DE3865485D1 - Allyltelluride und ihre verwendung zum epitaxialwachstum von filmen der gruppe ii-vi durch mocvd. - Google Patents

Allyltelluride und ihre verwendung zum epitaxialwachstum von filmen der gruppe ii-vi durch mocvd.

Info

Publication number
DE3865485D1
DE3865485D1 DE8888103673T DE3865485T DE3865485D1 DE 3865485 D1 DE3865485 D1 DE 3865485D1 DE 8888103673 T DE8888103673 T DE 8888103673T DE 3865485 T DE3865485 T DE 3865485T DE 3865485 D1 DE3865485 D1 DE 3865485D1
Authority
DE
Germany
Prior art keywords
tellurides
mocvd
allyl
films
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888103673T
Other languages
English (en)
Inventor
Valentine, Jr
Duncan William Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wyeth Holdings LLC
Original Assignee
American Cyanamid Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Cyanamid Co filed Critical American Cyanamid Co
Application granted granted Critical
Publication of DE3865485D1 publication Critical patent/DE3865485D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C395/00Compounds containing tellurium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE8888103673T 1987-04-07 1988-03-09 Allyltelluride und ihre verwendung zum epitaxialwachstum von filmen der gruppe ii-vi durch mocvd. Expired - Fee Related DE3865485D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3532987A 1987-04-07 1987-04-07

Publications (1)

Publication Number Publication Date
DE3865485D1 true DE3865485D1 (de) 1991-11-21

Family

ID=21881989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888103673T Expired - Fee Related DE3865485D1 (de) 1987-04-07 1988-03-09 Allyltelluride und ihre verwendung zum epitaxialwachstum von filmen der gruppe ii-vi durch mocvd.

Country Status (10)

Country Link
EP (1) EP0285834B1 (de)
JP (1) JPS63283032A (de)
KR (1) KR880012539A (de)
DE (1) DE3865485D1 (de)
HK (1) HK65992A (de)
IE (1) IE61292B1 (de)
IL (1) IL85733A (de)
MX (1) MX169875B (de)
MY (1) MY103899A (de)
SG (1) SG45392G (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124481A (en) * 1987-07-13 1992-06-23 The United States Of America As Represented By The Secretary Of The Navy Synthesis of unsymmetric allyl-(alkyl) tellurides
GB8913799D0 (en) * 1989-06-15 1989-08-02 Secr Defence Method for preparation of organotellurium and selenium compounds
US5041650A (en) * 1989-11-20 1991-08-20 Walter Rosenthal Allyl selenide, and method for making and using
GB9921639D0 (en) * 1999-09-15 1999-11-17 Secr Defence Brit New organotellurium compound and new method for synthesising organotellurium compounds

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3168017D1 (en) * 1980-05-27 1985-02-14 Secr Defence Brit Manufacture of cadmium mercury telluride

Also Published As

Publication number Publication date
EP0285834B1 (de) 1991-10-16
IL85733A0 (en) 1988-08-31
EP0285834A1 (de) 1988-10-12
SG45392G (en) 1992-06-12
MY103899A (en) 1993-10-30
HK65992A (en) 1992-09-11
MX169875B (es) 1993-07-29
IL85733A (en) 1992-02-16
IE881006L (en) 1988-10-07
KR880012539A (ko) 1988-11-28
JPS63283032A (ja) 1988-11-18
IE61292B1 (en) 1994-10-19

Similar Documents

Publication Publication Date Title
DE3850843T2 (de) Verfahren zur Herstellung von epitaxial abgelagertem fehlerfreien Silizium.
DE3485108D1 (de) Verfahren zum verbessern des wachstums von pflanzen.
DE3480721D1 (de) Verfahren und vorrichtung zur herstellung von einkristallen.
DE3575136D1 (de) Cyclohexenonderivate, verfahren zu ihrer herstellung und ihre verwendung zur bekaempfung unerwuenschten pflanzenwuchses.
DE3874219T2 (de) Vorrichtung zur zuechtung von kristallen aus halbleitermaterialien.
DE3484090D1 (de) Verfahren zur herstellung von thermostabilen alpha-amylasen durch zuechtung von mikroorganismen bei erhoehten temperaturen.
DE3683547D1 (de) Galliumarsenideinkristalle und verfahren zu ihrer herstellung.
DE3675016D1 (de) Verfahren zur fluoreszenzverbesserung von ti:al2o3 laserkristallen durch kontrolle von kristallzuechtung-atmosphaeren.
DE3865485D1 (de) Allyltelluride und ihre verwendung zum epitaxialwachstum von filmen der gruppe ii-vi durch mocvd.
DE3172935D1 (en) Iii - v group compound semiconductor light-emitting element and method of producing the same
IT8521977A0 (it) Apparecchiatura per la crescita di monocristalli.
DE3881064T2 (de) Verfahren zur Herstellung von kristallinen komplexen Perovskit-Verbindungen.
DE3482122D1 (de) Additive zur regelung des niederschlags von quaternaeren.
DE3686612T2 (de) Verfahren zur herstellung von einkristallen aus kalziumkarbonat.
DE3482971D1 (de) Landwirtschaftliche zusammensetzungen, verfahren zur herstellung von landwirtschaftlichen zusammensetzungen und verfahren zur verwendung von landwirtschaftlichen zusammensetzungen.
DE3680467D1 (de) Verfahren zur unkrautbekaempfung durch verwendung von diflufenican.
DE3785638D1 (de) Verfahren zur zuechtung von kristallen aus halbleiterverbindungen.
DE3481324D1 (de) Vorrichtung zur herstellung von einkristallinem galliumarsenid und einkristallines galliumarsenid hergestellt durch diese vorrichtung.
DE3581238D1 (de) Mikrobiologische herstellung von l-phenylalanin.
ATE9337T1 (de) N-substituierte 2-methylnaphthylamide, verfahren zu ihrer herstellung und ihre verwendung zur bekaempfung von pilzen.
DE68901943T2 (de) Verfahren zur dotierung von zink-selenid-einkristall.
DE3574938D1 (de) Tensidzusammensetzung und verfahren zur oelfoerderung unter verwendung dieser zusammensetzung.
ATA58885A (de) Aktivator von peroxoverbindungen, verfahren zu seiner herstellung und seine verwendung
DE3779008D1 (de) Kristalline, komplexe verbindungen von propargylalkoholen und tertiaeren diaminen und verfahren zur trennung und reinigung von propargylalkoholen unter verwendung dieser verbindungen.
DE68902668D1 (de) Verfahren zur thermischen behandlung von galliumarsenid-einkristallen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee