DE3771493D1 - Vorrichtung zum stuetzen eines halbleiterkristallstabes. - Google Patents

Vorrichtung zum stuetzen eines halbleiterkristallstabes.

Info

Publication number
DE3771493D1
DE3771493D1 DE8787308760T DE3771493T DE3771493D1 DE 3771493 D1 DE3771493 D1 DE 3771493D1 DE 8787308760 T DE8787308760 T DE 8787308760T DE 3771493 T DE3771493 T DE 3771493T DE 3771493 D1 DE3771493 D1 DE 3771493D1
Authority
DE
Germany
Prior art keywords
supporting
semiconductor crystal
crystal rod
rod
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787308760T
Other languages
English (en)
Inventor
Yasuhiro C O Semiconduct Ikeda
Kouji C O Isobe Facto Mizuishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE3771493D1 publication Critical patent/DE3771493D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE8787308760T 1987-04-27 1987-10-02 Vorrichtung zum stuetzen eines halbleiterkristallstabes. Expired - Fee Related DE3771493D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62103820A JPS63270383A (ja) 1987-04-27 1987-04-27 半導体結晶棒の支持装置

Publications (1)

Publication Number Publication Date
DE3771493D1 true DE3771493D1 (de) 1991-08-22

Family

ID=14364046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787308760T Expired - Fee Related DE3771493D1 (de) 1987-04-27 1987-10-02 Vorrichtung zum stuetzen eines halbleiterkristallstabes.

Country Status (4)

Country Link
US (1) US4886647A (de)
EP (1) EP0288639B1 (de)
JP (1) JPS63270383A (de)
DE (1) DE3771493D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582642A (en) * 1995-06-20 1996-12-10 Memc Electronic Materials, Inc. Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine
US5904981A (en) * 1998-05-27 1999-05-18 Tokuyama Corporation Polycrystal silicon rod having an improved morphyology
DE102014217605A1 (de) * 2014-09-03 2016-03-03 Siltronic Ag Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren
DE112017004008B4 (de) 2016-08-10 2021-08-26 Sumco Corporation Einkristall-Herstellungsverfahren und Vorrichtung

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29824A (en) * 1860-08-28 Improvement in cheese-hoops
NL108954C (de) * 1959-04-22
US3961906A (en) * 1973-11-22 1976-06-08 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material
DE2455173C3 (de) * 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
DE2515850C3 (de) * 1975-04-11 1980-04-24 Leybold-Heraeus Gmbh, 5000 Koeln Vorrichtung zum Stützen des Kristallstabs beim tiegellosen Zonenschmelzen
DE2529366A1 (de) * 1975-07-01 1977-01-20 Wacker Chemitronic Vorrichtung zum stuetzen eines kristallinen stabes
DE2626311C2 (de) * 1976-06-11 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Haltern eines Halbleiterkristallstabes
DE2626377A1 (de) * 1976-06-11 1977-12-22 Siemens Ag Vorrichtung zum abstuetzen des den keimkristall enthaltenden stabendes beim tiegelfreien zonenschmelzen
US4257841A (en) * 1978-01-06 1981-03-24 Monsanto Company Stabilizing and supporting apparatus for float zone refined semiconductor crystal rod
DE2853414A1 (de) * 1978-12-11 1980-06-19 Siemens Ag Vorrichtung zum tiegelfreien zonenschmelzen eines an seinem unteren ende mit einem angeschmolzenen keimkristall versehenen halbleiterkristallstabes
DE2853415A1 (de) * 1978-12-11 1980-06-19 Siemens Ag Vorrichtung zum tiegelfreien zonenschmelzen eines an seinem unteren ende mit einem angeschmolzenen keimkristall versehenen halbleiterkristallstabes
JPS5750754A (en) * 1980-09-11 1982-03-25 Toshiba Corp X-ray image multiplier tube and its manufacture
DD159088A1 (de) * 1981-05-22 1983-02-16 Karlheinz Trompa Vorrichtung zum abstuetzen des kristalls beim tiegelfreien zonenschmelzen
DD233595A1 (de) * 1984-12-29 1986-03-05 Akad Wissenschaften Ddr Vorrichtung zur radialen abstuetzung eines kristalls beim tiegelfreien zonenschmelzen
DD235679A1 (de) * 1985-03-21 1986-05-14 Akad Wissenschaften Ddr Vorrichtung zum abstuetzen des kristalls beim tiegellosen zonenschmelzen
JPS62153185A (ja) * 1985-12-25 1987-07-08 Komatsu Denshi Kinzoku Kk 浮遊帯域溶融法単結晶支持装置
JP2930808B2 (ja) * 1992-07-21 1999-08-09 株式会社東芝 脱水兼用洗濯機用梱包装置

Also Published As

Publication number Publication date
EP0288639B1 (de) 1991-07-17
EP0288639A1 (de) 1988-11-02
JPH0479995B2 (de) 1992-12-17
US4886647A (en) 1989-12-12
JPS63270383A (ja) 1988-11-08

Similar Documents

Publication Publication Date Title
DE69127551D1 (de) Vorrichtung zum ziehen eines einkristalls
DE3855829D1 (de) Vorrichtung zum Reinigen eines Zylinders
DE69028453D1 (de) Vorrichtung zum Befestigen eines Arbeitsgerätes
DE3855324D1 (de) Vorrichtung zum Positionieren eines Wafers
DE3878287D1 (de) Vorrichtung zum aufbringen eines bandes.
DE3881131D1 (de) Verfahren zum steuern eines anzeigegeraetes.
DE69226353D1 (de) Vorrichtung zum vakuum-giessen
DE3889473D1 (de) Vorrichtung zum Handhaben eines Wafers.
DE69230356T2 (de) Vorrichtung zum herstellen von halbleitern
DE3865317D1 (de) Geraet zum vorschub eines stabfoermigen gegenstandes.
DE3867151D1 (de) Automatische vorrichtung zum abtasten eines rohrumfanges.
DE68906343D1 (de) Geraet zum halten eines gegenstandes.
DE68924622D1 (de) Vorrichtung zum Steuern eines Halbleiterlasers.
ATA247085A (de) Vorrichtung zum züchten eines einkristalls
DE69108164D1 (de) Vorrichtung zum Anhängen eines Roboters an einen Unterstützungsbalken.
ATA186187A (de) Vorrichtung zum nadeln eines vlieses
DE69101810D1 (de) Vorrichtung zum Halten eines Werkstückes.
DE3789759D1 (de) Vorrichtung zum Abtasten der Grösse eines Dokuments.
ATA138689A (de) Vorrichtung zum festlegen von radlenkern
DE3768866D1 (de) Vorrichtung zum halten eines reissverschlussschiebers.
DE3761606D1 (de) Vorrichtung zum halten eines reissverschlussschiebers.
DE3775136D1 (de) Vorrichtung zum halten eines bandes.
DE59002808D1 (de) Vorrichtung zum zeitweilen Speichern eines Gutes.
DE3771493D1 (de) Vorrichtung zum stuetzen eines halbleiterkristallstabes.
DE3772801D1 (de) Vorrichtung zum erzeugen eines drehsignales.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee