DE3878110D1 - Zusammengesetztes magnetisches material und verfahren zu seiner herstellung. - Google Patents
Zusammengesetztes magnetisches material und verfahren zu seiner herstellung.Info
- Publication number
- DE3878110D1 DE3878110D1 DE8888402329T DE3878110T DE3878110D1 DE 3878110 D1 DE3878110 D1 DE 3878110D1 DE 8888402329 T DE8888402329 T DE 8888402329T DE 3878110 T DE3878110 T DE 3878110T DE 3878110 D1 DE3878110 D1 DE 3878110D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- magnetic material
- composed magnetic
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1157—Substrate composition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Thin Magnetic Films (AREA)
- Soft Magnetic Materials (AREA)
- Laminated Bodies (AREA)
- Aerials With Secondary Devices (AREA)
- Hard Magnetic Materials (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8712971A FR2620853B1 (fr) | 1987-09-18 | 1987-09-18 | Materiau magnetique composite et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3878110D1 true DE3878110D1 (de) | 1993-03-18 |
DE3878110T2 DE3878110T2 (de) | 1993-07-22 |
Family
ID=9355049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888402329T Expired - Fee Related DE3878110T2 (de) | 1987-09-18 | 1988-09-15 | Zusammengesetztes magnetisches material und verfahren zu seiner herstellung. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5047296A (de) |
EP (1) | EP0308334B1 (de) |
JP (1) | JPH01106499A (de) |
CA (1) | CA1294677C (de) |
DE (1) | DE3878110T2 (de) |
FR (1) | FR2620853B1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2658530B2 (fr) * | 1988-01-18 | 1992-06-12 | Commissariat Energie Atomique | Enduit absorbant, son procede de fabrication et revetement obtenu a l'aide de cet enduit. |
FR2655997B1 (fr) * | 1988-01-18 | 1992-04-30 | Commissariat Energie Atomique | Enduit absorbant, son procede de fabrication et revetement obtenu a l'aide de cet enduit. |
FR2655180B1 (fr) * | 1989-11-28 | 1992-02-07 | Commissariat Energie Atomique | Materiau magnetique composite en feuilles et son procede de fabrication. |
US5169713A (en) * | 1990-02-22 | 1992-12-08 | Commissariat A L'energie Atomique | High frequency electromagnetic radiation absorbent coating comprising a binder and chips obtained from a laminate of alternating amorphous magnetic films and electrically insulating |
JPH04316996A (ja) * | 1991-04-16 | 1992-11-09 | Mitsubishi Heavy Ind Ltd | 航空機等のレーダ反射低減装置 |
KR930011548B1 (ko) * | 1991-08-13 | 1993-12-10 | 한국과학기술연구원 | 적층형 전파흡수체 |
FR2698479B1 (fr) * | 1992-11-25 | 1994-12-23 | Commissariat Energie Atomique | Composite hyperfréquence anisotrope. |
US5563616A (en) * | 1994-03-18 | 1996-10-08 | California Microwave | Antenna design using a high index, low loss material |
DE69820524T2 (de) * | 1997-05-09 | 2004-09-23 | Kabushiki Kaisha Toshiba, Kawasaki | Magnetisches Element und Magnetkopf oder Speicherelement die dieses Element verwenden |
US5922514A (en) * | 1997-09-17 | 1999-07-13 | Dale Electronics, Inc. | Thick film low value high frequency inductor, and method of making the same |
FR2769122B1 (fr) * | 1997-09-29 | 2001-04-13 | Commissariat Energie Atomique | Procede pour augmenter la frequence de fonctionnement d'un circuit magnetique et circuit magnetique correspondant |
US6225939B1 (en) * | 1999-01-22 | 2001-05-01 | Mcdonnell Douglas Corporation | Impedance sheet device |
US6482330B1 (en) * | 1999-10-01 | 2002-11-19 | Komag, Inc. | Method for manufacturing a data storage card |
US6856228B2 (en) * | 1999-11-23 | 2005-02-15 | Intel Corporation | Integrated inductor |
US6891461B2 (en) * | 1999-11-23 | 2005-05-10 | Intel Corporation | Integrated transformer |
US6870456B2 (en) * | 1999-11-23 | 2005-03-22 | Intel Corporation | Integrated transformer |
US6815220B2 (en) | 1999-11-23 | 2004-11-09 | Intel Corporation | Magnetic layer processing |
US6452247B1 (en) * | 1999-11-23 | 2002-09-17 | Intel Corporation | Inductor for integrated circuit |
US7852185B2 (en) * | 2003-05-05 | 2010-12-14 | Intel Corporation | On-die micro-transformer structures with magnetic materials |
GB2404087A (en) * | 2003-07-18 | 2005-01-19 | Qinetiq Ltd | Electromagnetic radiation absorber |
US8134548B2 (en) * | 2005-06-30 | 2012-03-13 | Micron Technology, Inc. | DC-DC converter switching transistor current measurement technique |
US8013775B2 (en) * | 2007-04-30 | 2011-09-06 | Viasat, Inc. | Radio frequency absorber |
JP5248678B2 (ja) * | 2008-07-18 | 2013-07-31 | イーエムダブリュ カンパニー リミテッド | 誘電体および磁性体の垂直周期構造を有する複合構造体を用いたアンテナ |
RU2013121424A (ru) * | 2010-11-18 | 2014-12-27 | 3М Инновейтив Пропертиз Компани | Изолятор электромагнитных волн |
US11362431B1 (en) * | 2015-06-16 | 2022-06-14 | Oceanit Laboratories, Inc. | Optically transparent radar absorbing material (RAM) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3343145A (en) * | 1962-12-24 | 1967-09-19 | Ibm | Diffused thin film memory device |
US3524173A (en) * | 1967-05-22 | 1970-08-11 | Ampex | Process for electrodeposition of anisotropic magnetic films and a product formed by the process |
US3540047A (en) * | 1968-07-15 | 1970-11-10 | Conductron Corp | Thin film magnetodielectric materials |
US4174419A (en) * | 1978-11-08 | 1979-11-13 | Allied Chemical Corporation | Stabilized magnetic shields |
US4608297A (en) * | 1982-04-21 | 1986-08-26 | Showa Denka Kabushiki Kaisha | Multilayer composite soft magnetic material comprising amorphous and insulating layers and a method for manufacturing the core of a magnetic head and a reactor |
JPH0777008B2 (ja) * | 1985-06-21 | 1995-08-16 | 株式会社日立製作所 | 非晶質合金膜を用いた磁気ヘツド |
JPS63304416A (ja) * | 1987-06-05 | 1988-12-12 | Hitachi Ltd | 磁気抵抗効果型再生ヘツド |
-
1987
- 1987-09-18 FR FR8712971A patent/FR2620853B1/fr not_active Expired
-
1988
- 1988-09-08 US US07/241,584 patent/US5047296A/en not_active Expired - Fee Related
- 1988-09-15 DE DE8888402329T patent/DE3878110T2/de not_active Expired - Fee Related
- 1988-09-15 EP EP88402329A patent/EP0308334B1/de not_active Expired - Lifetime
- 1988-09-15 CA CA000577532A patent/CA1294677C/en not_active Expired - Lifetime
- 1988-09-19 JP JP63232735A patent/JPH01106499A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5047296A (en) | 1991-09-10 |
FR2620853A1 (fr) | 1989-03-24 |
EP0308334B1 (de) | 1993-02-03 |
DE3878110T2 (de) | 1993-07-22 |
EP0308334A1 (de) | 1989-03-22 |
FR2620853B1 (fr) | 1989-12-01 |
JPH01106499A (ja) | 1989-04-24 |
CA1294677C (en) | 1992-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |