DE527789C - Rectifier for alternating current - Google Patents

Rectifier for alternating current

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Publication number
DE527789C
DE527789C DEB131529D DEB0131529D DE527789C DE 527789 C DE527789 C DE 527789C DE B131529 D DEB131529 D DE B131529D DE B0131529 D DEB0131529 D DE B0131529D DE 527789 C DE527789 C DE 527789C
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DE
Germany
Prior art keywords
rectifier
metal
sulfur
compounds
alternating current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEB131529D
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German (de)
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Individual
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Individual
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Application filed by Individual filed Critical Individual
Priority to DEB131529D priority Critical patent/DE527789C/en
Application granted granted Critical
Publication of DE527789C publication Critical patent/DE527789C/en
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H02M7/10—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode arranged for operation in series, e.g. for multiplication of voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Description

Gleichrichter für Wechselstrom Die Erfindung betrifft einen Gleichrichter für Wechselstrom, der nach dem Patent 518 421 hergestellt ist. Versuche haben gezeigt, daß eine Ventilwirkung, also eine gleichrichtende Wirkung von hohem Wirkungsgrad, erzielbar ist, wenn von mehreren in den gleichzurichtenden Wechselstrom in Serie eingeschalteten Gleichrichterelementen nur eines oder mehrere derselben vor Einschaltung in den Betriebswechselstrom polarisiert werden, und zwar vorzugsweise im Gleichstrom. Die Gleichrichterelemente bestehen dabei vorteilhaft je aus mehreren Körpern aus Metallschwefelverbindungen. Die mit diesen Gleichrichterelementen zusammenwirkenden Elektroden bestehen, wie an sich bekannt, aus Metall oder einer Metallegierung, und zwar kommt vorteilhaft auf der einen Seite der Körper aus Metallschwefelverbindungen, wie an sich für Gleichrichter bekannt, Zink oder dessen Legierungen mit Kupfer oder eine Aluminiumlegierung zur Anwendung und auf der anderen Seite Nickel.Rectifier for alternating current The invention relates to a rectifier for alternating current which is manufactured according to patent 518,421. Tests have shown that a valve effect, i.e. a rectifying effect of high efficiency, can be achieved if, of several rectifier elements connected in series to the alternating current to be rectified, only one or more of the same are polarized before being switched to the operating alternating current, preferably in direct current. The rectifier elements each advantageously consist of several bodies made of metal-sulfur compounds. The electrodes interacting with these rectifier elements consist, as known per se, of metal or a metal alloy, namely advantageously on one side of the body made of metal-sulfur compounds, as is known per se for rectifiers, zinc or its alloys with copper or an aluminum alloy and on the other hand nickel.

Abb. i: zeigt z. B. einen Gleichrichter, bei dem die erste Schicht, a, aus Zink oder dessen Legierungen mit Kupfer oder aus einer Aluminiumlegierung, die zweite, b, aus Schwefelkupfer, die dritte, e, aus Bleiglanz und der Endkontakt d aus dem zu Schwefel geringe Affinität aufweisenden Nickel besteht. Bei Anwendung einer Säule aus mehreren Elementen kommt dieser Endkontakt nur am Ende der Säule zur Anwendung (s. Abb. 2). Gegebenenfalls kann auch eine der Metallverbindungsschichten, insbesondere Schwefelkupfer, inFortfallkommen. Eszeigtsichdannaber,daß das Element stark zu Funkenbildung neigt, welche das Gleichbleiben der Wirkung beeinträchtigt, d. h also mit der Zeit die Wirkung verschlechtert.Fig. I: shows e.g. B. a rectifier, in which the first layer, a, made of zinc or its alloys with copper or an aluminum alloy, the second, b, made of copper sulphide, the third, e, made of galena and the end contact d of the low affinity for sulfur containing nickel. When using a column made up of several elements, this end contact is only used at the end of the column (see Fig. 2). Optionally, one of the metal connection layers, in particular copper sulphide, can also be lost. It is then shown that the element has a strong tendency to generate sparks, which impairs the stability of the effect, i.e. So the effect worsens over time.

Bekannt war es, einen Schwefelkupferkörper zusammen mit einem Aluminiumkörper zu benutzen, der mit einer Aluminiumsulfidhaut überzogen war. Bei diesem bekannten Gleichrichter kam also nur ein Körper aus einem Schwefelmetall zur Anwendung, während der zweite Körper im wesentlichen aus Metall bestand, der mit Schwefelaluminium überzogen war. Außerdem war bei diesem bekannten Gleichrichter eine elektrische Vorbehandlung nicht vorgesehen.It was known to have a copper sulfur body together with an aluminum body to use, which was coated with an aluminum sulfide skin. With this well-known Rectifier so only a body made of a sulfur metal was used while the second body consisted essentially of metal, that with sulfur aluminum was covered. In addition, this known rectifier was an electrical one Pre-treatment not provided.

Wesentlich ist es bei Anwendung derartiger Gleichrichter, daß die Kontaktflächen innig aufeinanderliegen. Dies ist beiden handelsüblichen Metallverbindungen schwer erreichbar. Es zeigt sich auch, daß die handelsüblichen Metallverbindungen vielfach nicht genügend homogen sind und infolgedessen vorzeitig in ihrer Wirkung ermüden. Besonders gute und gleichbleibende Wirkung erzielt man, wenn die zur Verwendung kommenden Metallverbindungen, insbesondere Schwefelmetallverbindungen, in folgender Weise hergestellt sind: Die Grundstoffe der Metallverbindungen oder die vorher auf irgendwelche Weise bereits hergestellten Metallverbindungen werden pulverisiert oder gekörnt und in einer der Gebrauchsform des zu erzeugenden Gegenstandes entsprechenden Form vorzugsweise unter Sauerstoffausschluß und unter Druck erwärmt. Bei Herstellung von Körpern aus gekörnten Schwefelmetallverbindungen kann mit Vorteil freier Schwefel zugesetzt werden. Die Erwärmung wird vorteilhaft durch elektrischen Stromdurchfluß erzielt. Auf diese Weise lassen sich besonders gut Schwefelmetallverbindungen in beliebiger Formgebung herstellen, und die so erzielten Körper sind vollkommen homogen. Die zur Erzeugung der Verbindungen aufzuwendende Wänne ist verhältnismäßig gering.It is essential when using such rectifiers that the Contact surfaces lie closely on top of one another. This is both commercially available metal compounds hard to reach. It is also shown that the commercially available metal compounds are often not sufficiently homogeneous and consequently premature in their effect fatigue. A particularly good and consistent effect is achieved when the for use coming metal compounds, in particular sulfur metal compounds, in the following Ways are made: The basic materials of the metal compounds or those previously made on any way already established Metal compounds are pulverized or granular and in one of the form of use of the object to be produced corresponding form preferably heated with the exclusion of oxygen and under pressure. When producing bodies from granular sulfur-metal compounds can be advantageous free sulfur can be added. The heating is beneficial by electrical Current flow achieved. In this way, sulfur-metal compounds can be particularly good Manufacture in any shape, and the resulting bodies are perfect homogeneous. The Wänne expended to produce the connections is proportionate small amount.

Bekannt war es an sich, gekörnte Schwefelmetallverbindungen in Gebrauchsformen zu pressen und die Preßlinge sodann zur Erhöhung des Zusammenhaltens der Teilchen zu erwärmen.It was known per se, granular sulfur metal compounds in usage forms to press and then the compacts to increase the cohesion of the particles to warm up.

Claims (2)

PATENTANSPRÜCHE: i. Gleichrichter für Wechselstrom, hergestellt nach dem Patent 518 421, dadurch gekennzeichnet, daß bei Anwendung mehrerer hintereinandergeschalteter Gleichrichterelemente nur eines oder mehrere derselben vor der Betriebswechselstrombelastung, vorzugsweise im Gleichstrom, polarisiert sind. PATENT CLAIMS: i. Rectifier for alternating current, manufactured according to the patent 518 421, characterized in that when using several series-connected Rectifier elements only one or more of the same before the operational AC load, are preferably polarized in direct current. 2. Gleichrichter nach Anspruch i, dadurch gekennzeichnet, daß als Gleichrichterelement mehrere Körper aus Metallschwefelverbindungen benutzt werden und die mit diesem Element zusammenwirkende Elektrode, wie an sich bekannt, aus Metall oder einer Metallegierung besteht. 3. Gleichrichter nach Anspruch i, bei welchem die eine Elektrode aus Zink oder dessen Legierungen mit Kupfer oder einer Aluminiumlegierung besteht, dadurch gekennzeichnet, daß die andere Elektrode aus Nickel besteht. 4. Verfahren zur Herstellung der für den Gleichrichter nach Anspruch i bis 3 dienenden, aus Metallschwefelverbindungen bestehenden Gleichrichterstoffe, bei welchem die Grundstoffe der Schwefelmetallverbindungen oder die Schwefelmetallverbindungen selbst pulverisiert oder gekörnt unter Druck erwärmt werden, dadurch gekennzeichnet, daß das Pressen in der Gebrauchsform unter Sauerstoffausschluß erfolgt. 5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, daß die Erwärmung durch elektrischen Stromdurchfluß bewirkt wird.2. Rectifier according to claim i, characterized in that a plurality of bodies made of metal-sulfur compounds are used as the rectifier element and the electrode interacting with this element, as known per se, consists of metal or a metal alloy. 3. Rectifier according to claim i, in which one electrode consists of zinc or its alloys with copper or an aluminum alloy, characterized in that the other electrode consists of nickel. 4. A process for the production of the rectifier substances used for the rectifier according to claims i to 3 , consisting of metal-sulfur compounds, in which the base materials of the sulfur-metal compounds or the sulfur-metal compounds themselves are pulverized or granularly heated under pressure, characterized in that the pressing in the use form with the exclusion of oxygen he follows. 5. The method according to claim 4, characterized in that the heating is effected by electrical current flow.
DEB131529D 1927-05-21 1927-05-22 Rectifier for alternating current Expired DE527789C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEB131529D DE527789C (en) 1927-05-21 1927-05-22 Rectifier for alternating current

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEB0131551 1927-05-21
DEB0131529 1927-05-21
DEB131529D DE527789C (en) 1927-05-21 1927-05-22 Rectifier for alternating current
DEB0133428 1927-09-14

Publications (1)

Publication Number Publication Date
DE527789C true DE527789C (en) 1931-10-16

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ID=27209443

Family Applications (1)

Application Number Title Priority Date Filing Date
DEB131529D Expired DE527789C (en) 1927-05-21 1927-05-22 Rectifier for alternating current

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BE (1) BE351435A (en)
DE (1) DE527789C (en)
FR (1) FR657791A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976655C (en) * 1951-11-24 1964-01-30 Francois Gans Process for the production of photoresist cells from powders of cadmium sulfide, cadmium selenide or cadmium telluride

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL154418B (en) * 1948-10-01 Hahn Carl Dr Gmbh APPARATUS FOR APPLYING THE FREE ENDS OF A RETRACT STRAP TO AN FRONT SIDE OF A TAMPON WRAPPING.
DE926378C (en) * 1948-10-02 1955-04-14 Licentia Gmbh Electrically asymmetrically conductive system, in particular dry rectifier, with a sequence of semiconductor layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976655C (en) * 1951-11-24 1964-01-30 Francois Gans Process for the production of photoresist cells from powders of cadmium sulfide, cadmium selenide or cadmium telluride

Also Published As

Publication number Publication date
BE351435A (en) 1900-01-01
FR657791A (en) 1929-06-13

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