DE499451C - Process for the production of valve members for AC valves or rectifiers - Google Patents

Process for the production of valve members for AC valves or rectifiers

Info

Publication number
DE499451C
DE499451C DEW71637D DEW0071637D DE499451C DE 499451 C DE499451 C DE 499451C DE W71637 D DEW71637 D DE W71637D DE W0071637 D DEW0071637 D DE W0071637D DE 499451 C DE499451 C DE 499451C
Authority
DE
Germany
Prior art keywords
rectifiers
valves
production
valve members
copper body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEW71637D
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to DEW71637D priority Critical patent/DE499451C/en
Application granted granted Critical
Publication of DE499451C publication Critical patent/DE499451C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Heat Treatment Of Articles (AREA)

Description

Patentiert im Deutschen Reiche vom 3. Februar 1926 ab Aus der franz. Patentschrift 595 9o9 der Erfinderin ist bekannt, wie man ein Ventilglied als Wechselstromventil oder Gleichrichter, bestehend aus einem Kupferkörper mit aus ihm selbst erzeugter Oxydulschicht, durch Erhitzen des Kupferkörpers bei Gegenwart von Sauerstoff unter Annäherung an die zur Bildung einer glasigen Oberfläche führende Temperatur und plötzliches Abkühlen- oder Abschrecken mit besonderer Gleichförmigkeit und Dichte der Oxydulschicht herstellen kann. Mit .dem vorliegend beschriebenen Verfahren wird diese Herstellungsweise weiterhin dadurch verbessert, daß der erhitzte Kupferkessel vor der plötzlichen Abkühlung einer allmählichen Herabkühlung auf eitle gewisse Zwischentemperatur unterworfen wird. Die hiermit erzielte Verbesserung des Erzeugnisses insbesondere =lärm; daß die Oxydulschicht an dem Kupfer-`L-orper besonders fest und innig haftet.Patented in the German Empire on February 3, 1926 from the French. The inventor's patent specification 595 909 discloses how to use a valve member as an alternating current valve or rectifier, consisting of a copper body with self-made Oxydulschicht, by heating the copper body in the presence of oxygen underneath Approach to the temperature leading to the formation of a glassy surface and sudden cooling or quenching with particular uniformity and density the Oxydulschicht can produce. With the method described here, this manufacturing method is further improved by the fact that the heated copper kettle before the sudden cooling, a gradual cooling down to a vain sort of thing Intermediate temperature is subjected. The resulting improvement in the product especially = noise; that the oxide layer on the copper body is particularly strong and adheres intimately.

Das Verfahren wird zweckmäßig wie folgt ausgeführt. Ein vorzugsweise platten- oder scheibenförmiger Kupferkörper wird zuerst in irgendeiner geeigneten Weise, z. B. wie, aus der genannten Patentschrift bekannt durch mechanische Behandlung mit -dem Sandstrahlgebläse oder durch kurzes Eintauchen in alkalische Lauge mit nachfolgendem Waschen, an seiner Oberfläche vollkommen metallisch rein gemacht. Der Kupferkörper wird dann bei Gegenwart von Luft, vorzugsweise im elektrischen Ofen, auf einen der Temperatur von zooo° naheliegenden Wär- The method is conveniently carried out as follows. A preferably plate or disk-shaped copper body is first in any suitable manner, e.g. B. as known from the patent mentioned by mechanical treatment with the sandblasting fan or by brief immersion in alkaline liquor with subsequent washing, made completely metallic pure on its surface. The copper body is then heated to a temperature close to zooo ° in the presence of air, preferably in an electric furnace.

Claims (1)

PATENTANSPRÜCHE: r. Verfahren zur Herstellung von Ventilgliedern für. Wechselstromventile oder Gleichrichter, welche aus einem Kupfer- PATENT CLAIMS: r. Process for the manufacture of valve members for. AC valves or rectifiers, which are made of a copper
DEW71637D 1926-02-02 1926-02-03 Process for the production of valve members for AC valves or rectifiers Expired DE499451C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEW71637D DE499451C (en) 1926-02-02 1926-02-03 Process for the production of valve members for AC valves or rectifiers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEW0071637 1926-02-02
DEW71637D DE499451C (en) 1926-02-02 1926-02-03 Process for the production of valve members for AC valves or rectifiers

Publications (1)

Publication Number Publication Date
DE499451C true DE499451C (en) 1930-06-06

Family

ID=26003075

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW71637D Expired DE499451C (en) 1926-02-02 1926-02-03 Process for the production of valve members for AC valves or rectifiers

Country Status (1)

Country Link
DE (1) DE499451C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793968A (en) * 1954-05-28 1957-05-28 Gen Electric Method of making copper oxide rectifier cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2793968A (en) * 1954-05-28 1957-05-28 Gen Electric Method of making copper oxide rectifier cells

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