DE3672519D1 - Planares halbleiterbauteil mit einer schutzringstruktur, klasse solcher bauteile und herstellungsverfahren. - Google Patents
Planares halbleiterbauteil mit einer schutzringstruktur, klasse solcher bauteile und herstellungsverfahren.Info
- Publication number
- DE3672519D1 DE3672519D1 DE8686200696T DE3672519T DE3672519D1 DE 3672519 D1 DE3672519 D1 DE 3672519D1 DE 8686200696 T DE8686200696 T DE 8686200696T DE 3672519 T DE3672519 T DE 3672519T DE 3672519 D1 DE3672519 D1 DE 3672519D1
- Authority
- DE
- Germany
- Prior art keywords
- class
- manufacturing
- components
- ring structure
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/013—Breakdown voltage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/07—Guard rings and cmos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8506410A FR2581252B1 (fr) | 1985-04-26 | 1985-04-26 | Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3672519D1 true DE3672519D1 (de) | 1990-08-16 |
Family
ID=9318733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686200696T Expired - Lifetime DE3672519D1 (de) | 1985-04-26 | 1986-04-23 | Planares halbleiterbauteil mit einer schutzringstruktur, klasse solcher bauteile und herstellungsverfahren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5028548A (de) |
EP (1) | EP0199424B1 (de) |
JP (1) | JPH0799747B2 (de) |
DE (1) | DE3672519D1 (de) |
FR (1) | FR2581252B1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2201543A (en) * | 1987-02-25 | 1988-09-01 | Philips Electronic Associated | A photosensitive device |
US5032878A (en) * | 1990-01-02 | 1991-07-16 | Motorola, Inc. | High voltage planar edge termination using a punch-through retarding implant |
US5266831A (en) * | 1991-11-12 | 1993-11-30 | Motorola, Inc. | Edge termination structure |
US5677562A (en) * | 1996-05-14 | 1997-10-14 | General Instrument Corporation Of Delaware | Planar P-N junction semiconductor structure with multilayer passivation |
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
JP3632344B2 (ja) * | 1997-01-06 | 2005-03-23 | 日産自動車株式会社 | 半導体装置 |
EP1029358A1 (de) * | 1997-11-03 | 2000-08-23 | Infineon Technologies AG | Hochspannungsfeste randstruktur für halbleiterbauelemente |
GB2373634B (en) * | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
GB2403850B (en) * | 2000-10-31 | 2005-05-11 | Fuji Electric Co Ltd | Semiconductor device |
JP5011611B2 (ja) | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
DE10250608B4 (de) * | 2002-10-30 | 2005-09-29 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung |
US7595542B2 (en) * | 2006-03-13 | 2009-09-29 | Fairchild Semiconductor Corporation | Periphery design for charge balance power devices |
US7592668B2 (en) * | 2006-03-30 | 2009-09-22 | Fairchild Semiconductor Corporation | Charge balance techniques for power devices |
US7541247B2 (en) * | 2007-07-16 | 2009-06-02 | International Business Machines Corporation | Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8227855B2 (en) * | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
US8148749B2 (en) * | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
US8049276B2 (en) * | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
JP5558393B2 (ja) * | 2011-03-10 | 2014-07-23 | 株式会社東芝 | 半導体装置 |
JP2012195519A (ja) * | 2011-03-18 | 2012-10-11 | Kyoto Univ | 半導体素子及び半導体素子の製造方法 |
WO2013021727A1 (ja) * | 2011-08-05 | 2013-02-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US8872278B2 (en) | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
CN108475701B (zh) * | 2015-11-27 | 2021-03-30 | Abb电网瑞士股份公司 | 面积高效的浮置场环终端 |
US10424635B2 (en) * | 2016-04-06 | 2019-09-24 | Littelfuse, Inc. | High voltage semiconductor device with guard rings and method associated therewith |
CN107611165A (zh) * | 2016-07-12 | 2018-01-19 | 北大方正集团有限公司 | 分压环的制备方法、分压环和功率晶体管 |
JP7190256B2 (ja) | 2018-02-09 | 2022-12-15 | ローム株式会社 | 半導体装置 |
US10361276B1 (en) * | 2018-03-17 | 2019-07-23 | Littelfuse, Inc. | Embedded field plate field effect transistor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2108781B1 (de) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
JPS523277B2 (de) * | 1973-05-19 | 1977-01-27 | ||
FR2480036A1 (fr) * | 1980-04-04 | 1981-10-09 | Thomson Csf | Structure de dispositif a semi-conducteur a anneau de garde et a fonctionnement unipolaire |
DE3131611A1 (de) * | 1981-08-10 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Epitaxialer transistor |
US4573064A (en) * | 1981-11-02 | 1986-02-25 | Texas Instruments Incorporated | GaAs/GaAlAs Heterojunction bipolar integrated circuit devices |
JPS5976466A (ja) * | 1982-10-25 | 1984-05-01 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
GB2131603B (en) * | 1982-12-03 | 1985-12-18 | Philips Electronic Associated | Semiconductor devices |
JPS59189679A (ja) * | 1983-04-13 | 1984-10-27 | Hitachi Ltd | ダイオ−ド |
JPS6012859A (ja) * | 1983-06-20 | 1985-01-23 | Ricoh Co Ltd | フアクシミリ・複写機・ソ−タ複合装置 |
-
1985
- 1985-04-26 FR FR8506410A patent/FR2581252B1/fr not_active Expired
-
1986
- 1986-04-23 JP JP61092444A patent/JPH0799747B2/ja not_active Expired - Lifetime
- 1986-04-23 EP EP86200696A patent/EP0199424B1/de not_active Expired - Lifetime
- 1986-04-23 DE DE8686200696T patent/DE3672519D1/de not_active Expired - Lifetime
-
1990
- 1990-06-26 US US07/544,809 patent/US5028548A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0199424B1 (de) | 1990-07-11 |
JPH0799747B2 (ja) | 1995-10-25 |
FR2581252A1 (fr) | 1986-10-31 |
EP0199424A3 (en) | 1987-01-21 |
FR2581252B1 (fr) | 1988-06-10 |
US5028548A (en) | 1991-07-02 |
EP0199424A2 (de) | 1986-10-29 |
JPS61248555A (ja) | 1986-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |