DE3672654D1 - Verfahren und vorrichtung zur herstellung einer duennschicht mittels einer photochemischen reaktion. - Google Patents

Verfahren und vorrichtung zur herstellung einer duennschicht mittels einer photochemischen reaktion.

Info

Publication number
DE3672654D1
DE3672654D1 DE8686104633T DE3672654T DE3672654D1 DE 3672654 D1 DE3672654 D1 DE 3672654D1 DE 8686104633 T DE8686104633 T DE 8686104633T DE 3672654 T DE3672654 T DE 3672654T DE 3672654 D1 DE3672654 D1 DE 3672654D1
Authority
DE
Germany
Prior art keywords
producing
thin film
photochemical reaction
photochemical
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686104633T
Other languages
English (en)
Inventor
Kanji Tsujii
Yusuke Yajima
Seiichi Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3672654D1 publication Critical patent/DE3672654D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE8686104633T 1985-04-08 1986-04-04 Verfahren und vorrichtung zur herstellung einer duennschicht mittels einer photochemischen reaktion. Expired - Lifetime DE3672654D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072682A JPS61231716A (ja) 1985-04-08 1985-04-08 成膜装置

Publications (1)

Publication Number Publication Date
DE3672654D1 true DE3672654D1 (de) 1990-08-23

Family

ID=13496391

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686104633T Expired - Lifetime DE3672654D1 (de) 1985-04-08 1986-04-04 Verfahren und vorrichtung zur herstellung einer duennschicht mittels einer photochemischen reaktion.

Country Status (4)

Country Link
US (1) US4716852A (de)
EP (1) EP0198361B1 (de)
JP (1) JPS61231716A (de)
DE (1) DE3672654D1 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5769950A (en) * 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US6077718A (en) * 1985-07-23 2000-06-20 Canon Kabushiki Kaisha Method for forming deposited film
US5261961A (en) * 1985-07-23 1993-11-16 Canon Kabushiki Kaisha Device for forming deposited film
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US5294285A (en) * 1986-02-07 1994-03-15 Canon Kabushiki Kaisha Process for the production of functional crystalline film
JPS63233564A (ja) * 1987-03-23 1988-09-29 Canon Inc 接合型トランジスタの製造法
DE3883878T2 (de) * 1987-07-16 1994-01-05 Texas Instruments Inc Behandlungsapparat und Verfahren.
DE3874638T2 (de) * 1987-07-16 1993-03-18 Texas Instruments Inc Behandlungsapparat und -verfahren.
EP0299249A1 (de) * 1987-07-16 1989-01-18 Texas Instruments Incorporated Behandlungsapparat und -verfahren
DE3873846T2 (de) * 1987-07-16 1993-03-04 Texas Instruments Inc Behandlungsapparat und verfahren.
EP0299246A1 (de) * 1987-07-16 1989-01-18 Texas Instruments Incorporated Behandlungsapparat und -verfahren
US4910043A (en) * 1987-07-16 1990-03-20 Texas Instruments Incorporated Processing apparatus and method
US4886570A (en) * 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
US5138973A (en) * 1987-07-16 1992-08-18 Texas Instruments Incorporated Wafer processing apparatus having independently controllable energy sources
US4842686A (en) * 1987-07-17 1989-06-27 Texas Instruments Incorporated Wafer processing apparatus and method
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
US5407867A (en) * 1988-05-12 1995-04-18 Mitsubishki Denki Kabushiki Kaisha Method of forming a thin film on surface of semiconductor substrate
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
DE3926023A1 (de) * 1988-09-06 1990-03-15 Schott Glaswerke Cvd-beschichtungsverfahren zur herstellung von schichten und vorrichtung zur durchfuehrung des verfahrens
KR940003787B1 (ko) * 1988-09-14 1994-05-03 후지쓰 가부시끼가이샤 박막 형성장치 및 방법
JPH02114530A (ja) * 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
DE3905297A1 (de) * 1989-02-21 1990-08-23 Siemens Ag Verfahren zum herstellen polykristalliner halbleitermaterialschichten durch plasmaangeregte gasphasenabscheidung
US5221643A (en) * 1989-02-21 1993-06-22 Siemens Aktiengesellschaft Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5028452A (en) * 1989-09-15 1991-07-02 Creative Systems Engineering, Inc. Closed loop system and process for conversion of gaseous or vaporizable organic and/or organo-metallic compounds to inert solid matrix resistant to solvent extraction
US5225378A (en) * 1990-11-16 1993-07-06 Tokyo Electron Limited Method of forming a phosphorus doped silicon film
US5352487A (en) * 1992-08-31 1994-10-04 Gte Products Corporation Process for the formation of SiO2 films
US5427625A (en) * 1992-12-18 1995-06-27 Tokyo Electron Kabushiki Kaisha Method for cleaning heat treatment processing apparatus
US5959098A (en) 1996-04-17 1999-09-28 Affymetrix, Inc. Substrate preparation process
US6365235B2 (en) * 1995-11-13 2002-04-02 Tepla Ag Surface treatment method and device therefor
US5772771A (en) 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6706875B1 (en) * 1996-04-17 2004-03-16 Affyemtrix, Inc. Substrate preparation process
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US7615061B2 (en) * 2006-02-28 2009-11-10 Arthrocare Corporation Bone anchor suture-loading system, method and apparatus
US20080029197A1 (en) * 2006-07-04 2008-02-07 Matsushita Electric Industrial Co., Ltd. Surface treating apparatus using atomic hydrogen
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US20130276707A1 (en) * 2012-04-23 2013-10-24 Asm Ip Holding B.V. Vertical furnace with circumferentially distributed gas inlet system
KR101876960B1 (ko) * 2017-03-14 2018-07-10 주식회사 에이치비테크놀러지 박막형성 장치
KR101876961B1 (ko) * 2017-03-14 2018-07-10 주식회사 에이치비테크놀러지 박막형성 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348428A (en) * 1980-12-15 1982-09-07 Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences Method of depositing doped amorphous semiconductor on a substrate
WO1983004269A1 (en) * 1982-06-01 1983-12-08 Massachusetts Institute Of Technology Maskless growth of patterned films
US4447469A (en) * 1982-06-10 1984-05-08 Hughes Aircraft Company Process for forming sulfide layers by photochemical vapor deposition
JPS5940525A (ja) * 1982-08-30 1984-03-06 Mitsubishi Electric Corp 成膜方法
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法

Also Published As

Publication number Publication date
EP0198361A3 (en) 1987-07-22
EP0198361B1 (de) 1990-07-18
JPS61231716A (ja) 1986-10-16
EP0198361A2 (de) 1986-10-22
US4716852A (en) 1988-01-05

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee