DE3752249T2 - Elektronen emittierende Vorrichtung - Google Patents

Elektronen emittierende Vorrichtung

Info

Publication number
DE3752249T2
DE3752249T2 DE3752249T DE3752249T DE3752249T2 DE 3752249 T2 DE3752249 T2 DE 3752249T2 DE 3752249 T DE3752249 T DE 3752249T DE 3752249 T DE3752249 T DE 3752249T DE 3752249 T2 DE3752249 T2 DE 3752249T2
Authority
DE
Germany
Prior art keywords
emitting device
electron emitting
electron
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3752249T
Other languages
English (en)
Other versions
DE3752249D1 (de
Inventor
Takeo Tsukamoto
Akira Shimizu
Akira Suzuki
Masao Sugata
Isamu Shimoda
Masahiko Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61156265A external-priority patent/JPS6313227A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3752249D1 publication Critical patent/DE3752249D1/de
Application granted granted Critical
Publication of DE3752249T2 publication Critical patent/DE3752249T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/14—Solid thermionic cathodes characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/04—Manufacture of electrodes or electrode systems of thermionic cathodes
    • H01J9/042—Manufacture, activation of the emissive part
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/316—Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165—Surface conduction emission type cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE3752249T 1986-07-04 1987-07-03 Elektronen emittierende Vorrichtung Expired - Lifetime DE3752249T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61156265A JPS6313227A (ja) 1986-07-04 1986-07-04 電子放出素子およびその製造方法
JP21058886 1986-09-09

Publications (2)

Publication Number Publication Date
DE3752249D1 DE3752249D1 (de) 1999-03-04
DE3752249T2 true DE3752249T2 (de) 1999-07-08

Family

ID=26484066

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3750936T Expired - Lifetime DE3750936T2 (de) 1986-07-04 1987-07-03 Elektronen-Emitter-Vorrichtung und ihr Herstellungsverfahren.
DE3752249T Expired - Lifetime DE3752249T2 (de) 1986-07-04 1987-07-03 Elektronen emittierende Vorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE3750936T Expired - Lifetime DE3750936T2 (de) 1986-07-04 1987-07-03 Elektronen-Emitter-Vorrichtung und ihr Herstellungsverfahren.

Country Status (3)

Country Link
US (2) US5559342A (de)
EP (2) EP0251328B1 (de)
DE (2) DE3750936T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40566E1 (en) 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
CA2159292C (en) * 1994-09-29 2000-12-12 Sotomitsu Ikeda Manufacture methods of electron-emitting device, electron source, and image-forming apparatus
JP2946189B2 (ja) * 1994-10-17 1999-09-06 キヤノン株式会社 電子源及び画像形成装置、並びにこれらの活性化方法
JP3241251B2 (ja) * 1994-12-16 2001-12-25 キヤノン株式会社 電子放出素子の製造方法及び電子源基板の製造方法
JP3299096B2 (ja) 1995-01-13 2002-07-08 キヤノン株式会社 電子源及び画像形成装置の製造方法、並びに電子源の活性化処理方法
US5939824A (en) * 1995-05-30 1999-08-17 Canon Kabushiki Kaisha Electron emitting device having a conductive thin film formed of at least two metal elements of difference ionic characteristics
JP3174999B2 (ja) * 1995-08-03 2001-06-11 キヤノン株式会社 電子放出素子、電子源、それを用いた画像形成装置、及びそれらの製造方法
US6019913A (en) * 1998-05-18 2000-02-01 The Regents Of The University Of California Low work function, stable compound clusters and generation process
JP3315652B2 (ja) 1998-09-07 2002-08-19 キヤノン株式会社 電流出力回路
GB9919737D0 (en) * 1999-08-21 1999-10-20 Printable Field Emitters Limit Field emitters and devices
JP2001319567A (ja) * 2000-02-28 2001-11-16 Ricoh Co Ltd 電子源基板および該電子源基板を用いた画像表示装置
JP3610325B2 (ja) 2000-09-01 2005-01-12 キヤノン株式会社 電子放出素子、電子源及び画像形成装置の製造方法
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6753544B2 (en) * 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6781146B2 (en) * 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6852554B2 (en) 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
US6787792B2 (en) 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US7170223B2 (en) 2002-07-17 2007-01-30 Hewlett-Packard Development Company, L.P. Emitter with dielectric layer having implanted conducting centers
US20080072953A1 (en) * 2006-09-27 2008-03-27 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact device
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
WO2010129163A2 (en) * 2009-05-06 2010-11-11 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
CN102301496A (zh) * 2009-06-10 2011-12-28 薄膜硅公司 光生伏打模块和制造具有多个半导体层堆叠的光生伏打模块的方法
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
US3611077A (en) * 1969-02-26 1971-10-05 Us Navy Thin film room-temperature electron emitter
US3814968A (en) * 1972-02-11 1974-06-04 Lucas Industries Ltd Solid state radiation sensitive field electron emitter and methods of fabrication thereof
US3806372A (en) * 1972-06-02 1974-04-23 Rca Corp Method for making a negative effective-electron-affinity silicon electron emitter
US3990914A (en) * 1974-09-03 1976-11-09 Sensor Technology, Inc. Tubular solar cell
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
JPS59169034A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd マトリツクスカソ−ドおよびその製造方法
JPS60221926A (ja) * 1984-04-19 1985-11-06 Sony Corp 放電表示装置の製造方法

Also Published As

Publication number Publication date
EP0602663B1 (de) 1999-01-20
DE3750936T2 (de) 1995-05-18
EP0251328A2 (de) 1988-01-07
EP0251328A3 (en) 1989-10-18
DE3750936D1 (de) 1995-02-16
DE3752249D1 (de) 1999-03-04
EP0602663A1 (de) 1994-06-22
US5627111A (en) 1997-05-06
EP0251328B1 (de) 1995-01-04
US5559342A (en) 1996-09-24

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Legal Events

Date Code Title Description
8332 No legal effect for de
8364 No opposition during term of opposition