DE3889735D1 - Chemischer dampfniederschlagsreaktor und dessen verwendung. - Google Patents
Chemischer dampfniederschlagsreaktor und dessen verwendung.Info
- Publication number
- DE3889735D1 DE3889735D1 DE3889735T DE3889735T DE3889735D1 DE 3889735 D1 DE3889735 D1 DE 3889735D1 DE 3889735 T DE3889735 T DE 3889735T DE 3889735 T DE3889735 T DE 3889735T DE 3889735 D1 DE3889735 D1 DE 3889735D1
- Authority
- DE
- Germany
- Prior art keywords
- chemical vapor
- vapor deposit
- deposit reactor
- reactor
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1988/004590 WO1990007019A1 (en) | 1988-12-21 | 1988-12-21 | Chemical vapor deposition reactor and method for use thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3889735D1 true DE3889735D1 (de) | 1994-06-30 |
DE3889735T2 DE3889735T2 (de) | 1994-09-08 |
Family
ID=22209060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3889735T Expired - Fee Related DE3889735T2 (de) | 1988-12-21 | 1988-12-21 | Chemischer dampfniederschlagsreaktor und dessen verwendung. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0449821B1 (de) |
JP (1) | JPH04504442A (de) |
KR (1) | KR960015377B1 (de) |
DE (1) | DE3889735T2 (de) |
WO (1) | WO1990007019A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60129294A (ja) * | 1983-12-16 | 1985-07-10 | Hoya Corp | 光記録媒体用基板と光記録媒体 |
JP2641351B2 (ja) * | 1990-08-23 | 1997-08-13 | アプライド マテリアルズ インコーポレイテッド | 可変分配率ガス流反応室 |
US5269847A (en) * | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
US6057250A (en) * | 1998-01-27 | 2000-05-02 | International Business Machines Corporation | Low temperature reflow dielectric-fluorinated BPSG |
CN1301537C (zh) * | 1999-04-16 | 2007-02-21 | 国际商业机器公司 | 制作掺氟的硼磷硅玻璃的方法 |
KR100624030B1 (ko) * | 1999-06-19 | 2006-09-19 | 에이에스엠지니텍코리아 주식회사 | 화학 증착 반응기 및 이를 이용한 박막 형성 방법 |
US6527866B1 (en) * | 2000-02-09 | 2003-03-04 | Conductus, Inc. | Apparatus and method for deposition of thin films |
US8298338B2 (en) | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
DE102009043848A1 (de) | 2009-08-25 | 2011-03-03 | Aixtron Ag | CVD-Verfahren und CVD-Reaktor |
JP6362488B2 (ja) * | 2014-09-09 | 2018-07-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4930319B1 (de) * | 1969-08-29 | 1974-08-12 | ||
US3652444A (en) * | 1969-10-24 | 1972-03-28 | Ibm | Continuous vacuum process apparatus |
US3696779A (en) * | 1969-12-29 | 1972-10-10 | Kokusai Electric Co Ltd | Vapor growth device |
US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
GB1524326A (en) * | 1976-04-13 | 1978-09-13 | Bfg Glassgroup | Coating of glass |
FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
GB8421162D0 (en) * | 1984-08-21 | 1984-09-26 | British Telecomm | Growth of semi-conductors |
-
1988
- 1988-12-21 EP EP89905370A patent/EP0449821B1/de not_active Expired - Lifetime
- 1988-12-21 DE DE3889735T patent/DE3889735T2/de not_active Expired - Fee Related
- 1988-12-21 WO PCT/US1988/004590 patent/WO1990007019A1/en active IP Right Grant
- 1988-12-21 JP JP89505198A patent/JPH04504442A/ja active Pending
-
1990
- 1990-08-23 KR KR90701876A patent/KR960015377B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0449821A4 (en) | 1992-01-08 |
JPH04504442A (ja) | 1992-08-06 |
WO1990007019A1 (en) | 1990-06-28 |
EP0449821B1 (de) | 1994-05-25 |
DE3889735T2 (de) | 1994-09-08 |
KR960015377B1 (en) | 1996-11-11 |
KR910700360A (ko) | 1991-03-14 |
EP0449821A1 (de) | 1991-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: LAM RESEARCH CORP., FREMONT, CALIF., US |
|
8339 | Ceased/non-payment of the annual fee |