DE3581998D1 - Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung. - Google Patents

Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung.

Info

Publication number
DE3581998D1
DE3581998D1 DE8585112674T DE3581998T DE3581998D1 DE 3581998 D1 DE3581998 D1 DE 3581998D1 DE 8585112674 T DE8585112674 T DE 8585112674T DE 3581998 T DE3581998 T DE 3581998T DE 3581998 D1 DE3581998 D1 DE 3581998D1
Authority
DE
Germany
Prior art keywords
production
radiation detector
ultraviolet radiation
ultraviolet
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585112674T
Other languages
English (en)
Inventor
M Asif Khan
Richard G Schulze
Richard A Skogman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE3581998D1 publication Critical patent/DE3581998D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE8585112674T 1984-10-09 1985-10-07 Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung. Expired - Fee Related DE3581998D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/658,961 US4614961A (en) 1984-10-09 1984-10-09 Tunable cut-off UV detector based on the aluminum gallium nitride material system

Publications (1)

Publication Number Publication Date
DE3581998D1 true DE3581998D1 (de) 1991-04-11

Family

ID=24643466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585112674T Expired - Fee Related DE3581998D1 (de) 1984-10-09 1985-10-07 Ultraviolettstrahlungsdetektor und verfahren zu dessen herstellung.

Country Status (4)

Country Link
US (1) US4614961A (de)
EP (1) EP0177918B1 (de)
JP (1) JPH0614561B2 (de)
DE (1) DE3581998D1 (de)

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JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
JP2631285B2 (ja) * 1987-01-31 1997-07-16 豊田合成 株式会社 窒化ガリウム系化合物半導体の気相成長方法
JP2631286B2 (ja) * 1987-01-31 1997-07-16 豊田合成 株式会社 窒化ガリウム系化合物半導体の気相成長方法
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
US4967089A (en) * 1987-11-19 1990-10-30 Honeywell Inc. Pulsed optical source
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
US6830992B1 (en) * 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
CA2037198C (en) 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5047821A (en) * 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
DE4010570C5 (de) * 1990-04-02 2005-06-02 Siemens Ag Verfahren zur Überwachung von Feuerungsanlagen und Anordnung zur Durchführung des Verfahrens
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser
US6953703B2 (en) 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5182670A (en) * 1991-08-30 1993-01-26 Apa Optics, Inc. Narrow band algan filter
US5278435A (en) * 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
DE69333250T2 (de) * 1992-07-23 2004-09-16 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe
US6130147A (en) * 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
IT1277856B1 (it) * 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.
US5598014A (en) * 1995-02-28 1997-01-28 Honeywell Inc. High gain ultraviolet photoconductor based on wide bandgap nitrides
US5677538A (en) * 1995-07-07 1997-10-14 Trustees Of Boston University Photodetectors using III-V nitrides
US5987132A (en) * 1996-06-17 1999-11-16 Verifone, Inc. System, method and article of manufacture for conditionally accepting a payment method utilizing an extensible, flexible architecture
KR20010079856A (ko) * 1998-09-18 2001-08-22 후지 하루노스케 반도체 수광소자
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
US6483130B1 (en) 1999-03-24 2002-11-19 Honeywell International Inc. Back-illuminated heterojunction photodiode
US6137123A (en) * 1999-08-17 2000-10-24 Honeywell International Inc. High gain GaN/AlGaN heterojunction phototransistor
KR20000030069A (ko) * 1999-08-21 2000-06-05 이정욱 자외선 감지소자
WO2001084095A1 (en) * 2000-04-28 2001-11-08 Apa Optics, Inc. Device and method for ultraviolet radiation monitoring
US6787385B2 (en) 2001-05-31 2004-09-07 Midwest Research Institute Method of preparing nitrogen containing semiconductor material
US20070133001A1 (en) * 2001-09-12 2007-06-14 Honeywell International Inc. Laser sensor having a block ring activity
US7015457B2 (en) 2002-03-18 2006-03-21 Honeywell International Inc. Spectrally tunable detector
US7145165B2 (en) * 2001-09-12 2006-12-05 Honeywell International Inc. Tunable laser fluid sensor
US7470894B2 (en) * 2002-03-18 2008-12-30 Honeywell International Inc. Multi-substrate package assembly
US7196790B2 (en) * 2002-03-18 2007-03-27 Honeywell International Inc. Multiple wavelength spectrometer
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
US7282744B2 (en) * 2003-05-09 2007-10-16 Cree, Inc. III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
ITBA20030066A1 (it) * 2003-12-22 2005-06-23 I N F M Istituto Naz Per La Fisica Della Ma Sistema ottico di rivelazione della concentrazione di prodotti di combustione
US7531363B2 (en) * 2003-12-30 2009-05-12 Honeywell International Inc. Particle detection using fluorescence
US7586114B2 (en) * 2004-09-28 2009-09-08 Honeywell International Inc. Optical cavity system having an orthogonal input
US7902534B2 (en) * 2004-09-28 2011-03-08 Honeywell International Inc. Cavity ring down system having a common input/output port
US20060076502A1 (en) * 2004-10-05 2006-04-13 Apa Enterprises, Inc. Method and apparatus for a photodetector responsive over a selectable wavelength range
US7455565B2 (en) * 2004-10-13 2008-11-25 The Board Of Trustees Of The Leland Stanford Junior University Fabrication of group III-nitride photocathode having Cs activation layer
US7776636B2 (en) * 2005-04-25 2010-08-17 Cao Group, Inc. Method for significant reduction of dislocations for a very high A1 composition A1GaN layer
TWI293805B (en) * 2006-01-24 2008-02-21 Ind Tech Res Inst Ultraviolet detector
TW200729467A (en) * 2006-01-26 2007-08-01 Ind Tech Res Inst Photo detector component and its manufacturing method
US7656532B2 (en) * 2006-04-18 2010-02-02 Honeywell International Inc. Cavity ring-down spectrometer having mirror isolation
US7498645B2 (en) * 2006-10-04 2009-03-03 Iii-N Technology, Inc. Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors
US7649189B2 (en) * 2006-12-04 2010-01-19 Honeywell International Inc. CRDS mirror for normal incidence fiber optic coupling
US7663756B2 (en) * 2008-07-21 2010-02-16 Honeywell International Inc Cavity enhanced photo acoustic gas sensor
US7864326B2 (en) 2008-10-30 2011-01-04 Honeywell International Inc. Compact gas sensor using high reflectance terahertz mirror and related system and method
US8198590B2 (en) * 2008-10-30 2012-06-12 Honeywell International Inc. High reflectance terahertz mirror and related method
CA2653581A1 (en) 2009-02-11 2010-08-11 Kenneth Scott Alexander Butcher Migration and plasma enhanced chemical vapour deposition
US8269972B2 (en) 2010-06-29 2012-09-18 Honeywell International Inc. Beam intensity detection in a cavity ring down sensor
US8437000B2 (en) 2010-06-29 2013-05-07 Honeywell International Inc. Multiple wavelength cavity ring down gas sensor
US8322191B2 (en) 2010-06-30 2012-12-04 Honeywell International Inc. Enhanced cavity for a photoacoustic gas sensor
US8143147B1 (en) 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
DE102014225632B3 (de) * 2014-12-11 2016-03-31 Forschungsverbund Berlin E.V. Photodetektor und Vorrichtung zur Desinfektion von Wasser diesen umfassend
US11021789B2 (en) 2015-06-22 2021-06-01 University Of South Carolina MOCVD system injector for fast growth of AlInGaBN material
CN112968073B (zh) * 2021-02-01 2023-06-13 郑州大学 超灵敏柔性氧化镓光电探测器及阵列、制备方法和应用

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US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4095331A (en) * 1976-11-04 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force Fabrication of an epitaxial layer diode in aluminum nitride on sapphire
US4287527A (en) * 1978-08-30 1981-09-01 Bell Telephone Laboratories, Incorporated Opto-electronic devices based on bulk crystals of complex semiconductors
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements

Also Published As

Publication number Publication date
JPS6191977A (ja) 1986-05-10
EP0177918A3 (en) 1987-09-16
EP0177918B1 (de) 1991-03-06
EP0177918A2 (de) 1986-04-16
US4614961A (en) 1986-09-30
JPH0614561B2 (ja) 1994-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee