DE4192352T - - Google Patents
Info
- Publication number
- DE4192352T DE4192352T DE19914192352 DE4192352T DE4192352T DE 4192352 T DE4192352 T DE 4192352T DE 19914192352 DE19914192352 DE 19914192352 DE 4192352 T DE4192352 T DE 4192352T DE 4192352 T DE4192352 T DE 4192352T
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59342390A | 1990-10-05 | 1990-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4192352T true DE4192352T (da) | 1992-10-08 |
Family
ID=24374648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19914192352 Withdrawn DE4192352T (da) | 1990-10-05 | 1991-10-02 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH04505830A (da) |
DE (1) | DE4192352T (da) |
GB (1) | GB2254187A (da) |
WO (1) | WO1992006497A1 (da) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2965283B2 (ja) * | 1994-07-13 | 1999-10-18 | ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド | 薄膜トランジスタの製造方法 |
GB2338105B (en) * | 1997-03-04 | 2000-04-12 | Lg Electronics Inc | Method of making a thin film transistor |
KR100392909B1 (ko) | 1997-08-26 | 2004-03-22 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터및그의제조방법 |
FR2761809B1 (fr) * | 1997-03-04 | 2002-03-01 | Lg Electronics Inc | Transistor en couche mince et son procede de fabrication |
KR100248123B1 (ko) * | 1997-03-04 | 2000-03-15 | 구본준 | 박막트랜지스터및그의제조방법 |
KR100430950B1 (ko) * | 1998-09-01 | 2004-06-16 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0071244B1 (en) * | 1981-07-27 | 1988-11-23 | Kabushiki Kaisha Toshiba | Thin-film transistor and method of manufacture therefor |
US4651185A (en) * | 1983-08-15 | 1987-03-17 | Alphasil, Inc. | Method of manufacturing thin film transistors and transistors made thereby |
JPS62239579A (ja) * | 1986-04-10 | 1987-10-20 | Alps Electric Co Ltd | 薄膜トランジスタの製造方法 |
US4862234A (en) * | 1986-11-29 | 1989-08-29 | Sharp Kabushiki Kaisha | Thin-film transistor |
US4767723A (en) * | 1987-10-30 | 1988-08-30 | International Business Machines Corporation | Process for making self-aligning thin film transistors |
-
1991
- 1991-10-02 JP JP51794791A patent/JPH04505830A/ja active Pending
- 1991-10-02 WO PCT/US1991/007335 patent/WO1992006497A1/en active Application Filing
- 1991-10-02 DE DE19914192352 patent/DE4192352T/de not_active Withdrawn
-
1992
- 1992-04-30 GB GB9209424A patent/GB2254187A/en not_active Withdrawn
Non-Patent Citations (2)
Title |
---|
Appl. Phys. Lett. 54 (21), May 1989, pp. 2079-2081 * |
Technische Rundschau 50/86, pp. 76-81 * |
Also Published As
Publication number | Publication date |
---|---|
GB2254187A (en) | 1992-09-30 |
JPH04505830A (ja) | 1992-10-08 |
WO1992006497A1 (en) | 1992-04-16 |
GB9209424D0 (en) | 1992-07-22 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8128 | New person/name/address of the agent |
Representative=s name: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947 |
|
8110 | Request for examination paragraph 44 | ||
8120 | Willingness to grant licenses paragraph 23 | ||
8139 | Disposal/non-payment of the annual fee |