DE3586478D1 - Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet. - Google Patents

Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet.

Info

Publication number
DE3586478D1
DE3586478D1 DE8585901604T DE3586478T DE3586478D1 DE 3586478 D1 DE3586478 D1 DE 3586478D1 DE 8585901604 T DE8585901604 T DE 8585901604T DE 3586478 T DE3586478 T DE 3586478T DE 3586478 D1 DE3586478 D1 DE 3586478D1
Authority
DE
Germany
Prior art keywords
isfet
pct
oxide surface
producing
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585901604T
Other languages
English (en)
Other versions
DE3586478T2 (de
Inventor
Nicolaas Reinhoudt
Leonard Pennings
Gerardus Talma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Priva Agro Holding BV
Original Assignee
Priva Agro Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Priva Agro Holding BV filed Critical Priva Agro Holding BV
Publication of DE3586478D1 publication Critical patent/DE3586478D1/de
Application granted granted Critical
Publication of DE3586478T2 publication Critical patent/DE3586478T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Organic Insulating Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)
  • Non-Adjustable Resistors (AREA)
  • Formation Of Insulating Films (AREA)
DE8585901604T 1984-03-22 1985-03-22 Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet. Expired - Lifetime DE3586478T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8400916A NL8400916A (nl) 1984-03-22 1984-03-22 Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet.
PCT/NL1985/000013 WO1985004480A1 (en) 1984-03-22 1985-03-22 Method of producing an isfet and same isfet

Publications (2)

Publication Number Publication Date
DE3586478D1 true DE3586478D1 (de) 1992-09-17
DE3586478T2 DE3586478T2 (de) 1993-02-25

Family

ID=19843690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585901604T Expired - Lifetime DE3586478T2 (de) 1984-03-22 1985-03-22 Verfahren zur herstellung eines isfet und nach diesem verfahren hergestellte isfet.

Country Status (7)

Country Link
US (1) US4735702A (de)
EP (1) EP0177544B1 (de)
JP (1) JPS61501726A (de)
AT (1) ATE79472T1 (de)
DE (1) DE3586478T2 (de)
NL (1) NL8400916A (de)
WO (1) WO1985004480A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602242A (nl) * 1986-09-05 1988-04-05 Stichting Ct Voor Micro Elektr Werkwijze voor het vervaardigen van een refet of een chemfet, en de vervaardigde refet of chemfet.
JPS63131056A (ja) * 1986-11-20 1988-06-03 Terumo Corp Ｆｅｔ電極
US4859538A (en) * 1986-11-20 1989-08-22 Ribi Hans O Novel lipid-protein compositions and articles and methods for their preparation
US5074977A (en) * 1987-05-05 1991-12-24 The Washington Technology Center Digital biosensors and method of using same
WO1988008972A1 (en) * 1987-05-05 1988-11-17 The Washington Technology Center A system employing a biosensor to monitor a characteristic of a select component in a medium
IT1215491B (it) * 1987-05-15 1990-02-14 Enricerche Spa Biosensore con membrana enzimatica legata chimicamente a un dispositivo semiconduttore.
IT1222121B (it) * 1987-07-24 1990-08-31 Eniricerche Spa Sensore per ioni contenente una membrana organica selettiva
US4921591A (en) * 1987-10-13 1990-05-01 Taiyo Yuden Co., Ltd. Ion sensors and their divided parts
IT1228120B (it) * 1988-12-23 1991-05-28 Eniricerche Spa Procedimento per ottenere un sensore multifunzionale a membrana ionoselettiva
CA2047991A1 (en) * 1991-02-04 1992-08-05 John Musacchio Solid contact system for potentiometric sensors
NL194721C (nl) * 1992-10-15 2003-01-07 Priva Agro Holding Bv Anionselectief membraan en een daarvan voorziene sensor.
US5958201A (en) * 1996-08-26 1999-09-28 Dade Behring Inc. Sodium ion-selective-electrode membrane having extended uselife
TW465055B (en) 2000-07-20 2001-11-21 Univ Nat Yunlin Sci & Tech Method and apparatus for measurement of temperature parameter of ISFET using amorphous silicon hydride as sensor membrane
FR2813208B1 (fr) * 2000-08-30 2003-03-28 Commissariat Energie Atomique Structure complexante, dispositif et procede de traitement d'effluents liquides
GB0022360D0 (en) * 2000-09-13 2000-10-25 British Nuclear Fuels Plc Improvemnts in and related to sensors
EP1711803A1 (de) 2004-02-06 2006-10-18 Micronas GmbH Sensor und verfahren zu dessen herstellung
US7829150B2 (en) * 2004-06-17 2010-11-09 Cornell Research Foundation, Inc. Growth of inorganic thin films using self-assembled monolayers as nucleation sites
US20080108164A1 (en) * 2006-11-06 2008-05-08 Oleynik Vladislav A Sensor System and Method
CN102132361B (zh) * 2008-09-02 2015-03-25 丰田自动车株式会社 压粉磁芯用粉末、压粉磁芯和它们的制造方法
DE102015121344B4 (de) * 2015-12-08 2023-11-02 Infineon Technologies Austria Ag Halbleitervorrichtung und verfahren zu ihrer herstellung
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2019099C3 (de) * 1970-04-21 1975-11-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung eines stabilen Oberflachenschutzes fur Halbleiterbauelemente
US4146585A (en) * 1977-03-02 1979-03-27 Union Carbide Corporation Process for preparing silane grafted polymers
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
JPS5825221B2 (ja) * 1977-12-12 1983-05-26 株式会社クラレ Ｆｅｔ比較電極
JPS5853745A (ja) * 1981-09-28 1983-03-30 Hitachi Ltd ２次元電気泳動装置
JPS58103656A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 電気泳動用装置
US4476003A (en) * 1983-04-07 1984-10-09 The United States Of America As Represented By The United States Department Of Energy Chemical anchoring of organic conducting polymers to semiconducting surfaces
JPS59210356A (ja) * 1983-05-13 1984-11-29 Kuraray Co Ltd トリグリセライドセンサ
JPS60177256A (ja) * 1984-02-23 1985-09-11 Shimadzu Corp イオンセンサ−

Also Published As

Publication number Publication date
WO1985004480A1 (en) 1985-10-10
US4735702A (en) 1988-04-05
NL8400916A (nl) 1985-10-16
JPS61501726A (ja) 1986-08-14
ATE79472T1 (de) 1992-08-15
DE3586478T2 (de) 1993-02-25
EP0177544A1 (de) 1986-04-16
EP0177544B1 (de) 1992-08-12

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