DE3727170A1 - DC/DC voltage converter having a transformer - Google Patents
DC/DC voltage converter having a transformerInfo
- Publication number
- DE3727170A1 DE3727170A1 DE19873727170 DE3727170A DE3727170A1 DE 3727170 A1 DE3727170 A1 DE 3727170A1 DE 19873727170 DE19873727170 DE 19873727170 DE 3727170 A DE3727170 A DE 3727170A DE 3727170 A1 DE3727170 A1 DE 3727170A1
- Authority
- DE
- Germany
- Prior art keywords
- pole
- mos field
- power mos
- transformer
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Die Erfindung betrifft einen Gleichspannungswandler mit einem Übertrager, dessen Primärstrom durch einen Schalt transistor gesteuert wird und auf dessen Sekundärseite einer oder mehrere Schalter in Längszweigen und/oder in Querzweigen angeordnet sind.The invention relates to a DC-DC converter a transformer, the primary current through a switching transistor is controlled and on its secondary side one or more switches in longitudinal branches and / or in Cross branches are arranged.
Gleichspannungswandler mit diesen Merkmalen werden in Schaltnetzteilen verwendet, bei denen der Übertrager ne ben der Spannungstransformation gleichzeitig die Poten tialtrennung z. B. zwischen dem Versorgungsnetz und den im allgemeinen mit Niederspannung versorgten Geräten über nimmt.DC-DC converters with these features are described in Switching power supplies used in which the transformer ne The voltage transforms the pots at the same time tial separation z. B. between the supply network and the im general devices supplied with low voltage takes.
Eine Übersicht über die verschiedenen Wandlertypen, die bei Schaltnetzteilen eingesetzt werden können, findet man z. B. in einem Artikel von J. Wüstehube (Wüstehube, J.: Gleichspannungswandler für Schaltnetzteile. Elektronik (1978) Heft 4, Seiten 102 bis 107).An overview of the different types of transducers that can be used with switching power supplies e.g. B. in an article by J. Wüstehube (Wüstehube, J .: DC voltage converter for switching power supplies. electronics (1978) Issue 4, pages 102 to 107).
Gleichspannungswandler aller Grundtypen (Sperrwandler, Durchflußwandler, Gegentaktwandler) benötigen auf der Se kundärseite Schalter, mit denen die in magnetischen Spei cherelementen (meist die Spulen der Übertrager) zwischen gespeicherte Energie abgerufen und an einen Verbraucher übertragen wird. Diese Schalter sind durch schnellschal tende Dioden realisiert, also durch Schottky-Dioden oder schnelle Epitaxial-Dioden.DC converters of all basic types (flyback converters, Flow converters, push-pull converters) on the Se secondary side switches with which the magnetic memory cherelemente (usually the coils of the transformer) between stored energy accessed and sent to a consumer is transmitted. These switches are quick-release diodes realized, ie by Schottky diodes or fast epitaxial diodes.
Im durchgeschalteten Zustand liegt der Spannungsabfall über diesen Dioden zwischen 0,4 und 1,2 Volt. Werden über sie große Leistungen übertragen, d. h., fließen große Ströme, so würde sich die Verlustleistung erheblich ver ringern, sofern sich der Spannungsabfall bei maximalem Strom nur um wenige zehntel Volt reduzieren ließe. Abge sehen von der damit verbundenen Erhöhung des Wirkungsgra des würde auch der Aufwand an Kühlmitteln verringert wer den.The voltage drop is in the switched-on state over these diodes between 0.4 and 1.2 volts. Be over they transmit great power, d. i.e. large flow Currents, the power loss would change considerably wrestle, provided the voltage drop at maximum Electricity could only be reduced by a few tenths of a volt. Abge see the associated increase in effectiveness that would also reduce the cost of coolants the.
Der Erfindung liegt die Aufgabe zugrunde, bei Gleichspan nungswandlern der eingangs genannten Art Mittel als Schalter einzusetzen, bei denen die Verlustleistung ge ringer ist als die schnellschaltenden Dioden.The invention is based, with DC chip the task voltage transformers of the type mentioned at the beginning as Use switches in which the power loss ge is ringer than the fast-switching diodes.
Diese Aufgabe wird dadurch gelöst, daß als Schalter ein Power-MOS-Feldeffekttransistor verwendet wird, in dessen Gate-Source-Kreis die Serienschaltung einer gesonderten Sekundärspule des Übertragers und eines Zweipols zur Im pulsformung liegt.This object is achieved in that a switch Power MOS field effect transistor is used in its Gate-source circuit the series connection of a separate Secondary coil of the transformer and a dipole to Im pulse shaping lies.
Eine weitere Lösung dieser Aufgabe besteht darin, daß als Schalter ein Power-MOS-Feldeffekttransistor verwendet wird, daß ein Vierpol zur Impulsformung vorgesehen ist, dessen Eingang mit einer gesonderten Sekundärspule des Übertragers und dessen Ausgang mit der Gate-Source- Strecke des Power-MOS-Feldeffekttransistors beschaltet ist.Another solution to this problem is that as Switch uses a power MOS field effect transistor is that a four-pole is provided for pulse shaping, whose input with a separate secondary coil of Transformer and its output with the gate-source Route of the power MOS field effect transistor connected is.
Vorteilhafte Ausgestaltungen der Erfindung sind den Un teransprüchen zu entnehmen.Advantageous embodiments of the invention are the Un claims.
Anhand der Figuren und anhand von Ausführungsbeispielen soll die Erfindung näher erläutert werden. Es zeigtBased on the figures and using exemplary embodiments the invention will be explained in more detail. It shows
Fig. 1 das Prinzipschaltbild eines Sperrwandlers mit er findungsgemäßen Merkmalen, Fig. 1 shows the principle circuit diagram of a flyback converter with he inventive features,
Fig. 2 das Prinzipschaltbild eines Durchflußwandlers mit erfindungsgemäßen Merkmalen und Fig. 2 shows the basic circuit diagram of a forward converter with features according to the invention and
Fig. 3 das Prinzipschaltbild eines Durchflußwandlers nach einer erfindungsgemäßen Variante. Fig. 3 shows the basic circuit diagram of a forward converter according to a variant of the invention.
In den Figuren sind Bauteile, die in unterschiedlichen Anordnungen die gleiche Funktion haben, mit dem gleichen Bezugszeichen versehen.In the figures are components that are in different Arrangements have the same function, with the same Provide reference numerals.
Beim Sperrwandler nach Fig. 1 wird eine Eingangsspan nung UE mit einem Schalttransistor T an die Primärwick lung L 1 eines Übertragers UT gelegt. Die Dauer der Leit- und Sperrphasen des Schalttransistors T wird von einem nicht gezeigten Pulsbreitenmodulator bestimmt. Der Über trager UT hat auf seiner Sekundärseite zwei Wicklun gen L 2, L 3 mit einem gemeinsamen Anschluß. Die Wick lung L 3 des Übertragers UT liegt im Lastkreis des Wand lers. Der Lastkreis enthält außerdem die Drain-Source- Strecke eines Power-MOS-Feldeffekttransistors FT (kurz: Power-Mosfet), dessen Source S mit dem gemeinsamen An schluß der Wicklungen L 2 und L 3 verbunden ist, und die Parallelschaltung eines Lastwiderstandes RA mit einem Ausgangskondensator CA. An dieser Parallelschaltung fällt eine Ausgangsspannung UA ab.In the flyback converter according to FIG. 1, an input voltage voltage UE with a switching transistor T is applied to the primary winding L 1 of a transformer UT . The duration of the conducting and blocking phases of the switching transistor T is determined by a pulse width modulator, not shown. The transformer UT has on its secondary side two windings L 2 , L 3 with a common connection. The winding L 3 of the transformer UT is in the load circuit of the converter. The load circuit also contains the drain-source path of a power MOS field-effect transistor FT (short: power mosfet), whose source S is connected to the common connection of the windings L 2 and L 3 , and the parallel connection of a load resistor RA with an output capacitor CA. An output voltage UA drops at this parallel connection.
Der Power-Mosfet FT ist so angeschlossen, daß er invers betrieben wird, d. h., daß die in seinem Ersatzschaltbild zur Drain-Source-Strecke parallel liegende Diode - bei Stromfluß im Lastkreis - in Durchlaßrichtung gepolt ist. Die Anode dieser Diode ist mit dem Source-Anschluß S und die Kathode mit dem Drain-Anschluß D verbunden. Ihre Po lung soll die gleiche sein, wie die Polung der als Schal ter verwendeten Dioden nach dem oben zitierten Stand der Technik. Deshalb ist der Source-Anschluß S des Power-Mos fets an den gemeinsamen Verbindungspunkt der Wicklun gen L 2 und L 3 geführt, unter der Voraussetzung, die Wick lung L 3 hat relativ zur Wicklung L 1 den aus der Fig. 1 entnehmbaren Wicklungssinn. Durch die gesonderte Wick lung L 2 soll der Power-Mosfet FT während der Leitphase des Schalttransistors T gesperrt und während der Sperr phase leitend werden. Aus diesem Grunde ist der zweite Anschluß der Wicklung L 2 über einen Zweipol ZI mit dem Gate-Anschluß G des Power-Mosfet FT verbunden, wobei der Windungssinn der Wicklung L 2 der Fig. 1 entnehmbar ist.The Power-Mosfet FT is connected in such a way that it is operated inversely, that is to say that the diode lying parallel to the drain-source path in its equivalent circuit diagram is polarized in the forward direction when current flows in the load circuit. The anode of this diode is connected to the source terminal S and the cathode to the drain terminal D. Your Po tion should be the same as the polarity of the diodes used as switch ter according to the prior art cited above. Therefore, the source terminal S of the power MOS FETs out to the common connection point of the Wicklun gen L 2 and L 3, with the proviso that Wick lung L 3 has relative to the winding L 1 to be drawn from FIG. 1, the winding direction. Due to the separate winding L 2 , the power mosfet FT is to be blocked during the conducting phase of the switching transistor T and to become conductive during the blocking phase. For this reason, the second connection of the winding L 2 is connected via a two-pole ZI to the gate connection G of the power mosfet FT , the winding sense of the winding L 2 being shown in FIG. 1.
Der Zweipol ZI dient der Formung der Schaltimpulse für den Power-Mosfet FT; er enthält zwei parallel liegende Zweige, von denen der obere - wegen einer Diode D 1 - wäh rend des Einschaltvorganges (Übergang von der Sperrphase zur Leitphase) und der untere - wegen einer Diode D 2 - während des Ausschaltvorganges (Übergang von der Leitpha se zur Sperrphase) des Power-Mosfets FT Strom führt. Der der Diode D 1 nachgeschaltete Widerstand R 1 ist von einem Kondensator C 1 überbrückt. Durch Bemessung der Zeitkon stante R 1 × C 1 wird der Einschaltzeitpunkt des Power-Mos fets FT relativ zum Ausschaltzeitpunkt des Schalttransi stors T festgelegt. Entsprechendes gilt für den unteren Zweig mit der umgekehrt zur Diode D 1 gepolten Diode D 2, und einem nachgeschalteten Widerstand R 2, der von einem Kondensator C 2 überbrückt ist. Die Zeitkontante R 2 × C 2 ist möglichst klein zu wählen, um die Verlustleistung während des Ausschaltvorganges kleinzuhalten, da der Po wer-Mosfet FT bei sehr hohen Strömen ausgeschaltet werden muß.The two-pole ZI is used to form the switching pulses for the Power Mosfet FT ; It contains two parallel branches, of which the upper - due to a diode D 1 - during the switch-on process (transition from the blocking phase to the leading phase) and the lower - due to a diode D 2 - during the switch-off process (transition from the leading phase to Blocking phase) of the power mosfet FT current. The diode D 1 downstream resistance R 1 is bridged by a capacitor C. 1 By measuring the time constant R 1 × C 1 , the switch-on time of the power mosfet FT is determined relative to the switch-off time T of the switching transistor. The same applies to the lower branch with the diode D 2 polarized in reverse to the diode D 1 , and a downstream resistor R 2 which is bridged by a capacitor C 2 . The time constant R 2 × C 2 should be chosen to be as small as possible in order to keep the power loss low during the switch-off process, since the power mosfet FT must be switched off at very high currents.
Beim Durchflußwandler mit zwei Power-Mosfets FT 1 und FT 2 nach Fig. 2 enthält der Übertrager UT drei gesonderte Sekundärwicklungen L 4, L 5 und L 6. Die Wicklung L 5 liegt im Lastkreis des Wandlers; in Reihe zu ihr ist die Drain-Source-Strecke des Power-Mosfets FT 1 und eine Spei cherdrossel DR geschaltet. Der Verbindungspunkt der Dros sel DR und des Drain-Anschlusses D des Power-Mosfet FT 1 - sein Source-Anschluß S ist mit einem Anschluß der Wick lung L 5 verbunden - ist gleichzeitig der Drain-Anschluß des zweiten Power-Mosfet FT 2, dessen Source-Anschluß mit dem zweiten Anschluß der Wicklung L 5 verbunden ist.In the forward converter with two power mosfets FT 1 and FT 2 according to FIG. 2, the transformer UT contains three separate secondary windings L 4 , L 5 and L 6 . The winding L 5 is in the load circuit of the converter; the drain-source path of the power mosfet FT 1 and a storage choke DR are connected in series with it. The connection point of the Dros sel DR and the drain terminal D of the power mosfet FT 1 - its source terminal S is connected to a terminal of the winding L 5 - is also the drain terminal of the second power mosfet FT 2 , whose Source connection is connected to the second connection of the winding L 5 .
Die Drain-Source-Strecken der Power-Mosfets FT 1 und FT 2 sind wiederum so angeschlossen, daß die zu ihnen parallel liegenden Dioden genauso gepolt sind, wie es z. B. bei Wüstehube (Wüstehube, J.: l. c.) angegeben ist. Der eine Anschluß der Wicklung L 5 ist gleichzeitig mit einem An schluß der gesonderten Wicklung L 4 verbunden, während der zweite Anschluß der Wicklung L 5 mit einem Anschluß der Wicklung L 6 verbunden ist. Der verbleibende Anschluß der Wicklung L 4 bzw. L 6 ist über einen Zweipol ZI 1 bzw. ZI 2 an den Gate-Anschluß des Power-Mosfets FT 1 bzw. FT 2 ge führt. Der Windungssinn der Wicklungen L 4 und L 6 ist so gewählt, daß während der Leitphase des Schalttransi stors T der Power-Mosfet FT 1 leitend ist, während der Po wer-Mosfet FT 2 gesperrt ist.The drain-source paths of the power mosfets FT 1 and FT 2 are in turn connected in such a way that the diodes parallel to them are polarized in exactly the same way as z. B. at Wüstehube (Wüstehube, J .: lc) is specified. One connection of the winding L 5 is simultaneously connected to a circuit of the separate winding L 4 , while the second connection of the winding L 5 is connected to a connection of the winding L 6 . The remaining connection of the winding L 4 or L 6 is ge via a two-pole ZI 1 or ZI 2 to the gate connection of the power mosfet FT 1 or FT 2 leads. The winding sense of the windings L 4 and L 6 is chosen so that during the leading phase of the switching transistor T the power mosfet FT 1 is conductive, while the power mosfet FT 2 is blocked.
Die Zweipole ZI 1, ZI 2 sind ebenso ausgestaltet wie der Zweipol ZI. Die Zeitkonstanten der Zweipole ZI 1 und ZI 2 müssen so gewählt werden, daß die Power-Mosfets FT 1 und FT 2 niemals gleichzeitig leitend sind.The two-pole ZI 1 , ZI 2 are configured in the same way as the two-pole ZI . The time constants of the two-pole ZI 1 and ZI 2 must be selected so that the power mosfets FT 1 and FT 2 are never conductive at the same time.
Bei dem Durchflußwandler nach Fig. 3 werden die Power- Mosfets FT 1 und FT 2 über Vierpole VI 1 und VI 2 angesteu ert. Der Eingang des Vierpols VI 1 ist mit der gesonderten Wicklung L 4 beschaltet, während sein Ausgang an die Gate- Source-Strecke des Power-Mosfets FT 1 angeschlossen ist. Entsprechendes gilt für die gesonderte Wicklung L 6, den Vierpol VI 2 und die Gate-Source-Strecke des Power- Mosfet FT 2. Die Vierpole VI 1 und VI 2 haben den gleichen Aufbau.In the forward converter of FIG. 3, the power Mosfets FT 1 and FT 2 through four poles VI 1 and VI 2 are ert angesteu. The input of the quadripole VI 1 is wired to the separate winding L 4, while its output to the gate-source Route of the Power Mosfets FT 1 is connected. The same applies to the separate winding L 6 , the four-pole VI 2 and the gate-source path of the Power-Mosfet FT 2 . The four-pole VI 1 and VI 2 have the same structure.
Der Vierpol VI 1 hat z. B. gegenüber dem Zweipol ZI 1 den Vorteil, daß durch ihn der Ausschaltvorgang des Power- Mosfets FT 1 schneller erfolgt, und zwar wegen eines pnp- Transistors T 1, dessen Kollektor-Emitter-Strecke aus gangsseitig den einzigen Querzweig des Vierpols VI 1 bil det. Über ihn werden die Eingangskapazitäten des Power- Mosfets in sehr kurzer Zeit entladen und folglich der Ausschaltvorgang des Power-Mosfets FT 1 wesentlich ver kürzt. In der Basiszuleitung des Transistors T 1 liegt ei ne Diode D 4, die in der Sperrphase des Schalttransi stors T leitend wird. Dadurch wird der Transistor T 1 lei tend bzw. der Power-Mosfet FT 1 gesperrt.The four-pole VI 1 has z. B. compared to the two-pole ZI 1 the advantage that the switching-off of the power mosfet FT 1 takes place faster because of a pnp transistor T 1 , the collector-emitter path of which is the only transverse branch of the four-pole VI 1 bil on the output side det. It discharges the input capacities of the Power-Mosfet in a very short time and consequently shortens the switch-off process of the Power-Mosfet FT 1 considerably. In the base lead of the transistor T 1 is egg ne diode D 4 , the gate T in the off phase of the Schalttransi becomes conductive. As a result, the transistor T 1 is conductive or the power mosfet FT 1 is blocked.
In Serie zur Diode D 4 liegt die Parallelschaltung eines Widerstandes R 5 mit der Serienschaltung eines Widerstan des R 4 und eines Kondensators C 4. Der eine Anschluß die ser Parallelschaltung ist an den eingangsseitigen An schluß desjenigen Längszweiges des Vierpoles VI 1 geführt, der eine Diode D 3 in Serie zu einem Widerstand R 3 ent hält, wobei der Widerstand R 3 durch einen Kondensator C 3 überbrückt ist. Die Polung der Diode D 3 ist der Polung der Diode D 4 entgegengesetzt.In series with the diode D 4 is the parallel connection of a resistor R 5 with the series connection of a resistor of the R 4 and a capacitor C 4 . One connection of this water parallel circuit is connected to the input side of the longitudinal branch of the four-pole VI 1 , which holds a diode D 3 in series with a resistor R 3 , the resistor R 3 being bridged by a capacitor C 3 . The polarity of the diode D 3 is opposite to the polarity of the diode D 4 .
Durch Bemessung der Zeitkonstanten R 3 × C 3 und R 5 × C 4 werden die Einschalt- und Ausschaltzeitpunkte des Power- Mosfets FT 1 eingestellt.The switch-on and switch-off times of the Power Mosfet FT 1 are set by measuring the time constants R 3 × C 3 and R 5 × C 4 .
Entsprechendes gilt für die Zeitkonstanten des Vier pols VI 2 und des Power-Mosfet FT 2. Der Widerstand R 4 dient der Begrenzung des Basisstromes für den Transi stor T 1. The same applies to the time constants of the four-pole VI 2 and the Power-Mosfet FT 2 . The resistor R 4 serves to limit the base current for the transistor T 1 .
Da übr die Drain-Source-Strecken der Power-Mosfets FT, FT 1 und FT 2 Ströme in der Größenordnung einiger Ampere fließen können, lohnt es, die damit verbundenen Verluste durch Parallelschaltung der Drain-Source-Strecken mehre rer Power-Mosfets herabzusetzen.Since the drain-source paths of the power mosfets FT, FT 1 and FT 2 currents can flow in the order of a few amperes, it is worthwhile to reduce the associated losses by connecting the drain-source paths in parallel of several power mosfets.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE19873727170 DE3727170A1 (en) | 1987-08-14 | 1987-08-14 | DC/DC voltage converter having a transformer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE19873727170 DE3727170A1 (en) | 1987-08-14 | 1987-08-14 | DC/DC voltage converter having a transformer |
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DE3727170A1 true DE3727170A1 (en) | 1989-02-23 |
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DE19873727170 Withdrawn DE3727170A1 (en) | 1987-08-14 | 1987-08-14 | DC/DC voltage converter having a transformer |
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0396125A2 (en) | 1989-05-05 | 1990-11-07 | Alcatel SEL Aktiengesellschaft | Forward conventer |
EP0462547A2 (en) * | 1990-06-20 | 1991-12-27 | Siemens Nixdorf Informationssysteme Aktiengesellschaft | Method and circuit configuration for generating a sinusoidal AC mains voltage from a DC voltage |
EP0944161A2 (en) * | 1998-03-17 | 1999-09-22 | Sony Corporation | Current-resonant switching power supply |
WO2000033450A1 (en) * | 1998-12-02 | 2000-06-08 | Siemens Ag Österreich | Isolating transformer |
WO2000054398A1 (en) * | 1999-03-11 | 2000-09-14 | Ericsson, Inc. | General self-driven synchronous rectification scheme for synchronous rectifiers having a floating gate |
EP1041706A1 (en) * | 1999-03-29 | 2000-10-04 | Alcatel | Synchronous rectifying flyback converter with variable input and output voltages |
EP0891038A4 (en) * | 1996-11-13 | 2001-05-02 | Seiko Epson Corp | Power supply device and portable electronic equipment |
EP1104084A2 (en) * | 1999-11-25 | 2001-05-30 | Drenkrum Limited | Efficient parallel connection of improved power-supplies |
EP1231705A2 (en) * | 2001-02-09 | 2002-08-14 | Netpower Technologies Inc. | A power converter including circuits for improved operational control of synchronous rectifiers therein |
EP1237268A2 (en) * | 2001-03-01 | 2002-09-04 | Power-One AG | Voltage converter |
FR2826523A1 (en) * | 2001-06-25 | 2002-12-27 | Cit Alcatel | SELF-CONTROLLED SYNCHRONOUS RECTIFIER |
FR2830083A1 (en) * | 2001-09-21 | 2003-03-28 | Valeo Electronique | Measurement of a saw tooth current has a measurement circuit configured to measure both positive and negative current pulses so that bi-directional currents can be measured |
EP1387480A2 (en) * | 2002-08-01 | 2004-02-04 | Shindengen Electric Manufacturing Company, Limited | Synchronous rectifier circuit |
US7035120B2 (en) | 2002-06-05 | 2006-04-25 | Shindengen Electric Manufacturing Co., Ltd. | Driving circuit employing synchronous rectifier circuit |
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JPS58175975A (en) * | 1982-04-07 | 1983-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Power converter |
DE3605417C1 (en) * | 1986-02-20 | 1987-07-09 | Ant Nachrichtentech | Rectifier circuit |
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