DE3880709D1 - Verfahren zum herstellen von metallisierten kontaktloechern unterschiedlicher hoehe. - Google Patents
Verfahren zum herstellen von metallisierten kontaktloechern unterschiedlicher hoehe.Info
- Publication number
- DE3880709D1 DE3880709D1 DE8888420017T DE3880709T DE3880709D1 DE 3880709 D1 DE3880709 D1 DE 3880709D1 DE 8888420017 T DE8888420017 T DE 8888420017T DE 3880709 T DE3880709 T DE 3880709T DE 3880709 D1 DE3880709 D1 DE 3880709D1
- Authority
- DE
- Germany
- Prior art keywords
- contact holes
- different heights
- metallized contact
- producing metallized
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8701095A FR2610142B1 (fr) | 1987-01-23 | 1987-01-23 | Procede de formation de trous de passage metallises de hauteurs inegales |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3880709D1 true DE3880709D1 (de) | 1993-06-09 |
DE3880709T2 DE3880709T2 (de) | 1993-12-16 |
Family
ID=9347408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19883880709 Expired - Fee Related DE3880709T2 (de) | 1987-01-23 | 1988-01-21 | Verfahren zum Herstellen von metallisierten Kontaktlöchern unterschiedlicher Höhe. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0279752B1 (de) |
DE (1) | DE3880709T2 (de) |
FR (1) | FR2610142B1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4943539A (en) * | 1989-05-09 | 1990-07-24 | Motorola, Inc. | Process for making a multilayer metallization structure |
US5169802A (en) * | 1991-06-17 | 1992-12-08 | Hewlett-Packard Company | Internal bridging contact |
US6077781A (en) * | 1995-11-21 | 2000-06-20 | Applied Materials, Inc. | Single step process for blanket-selective CVD aluminum deposition |
US6207558B1 (en) | 1999-10-21 | 2001-03-27 | Applied Materials, Inc. | Barrier applications for aluminum planarization |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
-
1987
- 1987-01-23 FR FR8701095A patent/FR2610142B1/fr not_active Expired
-
1988
- 1988-01-21 DE DE19883880709 patent/DE3880709T2/de not_active Expired - Fee Related
- 1988-01-21 EP EP19880420017 patent/EP0279752B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0279752A1 (de) | 1988-08-24 |
FR2610142B1 (fr) | 1989-05-26 |
DE3880709T2 (de) | 1993-12-16 |
EP0279752B1 (de) | 1993-05-05 |
FR2610142A1 (fr) | 1988-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Free format text: LAMI, PHILIPPE, MEYLAN, FR ROMAGNA, FRANCOISE, BRIGNOUD, FR |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |