DE3586040D1 - Praezisionskondensator vom mos-typ hohen wertes. - Google Patents

Praezisionskondensator vom mos-typ hohen wertes.

Info

Publication number
DE3586040D1
DE3586040D1 DE8585402316T DE3586040T DE3586040D1 DE 3586040 D1 DE3586040 D1 DE 3586040D1 DE 8585402316 T DE8585402316 T DE 8585402316T DE 3586040 T DE3586040 T DE 3586040T DE 3586040 D1 DE3586040 D1 DE 3586040D1
Authority
DE
Germany
Prior art keywords
high value
value precision
precision capacitor
capacitor
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585402316T
Other languages
English (en)
Inventor
Surinder Krishna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Application granted granted Critical
Publication of DE3586040D1 publication Critical patent/DE3586040D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8585402316T 1984-11-28 1985-11-27 Praezisionskondensator vom mos-typ hohen wertes. Expired - Fee Related DE3586040D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/676,033 US4639274A (en) 1984-11-28 1984-11-28 Method of making precision high-value MOS capacitors

Publications (1)

Publication Number Publication Date
DE3586040D1 true DE3586040D1 (de) 1992-06-17

Family

ID=24712948

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585402316T Expired - Fee Related DE3586040D1 (de) 1984-11-28 1985-11-27 Praezisionskondensator vom mos-typ hohen wertes.

Country Status (5)

Country Link
US (1) US4639274A (de)
EP (1) EP0183623B1 (de)
JP (1) JPH0691183B2 (de)
CA (1) CA1232361A (de)
DE (1) DE3586040D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
US4717680A (en) * 1985-10-16 1988-01-05 Harris Corporation Fabrication of vertical NPN and PNP bipolar transistors in monolithic substrate
NL8701357A (nl) * 1987-06-11 1989-01-02 Philips Nv Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag.
US5851871A (en) * 1987-12-23 1998-12-22 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing integrated capacitors in MOS technology
IT1224656B (it) * 1987-12-23 1990-10-18 Sgs Thomson Microelectronics Procedimento per la fabbricazione di condensatori integrati in tecnologia mos.
IT1237894B (it) * 1989-12-14 1993-06-18 Sgs Thomson Microelectronics Processo per la fabbricazione di circuiti integrati comprendenti componenti elettronici di due tipi diversi aventi ciascuno coppie di elettrodi ricavati dagli stessi strati di silicio policristallino e separati da dielettrici diversi
CA2023172A1 (en) * 1990-08-13 1992-02-14 Francois L. Cordeau Method to manufacture double-poly capacitors
US5434098A (en) * 1993-01-04 1995-07-18 Vlsi Techology, Inc. Double poly process with independently adjustable interpoly dielectric thickness
US5393691A (en) * 1993-07-28 1995-02-28 Taiwan Semiconductor Manufacturing Company Fabrication of w-polycide-to-poly capacitors with high linearity
US5338701A (en) * 1993-11-03 1994-08-16 Taiwan Semiconductor Manufacturing Company Method for fabrication of w-polycide-to-poly capacitors with high linearity
KR0137902B1 (en) * 1994-01-28 1998-04-27 Lg Semicon Co Ltd Mos transistor & manufacturing method thereof
US5554558A (en) * 1995-02-13 1996-09-10 Taiwan Semiconductor Manufacturing Company Method of making high precision w-polycide-to-poly capacitors in digital/analog process
US5547892A (en) * 1995-04-27 1996-08-20 Taiwan Semiconductor Manufacturing Company Process for forming stacked contacts and metal contacts on static random access memory having thin film transistors
US5804488A (en) * 1995-08-24 1998-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a tungsten silicide capacitor having a high breakdown voltage
US6133077A (en) * 1998-01-13 2000-10-17 Lsi Logic Corporation Formation of high-voltage and low-voltage devices on a semiconductor substrate
US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
US6420747B2 (en) 1999-02-10 2002-07-16 International Business Machines Corporation MOSCAP design for improved reliability
JP3887588B2 (ja) * 2002-08-30 2007-02-28 株式会社リガク Ｘ線回折による応力測定法
US8373215B2 (en) * 2010-10-25 2013-02-12 Texas Instruments Incorporated Zero temperature coefficient capacitor
CN103456616A (zh) * 2013-09-02 2013-12-18 上海华力微电子有限公司 制备栅氧层的工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249194A (en) * 1977-08-29 1981-02-03 Texas Instruments Incorporated Integrated circuit MOS capacitor using implanted region to change threshold
DE2743662A1 (de) * 1977-09-28 1979-04-05 Siemens Ag Ein-transistor-speicherelement und verfahren zu seiner herstellung
US4240195A (en) * 1978-09-15 1980-12-23 Bell Telephone Laboratories, Incorporated Dynamic random access memory
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
DE3032632A1 (de) * 1980-08-29 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung integrierter dynamischer ram-eintransistor-speicherzellen
US4373250A (en) * 1980-11-17 1983-02-15 Signetics Corporation Process for fabricating a high capacity memory cell
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
JPS59195859A (ja) * 1983-04-21 1984-11-07 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell

Also Published As

Publication number Publication date
CA1232361A (en) 1988-02-02
JPS61131557A (ja) 1986-06-19
EP0183623A2 (de) 1986-06-04
US4639274A (en) 1987-01-27
EP0183623A3 (en) 1988-12-07
JPH0691183B2 (ja) 1994-11-14
EP0183623B1 (de) 1992-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee