DE3772659D1 - Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. - Google Patents

Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.

Info

Publication number
DE3772659D1
DE3772659D1 DE8787420180T DE3772659T DE3772659D1 DE 3772659 D1 DE3772659 D1 DE 3772659D1 DE 8787420180 T DE8787420180 T DE 8787420180T DE 3772659 T DE3772659 T DE 3772659T DE 3772659 D1 DE3772659 D1 DE 3772659D1
Authority
DE
Germany
Prior art keywords
coating
cvd
technology
coating technology
cvd coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787420180T
Other languages
English (en)
Inventor
Izumi Pare Hiratsuka Nakayama
Akitoshi Suzuki
Yoshiro Kusumoto
Kazuo Takakuwa
Tetsuya Ikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15212386A external-priority patent/JPH06101439B2/ja
Priority claimed from JP61197737A external-priority patent/JPH0610352B2/ja
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Application granted granted Critical
Publication of DE3772659D1 publication Critical patent/DE3772659D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8787420180T 1986-06-28 1987-06-26 Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik. Expired - Lifetime DE3772659D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15212386A JPH06101439B2 (ja) 1986-06-28 1986-06-28 Ｃｖｄ装置のガスフロ−方法
JP61197737A JPH0610352B2 (ja) 1986-08-22 1986-08-22 Ｃｖｄ装置

Publications (1)

Publication Number Publication Date
DE3772659D1 true DE3772659D1 (de) 1991-10-10

Family

ID=26481134

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787420180T Expired - Lifetime DE3772659D1 (de) 1986-06-28 1987-06-26 Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.

Country Status (3)

Country Link
US (1) US5851589A (de)
EP (1) EP0254651B1 (de)
DE (1) DE3772659D1 (de)

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EP0251764B1 (de) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Verfahren und Vorrichtung zum Abscheiden aus der Gasphase
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DD274830A1 (de) * 1988-08-12 1990-01-03 Elektromat Veb Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
DE3926023A1 (de) * 1988-09-06 1990-03-15 Schott Glaswerke Cvd-beschichtungsverfahren zur herstellung von schichten und vorrichtung zur durchfuehrung des verfahrens
US5084417A (en) * 1989-01-06 1992-01-28 International Business Machines Corporation Method for selective deposition of refractory metals on silicon substrates and device formed thereby
US5202287A (en) * 1989-01-06 1993-04-13 International Business Machines Corporation Method for a two step selective deposition of refractory metals utilizing SiH4 reduction and H2 reduction
US5221853A (en) * 1989-01-06 1993-06-22 International Business Machines Corporation MOSFET with a refractory metal film, a silicide film and a nitride film formed on and in contact with a source, drain and gate region
US5028565A (en) * 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
ATE136159T1 (de) * 1989-09-26 1996-04-15 Canon Kk Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung
KR930002673B1 (ko) * 1990-07-05 1993-04-07 삼성전자 주식회사 고융점금속 성장방법
JP2641351B2 (ja) * 1990-08-23 1997-08-13 アプライド マテリアルズ インコーポレイテッド 可変分配率ガス流反応室
US5433169A (en) * 1990-10-25 1995-07-18 Nichia Chemical Industries, Ltd. Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
US5300813A (en) 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JP2599560B2 (ja) * 1992-09-30 1997-04-09 インターナショナル・ビジネス・マシーンズ・コーポレイション ケイ化タングステン膜形成方法
EP0778359B1 (de) * 1995-12-05 2001-08-22 Applied Materials, Inc. Reduzierung der Partikelverunreinigung in der Halbleiterfertigung
EP0823491B1 (de) * 1996-08-07 2002-02-27 Concept Systems Design Inc. Gaseinleitsystem für CVD Reaktoren
JP2002110564A (ja) * 2000-10-02 2002-04-12 Japan Pionics Co Ltd 気相成長装置及び気相成長方法
KR101027485B1 (ko) 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6875468B2 (en) * 2001-04-06 2005-04-05 Rwe Solar Gmbh Method and device for treating and/or coating a surface of an object
JP2002371361A (ja) * 2001-06-18 2002-12-26 Japan Pionics Co Ltd 気相成長装置及び気相成長方法
WO2003034477A1 (en) * 2001-10-18 2003-04-24 Chul Soo Byun Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
US7144806B1 (en) * 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US7118781B1 (en) * 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
ATE335872T1 (de) * 2003-04-24 2006-09-15 Norstel Ab Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US7052546B1 (en) * 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4973150B2 (ja) * 2006-11-27 2012-07-11 東京エレクトロン株式会社 ガス導入機構及び被処理体の処理装置
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
WO2009048490A1 (en) * 2007-10-10 2009-04-16 Michael Iza Chemical vapor deposition reactor chamber
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
SE536605C2 (sv) * 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
US20160194753A1 (en) * 2012-12-27 2016-07-07 Showa Denko K.K. SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
WO2014103728A1 (ja) * 2012-12-27 2014-07-03 昭和電工株式会社 成膜装置

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US3516811A (en) * 1966-10-04 1970-06-23 Indian Head Inc Method of and apparatus for coating glassware retaining its heat of formation
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
GB1507996A (en) * 1975-06-11 1978-04-19 Pilkington Brothers Ltd Coating glass
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
CH640571A5 (fr) * 1981-03-06 1984-01-13 Battelle Memorial Institute Procede et dispositif pour deposer sur un substrat une couche de matiere minerale.
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法
JPS60130126A (ja) * 1983-12-16 1985-07-11 Nec Corp 光気相成長法
JPS59140368A (ja) * 1983-12-27 1984-08-11 Agency Of Ind Science & Technol 薄膜製造方法とその装置
JPS60166030A (ja) * 1984-02-09 1985-08-29 Mitsubishi Electric Corp 光化学反応による膜形成装置
JPS60245217A (ja) * 1984-05-21 1985-12-05 Semiconductor Energy Lab Co Ltd 薄膜形成装置
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
US4569855A (en) * 1985-04-11 1986-02-11 Canon Kabushiki Kaisha Method of forming deposition film
US4849260A (en) * 1986-06-30 1989-07-18 Nihon Sinku Gijutsu Kabushiki Kaisha Method for selectively depositing metal on a substrate
EP0251764B1 (de) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Verfahren und Vorrichtung zum Abscheiden aus der Gasphase
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
EP0255454A3 (de) * 1986-07-26 1991-11-21 Nihon Shinku Gijutsu Kabushiki Kaisha Anordnung für chemischen Dampfniederschlag
JPH0680271A (ja) * 1992-09-01 1994-03-22 Eastman Kodak Japan Kk 用紙搬送装置

Also Published As

Publication number Publication date
US5851589A (en) 1998-12-22
EP0254651B1 (de) 1991-09-04
EP0254651A1 (de) 1988-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee