DE3855245T2 - Supraleiter-Bauelement - Google Patents

Supraleiter-Bauelement

Info

Publication number
DE3855245T2
DE3855245T2 DE3855245T DE3855245T DE3855245T2 DE 3855245 T2 DE3855245 T2 DE 3855245T2 DE 3855245 T DE3855245 T DE 3855245T DE 3855245 T DE3855245 T DE 3855245T DE 3855245 T2 DE3855245 T2 DE 3855245T2
Authority
DE
Germany
Prior art keywords
superconductor device
superconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855245T
Other languages
English (en)
Other versions
DE3855245D1 (de
Inventor
Toshikazu Nishino
Ushio Kawabe
Yoshinobu Tarutani
Shinya Kominami
Toshiyuki Aida
Tokuumi Fukazawa
Mutsuko Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3855245D1 publication Critical patent/DE3855245D1/de
Application granted granted Critical
Publication of DE3855245T2 publication Critical patent/DE3855245T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE3855245T 1987-02-27 1988-02-25 Supraleiter-Bauelement Expired - Fee Related DE3855245T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4255887 1987-02-27
JP14704387 1987-06-15
JP15959687 1987-06-29

Publications (2)

Publication Number Publication Date
DE3855245D1 DE3855245D1 (de) 1996-06-05
DE3855245T2 true DE3855245T2 (de) 1996-12-05

Family

ID=27291262

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3855245T Expired - Fee Related DE3855245T2 (de) 1987-02-27 1988-02-25 Supraleiter-Bauelement
DE3856452T Expired - Fee Related DE3856452T2 (de) 1987-02-27 1988-02-25 Herstellungsmethode für ein supraleitendes Bauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3856452T Expired - Fee Related DE3856452T2 (de) 1987-02-27 1988-02-25 Herstellungsmethode für ein supraleitendes Bauelement

Country Status (6)

Country Link
US (5) US5126315A (de)
EP (2) EP0673073B1 (de)
JP (3) JP2907832B2 (de)
KR (1) KR910002311B1 (de)
CN (1) CN1007480B (de)
DE (2) DE3855245T2 (de)

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KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
US5026682A (en) * 1987-04-13 1991-06-25 International Business Machines Corporation Devices using high Tc superconductors
US5221660A (en) * 1987-12-25 1993-06-22 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film
DE3822905A1 (de) * 1988-07-06 1990-01-11 Siemens Ag Josephson-tunnelelement mi metalloxidischem supraleitermaterial und verfahren zur herstellung des elements
US5523282A (en) 1988-08-18 1996-06-04 Trw Inc. High-frequency substrate material for thin-film layered perovskite superconductors
JPH0783146B2 (ja) * 1989-05-08 1995-09-06 株式会社日立製作所 酸化物超電導トランジスタ装置の製造方法
JP2682136B2 (ja) * 1989-05-12 1997-11-26 松下電器産業株式会社 ジョセフソン素子の製造方法
EP0619283A3 (de) * 1989-06-30 1994-11-30 Sumitomo Electric Industries Substrat mit einer supraleitenden Schicht.
JPH0793461B2 (ja) * 1989-07-10 1995-10-09 株式会社日立製作所 電界効果型超電導トランジスタ装置の製造方法
JPH03150879A (ja) * 1989-11-08 1991-06-27 Hitachi Ltd 超電導スイッチ素子
FR2656956B1 (fr) * 1990-01-05 1997-01-24 Centre Nat Rech Scient Element de circuit electrique en materiau supraconducteur de type 2.
US5380704A (en) * 1990-02-02 1995-01-10 Hitachi, Ltd. Superconducting field effect transistor with increased channel length
US5101243A (en) * 1990-05-21 1992-03-31 International Business Machines Corporation Superconducting device structures employing anisotropy of the material energy gap
JPH05894A (ja) * 1990-06-28 1993-01-08 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜
EP0467777B1 (de) * 1990-07-16 1997-04-02 Sumitomo Electric Industries, Ltd. Verfahren zum Herstellen einer supraleitenden Einrichtung aus supraleitendem Material und dadurch hergestellte supraleitende Einrichtung
EP0477063B1 (de) * 1990-09-06 1996-12-04 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement mit verringerter Dicke der supraleitenden Oxydschicht und dessen Herstellungsverfahren
EP0475838B1 (de) * 1990-09-10 1996-03-06 Sumitomo Electric Industries, Ltd. Supraleitende Einrichtung mit einer reduzierten Dicke der supraleitenden Schicht und Methode zu deren Herstellung
CA2052379C (en) * 1990-09-27 1997-01-07 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
EP0478466B1 (de) * 1990-09-27 1995-11-08 Sumitomo Electric Industries, Ltd. Supraleitendes Bauelement und dessen Herstellungsverfahren
EP0478464B1 (de) * 1990-09-27 1997-08-27 Sumitomo Electric Industries, Ltd. Herstellungsverfahren eines supraleitenden Bauelements mit extrem dünnem supraleitenden Kanal aus supraleitendem Oxidmaterial
DE69115209T2 (de) * 1990-09-28 1996-08-08 Sumitomo Electric Industries Verfahren zur Herstellung eines Supraleitungsbauelements mit reduzierter Dicke der supraleitenden Oxidschicht und dadurch hergestelltes Supraleitungsbauelement.
CA2052970C (en) * 1990-10-08 1996-07-02 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
CA2054644C (en) * 1990-10-31 1998-03-31 Takao Nakamura Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film and method for manufacturing same
CA2054796C (en) * 1990-11-01 1999-01-19 Hiroshi Inada Superconducting wiring lines and process for fabricating the same
JP3092160B2 (ja) * 1990-11-30 2000-09-25 ソニー株式会社 高速素子及び高速メモリ素子
DE69132972T2 (de) * 1991-01-07 2003-03-13 Ibm Supraleitender Feldeffekttransistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung
DE59203408D1 (de) * 1991-01-21 1995-10-05 Siemens Ag Verfahren zur Herstellung eines strukturierten Aufbaus mit Hochtemperatursupraleitermaterial.
EP0684654A1 (de) * 1991-03-04 1995-11-29 Sumitomo Electric Industries, Limited Supraleitende oxydische Dünschicht mit lokal unterschiedlichen Kristallorientierungen und Verfahren zu ihrer Herstellung
CA2077047C (en) * 1991-08-28 1998-02-10 So Tanaka Method for manufacturing superconducting thin film formed of oxide superconductor having non superconducting region in it, method for manufacturing superconducting device utilizing the superconducting thin film and superconducting thin film manufactured thereby
EP0533568A1 (de) * 1991-09-17 1993-03-24 Sumitomo Electric Industries, Ltd. Supraleitende dünne Schicht, hergestellt aus supraleitendem Oxyd, Bauelement und Herstellungsverfahren
JP3446204B2 (ja) * 1991-11-13 2003-09-16 セイコーエプソン株式会社 超伝導素子
CA2084174C (en) * 1991-11-30 1997-07-29 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame
CA2084983C (en) * 1991-12-10 1996-11-12 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
CA2085172C (en) * 1991-12-12 1996-07-23 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
US5274249A (en) * 1991-12-20 1993-12-28 University Of Maryland Superconducting field effect devices with thin channel layer
US5252551A (en) * 1991-12-27 1993-10-12 The United States Of America As Represented By The Department Of Energy Superconducting composite with multilayer patterns and multiple buffer layers
DE4320484A1 (de) * 1993-06-21 1994-12-22 Dornier Gmbh Steuerbares Supraleiter-Bauelement
JPH0745880A (ja) * 1993-07-29 1995-02-14 Sumitomo Electric Ind Ltd 絶縁体薄膜と酸化物超電導薄膜との積層膜
US6610633B1 (en) 1995-05-04 2003-08-26 Trw Inc. Superconductor device
DE19634463A1 (de) * 1996-08-27 1998-03-05 Forschungszentrum Juelich Gmbh Schichtenfolge sowie eine solche enthaltendes Bauelement
DE19634645C2 (de) * 1996-08-27 1999-11-11 Forschungszentrum Juelich Gmbh Schichtenfolge mit einem hochtemperatursupraleitenden Material und deren Verwendung
US6239431B1 (en) 1998-11-24 2001-05-29 The United States Of America As Represented By The Secretary Of Commerce Superconducting transition-edge sensor with weak links
WO2002045133A2 (en) * 2000-10-23 2002-06-06 The Trustees Of Columbia University In The City Of New York Thick film high temperature superconducting device supporting high critical currents and method for fabricating same
CN1241208C (zh) * 2001-01-16 2006-02-08 新日本制铁株式会社 低电阻导体及其制造方法和使用其的电子部件
US6787798B1 (en) * 2001-01-17 2004-09-07 The Texas A&M University System Method and system for storing information using nano-pinned dipole magnetic vortices in superconducting materials
JP3511098B2 (ja) * 2001-09-14 2004-03-29 独立行政法人産業技術総合研究所 超高速光電気信号変換素子
US6635368B1 (en) 2001-12-20 2003-10-21 The United States Of America As Represented By The Secretary Of The Navy HTS film-based electronic device characterized by low ELF and white noise
US20040074533A1 (en) * 2002-10-21 2004-04-22 Hongjun Pan Superconductor-semiconductor solar cells and light detectors
FI20080124L (fi) * 2008-02-15 2009-08-16 Teknillinen Korkeakoulu Läheis-Josephson-ilmaisin
US8674302B2 (en) * 2009-06-01 2014-03-18 The United States Of America As Represented By The Administrator Of The National Aeronautics Space Administration Superconducting transition edge sensors and methods for design and manufacture thereof
US8644898B1 (en) * 2012-05-01 2014-02-04 The United States Of America As Represented By The Secretary Of The Navy Superconductor device having a pattern of engineered defects for controlling magnetic flux
FR3011389B1 (fr) * 2013-10-01 2015-10-30 Thales Sa Procede de fabrication d'une jonction josephson et jonction josepson associee
EP3684463A4 (de) 2017-09-19 2021-06-23 Neuroenhancement Lab, LLC Verfahren und vorrichtung für neuro-enhancement
US11717686B2 (en) 2017-12-04 2023-08-08 Neuroenhancement Lab, LLC Method and apparatus for neuroenhancement to facilitate learning and performance
CN108083799A (zh) * 2017-12-21 2018-05-29 叶芳 一种新能源用超导材料及其制备方法
US11273283B2 (en) 2017-12-31 2022-03-15 Neuroenhancement Lab, LLC Method and apparatus for neuroenhancement to enhance emotional response
US11364361B2 (en) 2018-04-20 2022-06-21 Neuroenhancement Lab, LLC System and method for inducing sleep by transplanting mental states
US11452839B2 (en) 2018-09-14 2022-09-27 Neuroenhancement Lab, LLC System and method of improving sleep
US11786694B2 (en) 2019-05-24 2023-10-17 NeuroLight, Inc. Device, method, and app for facilitating sleep
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device

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KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
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Also Published As

Publication number Publication date
JP3275836B2 (ja) 2002-04-22
JPS6486574A (en) 1989-03-31
DE3856452T2 (de) 2001-08-23
JPH1131852A (ja) 1999-02-02
US5729046A (en) 1998-03-17
DE3855245D1 (de) 1996-06-05
EP0280308B1 (de) 1996-05-01
KR910002311B1 (ko) 1991-04-11
JP2907832B2 (ja) 1999-06-21
CN1007480B (zh) 1990-04-04
US5326745A (en) 1994-07-05
JP3221403B2 (ja) 2001-10-22
EP0673073B1 (de) 2001-01-10
US6069369A (en) 2000-05-30
JPH1131851A (ja) 1999-02-02
KR890001210A (ko) 1989-03-18
US5126315A (en) 1992-06-30
DE3856452D1 (de) 2001-02-15
EP0280308A3 (en) 1990-12-12
CN88101032A (zh) 1988-09-21
EP0280308A2 (de) 1988-08-31
EP0673073A1 (de) 1995-09-20
US5552375A (en) 1996-09-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee