DE3787010D1 - FIELD EFFECT TRANSISTOR WITH HETEROUZITION. - Google Patents

FIELD EFFECT TRANSISTOR WITH HETEROUZITION.

Info

Publication number
DE3787010D1
DE3787010D1 DE8787119142T DE3787010T DE3787010D1 DE 3787010 D1 DE3787010 D1 DE 3787010D1 DE 8787119142 T DE8787119142 T DE 8787119142T DE 3787010 T DE3787010 T DE 3787010T DE 3787010 D1 DE3787010 D1 DE 3787010D1
Authority
DE
Germany
Prior art keywords
heterouzition
field effect
effect transistor
transistor
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787119142T
Other languages
German (de)
Other versions
DE3787010T2 (en
Inventor
Paul M Solomon
Thomas N Theis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE3787010D1 publication Critical patent/DE3787010D1/en
Application granted granted Critical
Publication of DE3787010T2 publication Critical patent/DE3787010T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE19873787010 1987-02-06 1987-12-23 Field effect transistor with heterojunction. Expired - Fee Related DE3787010T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1179987A 1987-02-06 1987-02-06

Publications (2)

Publication Number Publication Date
DE3787010D1 true DE3787010D1 (en) 1993-09-16
DE3787010T2 DE3787010T2 (en) 1994-03-17

Family

ID=21752011

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873787010 Expired - Fee Related DE3787010T2 (en) 1987-02-06 1987-12-23 Field effect transistor with heterojunction.

Country Status (3)

Country Link
EP (1) EP0278110B1 (en)
JP (1) JPS63196079A (en)
DE (1) DE3787010T2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928383A (en) * 1982-08-10 1984-02-15 Nec Corp Semiconductor device
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
JPS60167417A (en) * 1984-02-10 1985-08-30 Hitachi Ltd Manufacture of semiconductor device
JPS60218876A (en) * 1984-04-16 1985-11-01 Toshiba Corp Manufacture of field effect transistor
JPS60263475A (en) * 1984-06-12 1985-12-26 Sony Corp Semiconductor device
US4729000A (en) * 1985-06-21 1988-03-01 Honeywell Inc. Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates

Also Published As

Publication number Publication date
EP0278110A1 (en) 1988-08-17
JPS63196079A (en) 1988-08-15
DE3787010T2 (en) 1994-03-17
EP0278110B1 (en) 1993-08-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee