DE3641688A1 - Method of quality testing an electrode layer on a semiconductor component - Google Patents

Method of quality testing an electrode layer on a semiconductor component

Info

Publication number
DE3641688A1
DE3641688A1 DE19863641688 DE3641688A DE3641688A1 DE 3641688 A1 DE3641688 A1 DE 3641688A1 DE 19863641688 DE19863641688 DE 19863641688 DE 3641688 A DE3641688 A DE 3641688A DE 3641688 A1 DE3641688 A1 DE 3641688A1
Authority
DE
Germany
Prior art keywords
electrode layer
depth
ball
copper
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19863641688
Other languages
German (de)
Other versions
DE3641688C2 (en
Inventor
Kazumichi Machida
Jitsuho Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60291084A external-priority patent/JPS62150730A/en
Priority claimed from JP61017348A external-priority patent/JPS62174936A/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3641688A1 publication Critical patent/DE3641688A1/en
Application granted granted Critical
Publication of DE3641688C2 publication Critical patent/DE3641688C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
    • G01N3/40—Investigating hardness or rebound hardness
    • G01N3/42—Investigating hardness or rebound hardness by performing impressions under a steady load by indentors, e.g. sphere, pyramid
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Abstract

In a method of quality testing an electrode layer on a semiconductor component to which a contact wire is to be bonded, a ball made of a material which is identical or similar to the material of the contact wire is pressed against the electrode layer using a bonding capillary and the depth of the indentation produced in the electrode layer as a consequence of this pressure is measured.

Description

Die vorliegende Erfindung betrifft ein Verfahren zur Qualitätsprüfung einer Elektrode eines Halbleiter­ bauelements, wie eines ICs (integrierte Schaltung) und eines diskreten oder Einzelhalbleiter-Bauelements, welches über einen Metalldraht an eine Leitung, bei­ spielsweise eine Leiterbahn, angeschlossen werden soll.The present invention relates to a method for the quality inspection of an electrode of a semiconductor components, such as an IC (integrated circuit) and a discrete or single semiconductor device, which is connected to a line via a metal wire for example a conductor track to be connected.

Die Fig. 1 zeigt ein Verfahren zum Bondieren eines Drahtes auf einem Halbleiterbauelement, d. h. zum Her­ stellen einer Kontaktverbindung zwischen Draht und Halbleiterbauelement. Diese Drahtbondierung oder Draht­ kontaktierung soll eine auf einem Halbleiterchip 2 ausgebildete Aluminiumelektrode 3 mittels eines Gold­ drahts 1 mit einer Leitung 4 aus einer Kupferlegierung verbinden, wobei diese Leitung einer Oberflächenbe­ handlung, wie beispielsweise einer metallischen Über­ ziehung mit Silber, unterzogen worden ist und ein haarröhrenförmiger Körper, d. h. ein Kapillarteil, das als Bondierungswerkzeug dient, verwendet wird. Fig. 1 shows a method of bonding a wire to a semiconductor device, that is, for Her provide a contact connection between wire and semiconductor device. This wire bonding or wire contacting is intended to connect an aluminum electrode 3 formed on a semiconductor chip 2 by means of a gold wire 1 to a line 4 made of a copper alloy, this line having been subjected to a surface treatment, such as a metallic coating with silver, and a hair-shaped tube Body, ie a capillary part that serves as a bonding tool is used.

Um eine solche Verbindung zu erzielen, wird ein Ende des Golddrahtes 1 durch eine Lichtbogenheizein­ wirkung zum Fließen bzw. Schmelzen gebracht, woraufhin man es zu einer Kugel 1 a festwerden oder erstarren läßt. Anschließend wird die Kugel 1 a durch Kugelthermokom­ pression an die Aluminiumelektrode angeheftet (Fig. 1a und 1b). Daraufhin wird der Draht 1 abgeleitet und durch eine Steppkontaktierung (Fig. 1c und 1d) mit der Leitung 4 verbunden. Häufig wird zum Bondieren des Drahtes 1 das Thermoschallverfahren angewendet. In order to achieve such a connection, one end of the gold wire 1 is brought to flow or melting by an arc heating effect, whereupon it is solidified or solidified into a ball 1 a . Subsequently, the ball 1 a is attached by ball thermocompression to the aluminum electrode ( Fig. 1a and 1b). The wire 1 is then drained off and connected to the line 4 by a step contact (FIGS . 1c and 1d). The thermal sound method is often used to bond the wire 1 .

Da das für den Draht benutzte Gold teuer ist und eine langfristige Zuverlässigkeit und Dauerhaftigkeit der Verbindung zwischen Golddraht und Aluminiumelektrode nicht ausreichend hoch sind, werden im folgenden ver­ schiedene alternative Materialien und Bondierungstech­ niken näher untersucht.Since the gold used for the wire is expensive and long-term reliability and durability the connection between gold wire and aluminum electrode are not sufficiently high, are ver different alternative materials and bonding tech niken examined more closely.

Ein in Betracht zu ziehendes Ersatzmaterial ist Kupfer. Ein mit Kupfer verbundenes Problem besteht jedoch in der schlechteren Bondierkontaktierfähigkeit von Kupferdrähten an Aluminiumelektroden. Eine Erhöhung der Leistung einer Ultraschallschwingung bei einem Versuch, die Bondierung zu unterstützen, wird Aluminium, wie durch die Bezugszahl 3 a in Fig. 2 angedeutet, nach außen getrieben. In diesem Fall kann es dazu kommen, daß die Kugel 10 a des Kupferdrahtes 10 auf den Halb­ leiterchip stößt. Auf diese Weise könnten die Elek­ trode 3 und der Halbleiterchip 2 beschädigt oder zer­ stört werden.A substitute material to be considered is copper. A problem associated with copper, however, is the poorer bondability of copper wires to aluminum electrodes. An increase in the power of an ultrasonic vibration in an attempt to support the bonding is driven out of aluminum, as indicated by the reference number 3 a in FIG. 2. In this case, it can happen that the ball 10 a of the copper wire 10 strikes the semiconductor chip. In this way, the electrode 3 and the semiconductor chip 2 could be damaged or destroyed.

Um dieses Problem zu lösen, könnten unterschied­ liche Maßnahmen getroffen werden. Beispielsweise könnten die Qualität, d. h. die Eigenschaften, des Aluminiums eingestellt werden. Jedoch ist es im Hin­ blick auf die Tatsache, daß Halbleiterbauelemente zumeist in Massenproduktion gefertigt werden, not­ wendig, die Qualität der Bondierfähigkeit der Alumi­ niumelektrodenschicht zu prüfen und auszuwerten und die gewünschte Qualität, d. h. die gewünschten Eigen­ schaften, aufrecht zu erhalten.To solve this problem, a difference could be made measures are taken. For example could the quality, d. H. the properties of the Aluminum can be adjusted. However, it is in the way look at the fact that semiconductor devices mostly mass-produced, not agile, the quality of the bonding ability of the Alumi to check and evaluate nium electrode layer and the desired quality, d. H. the desired custom manage to maintain.

Für eine genaue Bewertung der Bondierfähigkeit müssen verschiedene Prüfungen oder Tests durchgeführt werden, einschließlich eines Tests bezüglich der Bondierkontaktfestigkeit und einer Untersuchung, mit der festgestellt wird, wie die Legierungsschicht aus­ gebildet ist und wie die Aluminiumschicht deformiert und ausgetrieben oder weggedrückt wird. Diese Unter­ suchung kann erfolgen, indem der Querschnitt des bondierten Bereichs betrachtet wird. Die Bondier­ kontaktfestigkeit kann mittels eines Schlag- oder Stoßtests (push test) zur Messung der Scherfestigkeit des bondierten Bereichs gemessen werden. 0,392 N (40 gf=gram force) oder auch eine größere Kraft entspricht einem in typischer Weise erforderlichen Schwellwert der Bruchbelastung. Zur Prüfung der Elek­ trode zum Zweck einer Qualitätskontrolle während der Massenproduktion ist jedoch ein einfacheres Testverfahren wünschenswert.For a precise evaluation of the bonding ability have to do various tests including a test on the Bonding contact strength and an investigation, with which is determined as the alloy layer  is formed and how the aluminum layer deforms and driven out or pushed away. This sub Search can be done by using the cross section of the bonded area is considered. The Bondier contact strength can be achieved by means of an impact or Push test to measure the shear strength of the bonded area. 0.392 N. (40 gf = gram force) or a larger force corresponds to one typically required Breaking load threshold. To check the elec trode for the purpose of quality control during however, mass production is an easier one Test procedure desirable.

Ein bekanntes Verfahren zur Qualitätsprüfung von Aluminium im Hinblick auf die Bondierfähigkeit besteht in der Messung der Härte (Knoop-Härte). Jedoch wird diese Messung für eine von der tatsäch­ lichen Bondierung verschiedene Situation durchge­ führt. Darüber hinaus ist der Meßfehler für eine sehr geringe Last beträchtlich. Die sehr geringe oder leichte Last muß verwendet werden, da die Last bei der Bondierung sehr gering ist, und die Messung differiert in Abhängigkeit von der Größe der Last.A well-known quality inspection procedure of aluminum in terms of bondability consists in measuring the hardness (Knoop hardness). However, this measurement is for one of the actual different situation leads. In addition, the measurement error for one very light load considerably. The very minor or light load must be used as the load when bonding is very low, and the measurement differs depending on the size of the load.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Verfahren zur Qualitätsprüfung anzu­ geben, welches einen geringeren Fehler aufweist.The object of the present invention is to achieve this to adopt a quality inspection procedure give which has a lower error.

Die Erfinder fanden heraus, daß, wenn eine Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bon­ dierkapillare gegen eine Elektrode gepreßt wird, die Tiefe der resultierenden Einbeulung der Elektrode eine gute Korrelation, d. h. eine korrelierte Bezie­ hung, zur Bondierfähigkeit aufweist. The inventors found that when a ball from an identical to the material of the contact wire or similar material using a receipt the capillary is pressed against an electrode which Depth of the resulting dent in the electrode a good correlation, i. H. a correlated relationship hung, for bonding ability.  

Es wird infolgedessen davon ausgegangen, daß, wenn man die Tiefe einer infolge des Anpressens einer Kupferkugel unter Benutzung einer Bondierkapil­ lare entstehenden Einbeulung der Elektrode mißt, die Bondierfähigkeit der Elektrode genau geprüft ist.As a result, it is believed that if you look at the depth of one as a result of pressing a copper ball using a bond cap The resulting dent in the electrode measures the Bondability of the electrode has been carefully checked.

Entsprechend der Erfindung wird ein Verfahren zur Qualitätsprüfung einer Elektrodenschicht eines Halbleiterbauelementes, auf welches ein Kontaktdraht bondiert werden soll, angegeben, welches Verfahren als Verfahrensschritte aufweist: Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bon­ dierkapillare gegen die Elektrodenschicht und Messen der Tiefe einer infolge dieses Anpressens entstehen­ den Einbeulung der Elektrodenschicht.According to the invention, a method for quality inspection of an electrode layer Semiconductor component on which a contact wire which method is to be bonded as process steps comprises: pressing a ball from an identical to the material of the contact wire or similar material using a receipt capillary against the electrode layer and measuring the depth one arise as a result of this pressing the dent of the electrode layer.

Im folgenden wird die Erfindung an Hand der Zeichnungen näher erläutert. Es zeigen:In the following the invention is based on the Drawings explained in more detail. Show it:

Fig. 1 in schematischer Weise, wie die Draht­ bondierung durchgeführt wird, Fig. 1 shows schematically how the wire bonding is performed,

Fig. 2 die Deformation einer Elektrodenschicht, Fig. 2 shows the deformation of an electrode layer,

Fig. 3 wie eine Kugel während eines Verfah­ rensschritts der Qualitätsprüfung gemäß der Erfindung gegen eine Elektrodenschicht gepreßt wird, Figure 3 is pressed as a ball during a procedural rensschritts quality inspection according to the invention with an electrode layer.,

Fig. 4 einen Querschnittsteil der Elektroden­ schicht, die in diesem Teil eingebeult ist, Fig. 4 is a cross-sectional layer of the electrode, which is dented in this part,

Fig. 5 einen Bereich für zufriedenstellende Bedingungen in Abhängigkeit von Last und Tiefe der Einbeulung und Fig. 5 shows a range for satisfactory conditions depending on the load and depth of the dent and

Fig. 6 einen Bereich für zufriedenstellende Bedingungen in Abhängigkeit der Amplitude der Ultra­ schallschwingung und der Tiefe der Einbeulung. Fig. 6 shows a range for satisfactory conditions depending on the amplitude of the ultrasonic vibration and the depth of the dent.

In Fig. 3 ist ein Ausführungsbeispiel der Er­ findung dargestellt. Den in den Fig. 1 und 2 verwen­ deten Bezugszahlen identische Bezugszahlen dieser Fig. 3 bezeichnen identische oder ähnliche Teile.In Fig. 3 an embodiment of the invention is shown. The reference numerals used in FIGS . 1 and 2 are identical reference numerals of FIG. 3 designating identical or similar parts.

Entsprechend diesem Ausführungsbeispiel wird eine Kugel 14 aus einem dem Material des Drahtes identischen oder ähnlichen Material unter Benutzung einer Kapillare 5 gegen eine dünne Elektrodenschicht 3 gepreßt, die sich auf einem Halbleiterchip 2 (Fig. 3) befindet. Das Ausmaß der resultierenden Deformation, d. h. die Tiefe D der resultierenden Einbeulung oder Einbuchtung (Fig. 4) wird gemessen.According to this exemplary embodiment, a ball 14 made of a material which is identical or similar to the material of the wire is pressed using a capillary 5 against a thin electrode layer 3 which is located on a semiconductor chip 2 ( FIG. 3). The extent of the resulting deformation, ie the depth D of the resulting dent or indentation ( FIG. 4) is measured.

Die Tiefe dieser Einbeulung kann gemessen werden, indem mit Hilfe eines Mikroskops der in Fig. 4 darge­ stellte Querschnitt, der durch Schleifen des Bereichs B der zu bondierenden Elektrode hergestellt wird, unter­ sucht wird. Die mit dem Mikroskop beobachtete Höhen­ differenz zwischen dem Bondierungsbereich B und den ihn umgebenden Bereichen S, d. h. den Bereichen, die nicht zu kontaktieren sind, entspricht der Tiefe D der Einbeulung.The depth of this indentation can be measured by using a microscope to examine the cross section shown in FIG. 4, which is produced by grinding the area B of the electrode to be bonded. The height difference observed with the microscope between the bonding area B and the areas S surrounding it , ie the areas that are not to be contacted, corresponds to the depth D of the dent.

Die Bondierfähigkeit der Schicht wird aus dieser Tiefe D bewertet und geprüft.The bondability of the layer is assessed and checked from this depth D.

In einem Beispiel wurde ermittelt, daß bei Anpres­ sen einer reinen Kupferkugel 14 eines Durchmessers von 70 bis 75 µm mit einer Kraft von 1,96 bis 2,94 N (200 bis 300 gf) an eine Elektrode 3 und bei einer resultierenden Tiefe der Einbeulung innerhalb eines Bereichs von 0,1 bis 0,6 µm der Kupferdraht 10 gut an die Elektrode 3 bondiert werden kann. Dies ist in Fig. 5 dargestellt, in welcher der schraffierte Bereich den Bereich für solche Bedingungen anzeigt, für die eine gute Bondierfähigkeit und Kontaktierung erzielt wird. Liegt entsprechend dieser Darstellung die ge­ messene Tiefe der Einbeulung innerhalb des Bereichs von 0,1 bis 0,6 µm, so wird angenommen, daß die Bondierfähigkeit der Schicht gut ist. Befindet sich die gemessene Tiefe außerhalb dieses Bereichs, so wird die Bondierfähigkeit nicht mehr als gut ange­ sehen.In one example it was found that when pressing a pure copper ball 14 with a diameter of 70 to 75 µm with a force of 1.96 to 2.94 N (200 to 300 gf) against an electrode 3 and with a resulting depth of the dent the copper wire 10 can be bonded well to the electrode 3 within a range of 0.1 to 0.6 μm. This is shown in FIG. 5, in which the hatched area indicates the area for those conditions for which good bonding and contacting is achieved. According to this representation, the measured depth of the dent is within the range of 0.1 to 0.6 µm, so it is assumed that the bonding ability of the layer is good. If the measured depth is outside this range, the bonding ability is no longer considered good.

Wird die Bondierfähigkeit nicht für gut befun­ den, so kann eine Maßnahme zur Änderung der Eigenschaft oder der Qualität der Aluminiumschicht der Halbleiter­ bauelemente, die in Massenproduktion hergestellt wer­ den, getroffen werden, so daß die nächstfolgend pro­ duzierten Halbleiterbauelemente eine Aluminiumschicht mit einer guten Bondierfähigkeit aufweisen. Die Eigen­ schaften und die Qualität der Aluminiumschicht kann durch die Bedingungen, unter denen das Aluminium ange­ lagert wird, d. h. beispielsweise die Anlagerungs- oder Abscheidungsrate und die Feinheit oder das Ausmaß des eingestellten Vakuums verändert werden. Wird beispiels­ weise die Anlagerungsrate vermindert, so wird die Alu­ miniumschicht härter und kann infolgedessen nur mehr schwerer deformiert werden.If the bondability is not good a measure to change the property or the quality of the aluminum layer of the semiconductors components that are mass-produced the, are taken, so that the next one per induced semiconductor devices an aluminum layer with good bonding ability. The own and the quality of the aluminum layer by the conditions under which the aluminum is indicated is stored, d. H. for example the investment or Deposition rate and the fineness or extent of set vacuum can be changed. For example if the deposition rate is reduced, the aluminum minium layer harder and as a result can only do more are more difficult to deform.

Eine andere Maßnahme, die alternativ oder auch zusätzlich zu der oben erwähnten Maßnahme getroffen werden kann, besteht in der Änderung der Bedingungen eines nach der Bondierung durchgeführten Prozesses. Beispielsweise können die Bedingungen für ein Sintern der Bondiergrenzflächen so verändert werden, daß eine Abweichung von der gewünschten Bondierfähigkeit kom­ pensiert und auf diese Weise die Beschaffenheit der bondierten Bereiche optimiert wird.Another measure, the alternative or also in addition to the measure mentioned above change of conditions a process carried out after bonding. For example, the conditions for sintering the bonding interfaces are changed so that a Deviation from the desired bonding ability com pens and in this way the nature of the bonded areas is optimized.

In einem weiteren Ausführungsbeispiel der vor­ liegenden Erfindung werden der Kupferkugel, während sie gegen die Elektrode gedrückt oder gepreßt wird, Ultraschallwellen oder -schwingungen zugeführt. In diesem Fall kann die Druckkraft vermindert werden. Beispielsweise ist ermittelt worden, daß, wenn eine reine Kupferkugel eines Durchmessers von 70 bis 75 µm mit einer Druckkraft von ungefähr 1,47 N (150 gf) gegen eine Elektrode gepreßt wird, während eine Ultraschallschwingung von 60 kHz mit einer Amplitude von 0,07 bis 0,14 µm bei einer Temperatur von 350°C angewandt wird, und wenn die Tiefe der resultierenden Einbeulung innerhalb eines Bereiches von 0,1 bis 0,6 µm liegt, der Kupferdraht 10 gut an die Elektrode 3 bondiert werden kann. Dies ist in Fig. 6 dargestellt, in der der schraffierte Bereich den Bereich für Be­ dingungen darstellt, bei denen die gute Kontaktier­ fähigkeit erzielt wird. Liegt entsprechend dieser Darstellung die gemessene Tiefe in der Einbeulung im Bereich von 0,1 bis 0,6 µm, so wird davon ausgegangen, daß die Bondierfähigkeit gut ist. Liegt jedoch die gemessene Tiefe außerhalb dieses Bereichs, so wird die Bondierfähigkeit oder Kontaktfähigkeit als nicht gut angesehen.In a further embodiment of the present invention, the copper ball is supplied with ultrasonic waves or vibrations while it is pressed or pressed against the electrode. In this case, the pressure force can be reduced. For example, it has been found that when a pure copper ball of 70 to 75 µm in diameter is pressed against an electrode with a compressive force of approximately 1.47 N (150 gf), an ultrasonic vibration of 60 kHz with an amplitude of 0.07 is pressed to 0.14 µm at a temperature of 350 ° C, and if the depth of the resulting dent is within a range of 0.1 to 0.6 µm, the copper wire 10 can be well bonded to the electrode 3 . This is shown in Fig. 6, in which the hatched area represents the area for conditions in which the good contacting ability is achieved. If, according to this representation, the measured depth in the indentation is in the range from 0.1 to 0.6 μm, it is assumed that the bonding ability is good. However, if the measured depth is outside this range, the bondability or contactability is not considered to be good.

Im letzteren Fall einer nicht für gut befundenen Bondierfähigkeit können eine oder mehrere den in Ver­ bindung mit dem ersten Ausführungsbeispiel beschrie­ benen Maßnahmen ähnliche Maßnahmen ergriffen werden.In the latter case, one that was not approved Bondability can include one or more of those described in Ver described with the first embodiment similar measures are taken.

Wie aus der Beschreibung hervorgeht, wird im erfindungsgemäßen Verfahren die Messung unter einer Bedingung durchgeführt, die der Bedingung, bei der die tatsächliche Bondierung erfolgt, ähnlich ist. Infolgedessen ist die Bewertung oder Qualitätsprü­ fung genau und zuverlässig.As is clear from the description, inventive method, the measurement under a Condition carried out that the condition at which the actual bond is made is similar. As a result, the rating or quality check accurate and reliable.

Claims (8)

1. Verfahren zur Qualitätsprüfung einer Elektroden­ schicht eines Halbleiterbauelements, auf welches ein Kontaktdraht bondiert werden soll, gekennzeichnet durch die folgenden Verfahrensschritte:
Anpressen einer Kugel aus einem dem Material des Kontaktdrahtes identischen oder ähnlichen Material unter Verwendung einer Bondierkapillare gegen die Elektrodenschicht und
Messen der Tiefe einer infolge dieses Anpressens entstehenden Einbeulung der Elektrodenschicht.1. Method for quality inspection of an electrode layer of a semiconductor component to which a contact wire is to be bonded, characterized by the following method steps:
Pressing a ball made of a material identical or similar to the material of the contact wire using a bonding capillary against the electrode layer and
Measure the depth of a dent in the electrode layer resulting from this pressing. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Kugel, während sie gegen die Elektrodenschicht gepreßt wird, eine Ultraschallschwingung zugeführt wird.2. The method according to claim 1, characterized, that the ball while hitting the electrode layer is pressed, an ultrasonic vibration is supplied becomes. 3. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Elektrodenschicht aus Aluminium gebildet ist.3. The method according to claim 1, characterized, that the electrode layer is made of aluminum. 4. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß der Kontaktdraht aus Kupfer oder Kupferlegierung hergestellt ist. 4. The method according to claim 1, characterized, that the contact wire made of copper or copper alloy is made.   5. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß die Elektrodenschicht aus Aluminium, der Kontakt­ draht aus Kupfer oder Kupferlegierung und die Kugel aus Kupfer gebildet sind, wobei diese Kugel einen Durchmesser von ungefähr 70 bis 75 µm aufweist und mit einer Kraft von 1,96 bis 2,94 N (200 bis 300 gf) angepreßt wird.5. The method according to claim 1, characterized, that the electrode layer made of aluminum, the contact copper or copper alloy wire and the ball are made of copper, this ball a Has a diameter of about 70 to 75 microns and with a force of 1.96 to 2.94 N (200 to 300 gf) is pressed. 6. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß diese Messung so durchgeführt wird, daß festgestellt wird, ob die Tiefe der Einbeulung innerhalb eines Be­ reichs von 0,1 bis 0,6 µm liegt oder nicht.6. The method according to claim 5, characterized, that this measurement is carried out in such a way that it is established is whether the depth of the dent within a Be ranges from 0.1 to 0.6 µm or not. 7. Verfahren nach Anspruch 5, dadurch gekennzeichnet, daß eine Ultraschallschwingung von ungefähr 60 kHz mit einer Amplitude von 0,07 bis 0,14 µm angewandt wird.7. The method according to claim 5, characterized, that an ultrasonic vibration of about 60 kHz with an amplitude of 0.07 to 0.14 µm is applied. 8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß diese Messung so durchgeführt wird, daß festgestellt wird, ob die Tiefe der Einbeulung innerhalb eines Be­ reichs von 0,1 bis 0,6 µm liegt oder nicht.8. The method according to claim 7, characterized, that this measurement is carried out in such a way that it is established is whether the depth of the dent within a Be ranges from 0.1 to 0.6 µm or not.
DE19863641688 1985-12-24 1986-12-06 Method of quality testing an electrode layer on a semiconductor component Granted DE3641688A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60291084A JPS62150730A (en) 1985-12-24 1985-12-24 Evaluation of semiconductor device
JP61017348A JPS62174936A (en) 1986-01-28 1986-01-28 Evaluation of semiconductor device

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DE3641688A1 true DE3641688A1 (en) 1987-07-02
DE3641688C2 DE3641688C2 (en) 1989-10-12

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DE102013222439B4 (en) 2013-11-05 2023-10-12 F&S Bondtec Semiconductor GmbH Measuring compliance

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DE102007030951B4 (en) * 2007-07-04 2011-05-12 Fachhochschule Augsburg Device for the determination of mechanical properties of an object to be examined

Non-Patent Citations (1)

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Title
Copper Wire Bonding, John Kurtz a. all. Fairchaild Semiconductor Corp. South Portland, Maine *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013222439B4 (en) 2013-11-05 2023-10-12 F&S Bondtec Semiconductor GmbH Measuring compliance

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