating semiconductors at normal pressure and low pressure |
JPH0758032A (ja) | 1993-08-09 | 1995-03-03 | Hitachi Electron Eng Co Ltd | 圧力制御装置および圧力制御方法 |
US5777300A (en) * | 1993-11-19 | 1998-07-07 | Tokyo Electron Kabushiki Kaisha | Processing furnace for oxidizing objects |
US5421894A (en) * | 1994-02-24 | 1995-06-06 | Applied Materials, Inc. | Power loss recovery for wafer heater |
JP3501524B2 (ja) * | 1994-07-01 | 2004-03-02 | 東京エレクトロン株式会社 | 処理装置の真空排気システム |
JPH08139085A (ja) * | 1994-11-04 | 1996-05-31 | Nippon Steel Corp | 半導体製造装置 |
US5851293A (en) | 1996-03-29 | 1998-12-22 | Atmi Ecosys Corporation | Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations |
US5888579A (en) * | 1996-07-29 | 1999-03-30 | Texas Instruments-Acer Incorporated | Method and apparatus for preventing particle contamination in a process chamber |
TW410237B (en) * | 1996-12-25 | 2000-11-01 | Nippon Steel Corp | Vacuum, pressure reduction refining method and the vacuum, pressure reduction refining equipment |
JP3270730B2 (ja) * | 1997-03-21 | 2002-04-02 | 株式会社日立国際電気 | 基板処理装置及び基板処理方法 |
JP3567070B2 (ja) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JP3592923B2 (ja) * | 1998-02-13 | 2004-11-24 | 東京エレクトロン株式会社 | 排気装置 |
US6165272A (en) * | 1998-09-18 | 2000-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Closed-loop controlled apparatus for preventing chamber contamination |
US6106626A (en) * | 1998-12-03 | 2000-08-22 | Taiwan Semincondutor Manufacturing Company, Ltd | Apparatus and method for preventing chamber contamination |
JP2001023978A (ja) | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | 半導体装置の製造装置および製造方法 |
US20020020433A1 (en) * | 1999-12-28 | 2002-02-21 | Asami Suemura | Oxidation apparatus and method of cleaning the same |
US7076920B2 (en) * | 2000-03-22 | 2006-07-18 | Mks Instruments, Inc. | Method of using a combination differential and absolute pressure transducer for controlling a load lock |
US6578600B1 (en) * | 2000-10-31 | 2003-06-17 | International Business Machines Corporation | Gas isolation box |
JP3554847B2 (ja) * | 2001-07-30 | 2004-08-18 | 東京エレクトロン株式会社 | 熱処理装置 |
KR100461845B1 (ko) * | 2002-01-07 | 2004-12-14 | 주성엔지니어링(주) | 액체운송장치의 안정성 확보 시스템 |
KR100863782B1 (ko) * | 2002-03-08 | 2008-10-16 | 도쿄엘렉트론가부시키가이샤 | 기판처리장치 및 기판처리방법 |
JP3999059B2 (ja) * | 2002-06-26 | 2007-10-31 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
JP4093462B2 (ja) * | 2002-10-09 | 2008-06-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
US6954585B2 (en) * | 2002-12-03 | 2005-10-11 | Tokyo Electron Limited | Substrate processing method and apparatus |
-
2000
- 2000-06-20 JP JP2000184309A patent/JP3543949B2/ja not_active Expired - Lifetime
- 2000-11-09 TW TW089123699A patent/TW473791B/zh not_active IP Right Cessation
- 2000-11-09 KR KR1020027005843A patent/KR100636436B1/ko active IP Right Grant
- 2000-11-09 EP EP00974864A patent/EP1235262B1/de not_active Expired - Lifetime
- 2000-11-09 WO PCT/JP2000/007886 patent/WO2001035453A1/ja active IP Right Grant
- 2000-11-09 US US10/129,661 patent/US6936108B1/en not_active Expired - Lifetime
- 2000-11-09 DE DE60033423T patent/DE60033423T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60033423T2 (de) | 2007-11-29 |
JP3543949B2 (ja) | 2004-07-21 |
KR100636436B1 (ko) | 2006-10-18 |
JP2001201263A (ja) | 2001-07-27 |
EP1235262A1 (de) | 2002-08-28 |
KR20020049029A (ko) | 2002-06-24 |
TW473791B (en) | 2002-01-21 |
WO2001035453A1 (fr) | 2001-05-17 |
EP1235262A4 (de) | 2005-01-05 |
EP1235262B1 (de) | 2007-02-14 |
US6936108B1 (en) | 2005-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Inventor name: SAITO, YUKIMASA, KANAGAWA, JP |
|
8364 | No opposition during term of opposition |