DE3880709D1 - Verfahren zum herstellen von metallisierten kontaktloechern unterschiedlicher hoehe. - Google Patents

Verfahren zum herstellen von metallisierten kontaktloechern unterschiedlicher hoehe.

Info

Publication number
DE3880709D1
DE3880709D1 DE8888420017T DE3880709T DE3880709D1 DE 3880709 D1 DE3880709 D1 DE 3880709D1 DE 8888420017 T DE8888420017 T DE 8888420017T DE 3880709 T DE3880709 T DE 3880709T DE 3880709 D1 DE3880709 D1 DE 3880709D1
Authority
DE
Germany
Prior art keywords
contact holes
different heights
metallized contact
producing metallized
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888420017T
Other languages
English (en)
Other versions
DE3880709T2 (de
Inventor
Philippe Lami
Francoise Romagna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Publication of DE3880709D1 publication Critical patent/DE3880709D1/de
Application granted granted Critical
Publication of DE3880709T2 publication Critical patent/DE3880709T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19883880709 1987-01-23 1988-01-21 Verfahren zum Herstellen von metallisierten Kontaktlöchern unterschiedlicher Höhe. Expired - Fee Related DE3880709T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8701095A FR2610142B1 (fr) 1987-01-23 1987-01-23 Procede de formation de trous de passage metallises de hauteurs inegales

Publications (2)

Publication Number Publication Date
DE3880709D1 true DE3880709D1 (de) 1993-06-09
DE3880709T2 DE3880709T2 (de) 1993-12-16

Family

ID=9347408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883880709 Expired - Fee Related DE3880709T2 (de) 1987-01-23 1988-01-21 Verfahren zum Herstellen von metallisierten Kontaktlöchern unterschiedlicher Höhe.

Country Status (3)

Country Link
EP (1) EP0279752B1 (de)
DE (1) DE3880709T2 (de)
FR (1) FR2610142B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943539A (en) * 1989-05-09 1990-07-24 Motorola, Inc. Process for making a multilayer metallization structure
US5169802A (en) * 1991-06-17 1992-12-08 Hewlett-Packard Company Internal bridging contact
US6077781A (en) * 1995-11-21 2000-06-20 Applied Materials, Inc. Single step process for blanket-selective CVD aluminum deposition
US6207558B1 (en) 1999-10-21 2001-03-27 Applied Materials, Inc. Barrier applications for aluminum planarization

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate

Also Published As

Publication number Publication date
EP0279752A1 (de) 1988-08-24
FR2610142B1 (fr) 1989-05-26
DE3880709T2 (de) 1993-12-16
EP0279752B1 (de) 1993-05-05
FR2610142A1 (fr) 1988-07-29

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Free format text: LAMI, PHILIPPE, MEYLAN, FR ROMAGNA, FRANCOISE, BRIGNOUD, FR

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee