DE3878884D1 - Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist. - Google Patents

Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist.

Info

Publication number
DE3878884D1
DE3878884D1 DE8888121155T DE3878884T DE3878884D1 DE 3878884 D1 DE3878884 D1 DE 3878884D1 DE 8888121155 T DE8888121155 T DE 8888121155T DE 3878884 T DE3878884 T DE 3878884T DE 3878884 D1 DE3878884 D1 DE 3878884D1
Authority
DE
Germany
Prior art keywords
josephson
facilities
constructed
oxide super
transitional structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888121155T
Other languages
English (en)
Other versions
DE3878884T2 (de
Inventor
Yoshifusa Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3878884D1 publication Critical patent/DE3878884D1/de
Application granted granted Critical
Publication of DE3878884T2 publication Critical patent/DE3878884T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE8888121155T 1987-12-18 1988-12-16 Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist. Expired - Fee Related DE3878884T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62320516A JPH01161881A (ja) 1987-12-18 1987-12-18 ジョセフソン素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE3878884D1 true DE3878884D1 (de) 1993-04-08
DE3878884T2 DE3878884T2 (de) 1993-06-17

Family

ID=18122318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888121155T Expired - Fee Related DE3878884T2 (de) 1987-12-18 1988-12-16 Josephson-einrichtung, bestehend aus einer josephson-uebergangsstruktur, welche fuer einen oxidsupraleiter geeignet ist.

Country Status (3)

Country Link
EP (1) EP0325765B1 (de)
JP (1) JPH01161881A (de)
DE (1) DE3878884T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162298A (en) * 1988-02-16 1992-11-10 International Business Machines Corporation Grain boundary junction devices using high tc superconductors
JPH01217980A (ja) * 1988-02-26 1989-08-31 Nippon Cement Co Ltd ブリッジ型粒界ジョセフソン素子
US5077266A (en) * 1988-09-14 1991-12-31 Hitachi, Ltd. Method of forming weak-link josephson junction, and superconducting device employing the junction
US5256897A (en) * 1988-11-28 1993-10-26 Hitachi, Ltd. Oxide superconducting device
JP3020524B2 (ja) * 1988-11-28 2000-03-15 株式会社日立製作所 酸化物超電導素子
EP0372951B1 (de) * 1988-12-09 1996-08-14 Canon Kabushiki Kaisha Supraleitender elektromagnetischer Wellenmischer und diesen enthaltendes Gerät
US5134117A (en) * 1991-01-22 1992-07-28 Biomagnetic Technologies, Inc. High tc microbridge superconductor device utilizing stepped edge-to-edge sns junction
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films
US5376624A (en) * 1991-10-10 1994-12-27 The United States Of America As Represented By The Secretary Of The Navy Josephson break junction thin film device
JPH05148095A (ja) * 1991-11-30 1993-06-15 Sumitomo Electric Ind Ltd 基板成膜面に段差を形成する方法
JP3149996B2 (ja) * 1992-11-10 2001-03-26 財団法人国際超電導産業技術研究センター ジョセフソン結合の作製法
DE4323040A1 (de) * 1993-07-09 1995-01-12 Siemens Ag Josephson-Sensoreinrichtung mit supraleitenden Teilen aus metalloxidischem Supraleitermaterial
JP2963614B2 (ja) * 1994-04-01 1999-10-18 財団法人国際超電導産業技術研究センター 酸化物超電導体接合素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290843A (en) * 1980-02-19 1981-09-22 Texas Instruments Incorporated Epitaxial growth of magnetic memory film on implanted substrate

Also Published As

Publication number Publication date
JPH01161881A (ja) 1989-06-26
JPH0577347B2 (de) 1993-10-26
DE3878884T2 (de) 1993-06-17
EP0325765B1 (de) 1993-03-03
EP0325765A1 (de) 1989-08-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee