DE3502218A1 - Solar cell which can be used for photovoltaic solar generators - Google Patents

Solar cell which can be used for photovoltaic solar generators

Info

Publication number
DE3502218A1
DE3502218A1 DE19853502218 DE3502218A DE3502218A1 DE 3502218 A1 DE3502218 A1 DE 3502218A1 DE 19853502218 DE19853502218 DE 19853502218 DE 3502218 A DE3502218 A DE 3502218A DE 3502218 A1 DE3502218 A1 DE 3502218A1
Authority
DE
Germany
Prior art keywords
solar cell
carrier substrate
solar
semiconductor body
generator according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19853502218
Other languages
German (de)
Inventor
Helmut Dipl.-Phys. 2000 Hamburg Bebermeier
Jürgen Dipl.-Phys. 2081 Holm Koch
Joachim Dipl.-Phys. 2082 Tornesch Rath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DE19853502218 priority Critical patent/DE3502218A1/en
Priority to NL8600001A priority patent/NL8600001A/en
Priority to FR868600436A priority patent/FR2576453B1/en
Publication of DE3502218A1 publication Critical patent/DE3502218A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Solar cell which can be used for photovoltaic solar generators made of a wafer-shaped semiconductor body which is disposed on a carrier substrate and designed for bilateral irradiation, on each of whose opposite surfaces, which form the underside and top side of the solar cell, respectively, a patterned conductor system is arranged which leaves significant surface regions uncovered. Optical and thermal optimisation of the system solar cell/carrier substrate, and thus an improvement of the electric operating efficiency of the solar cell, is achieved by disposing, between the top side of the carrier substrate and the underside of the semiconductor body, a reflective medium which reflects the IR radiation which enters at the top side of the solar cell and passes through the semiconductor body. The use of a foil as a reflective medium may be provided. …<IMAGE>…

Description

Licentia Patent-Verwaltungs-GmbH PTL-HH/Sl/blLicentia Patent-Verwaltungs-GmbH PTL-HH / Sl / bl

Theodor-Stern-Kai 1 HH 84/35Theodor-Stern-Kai 1 HH 84/35

D-6000 Frankfurt 70D-6000 Frankfurt 70

"Für photovoltaische Solargeneratoren verwendbare Solarzelle""Solar cell that can be used for photovoltaic solar generators"

Die Erfindung betrifft eine Solarzelle gemäß dem Oberbegriff von Anspruch 1.The invention relates to a solar cell according to the preamble of claim 1.

Es ist eine Solarzelle aus einem scheibenförmigen, für die beiderseitige Bestrahlung vorgesehenen Halbleiterkörper bekannt, der einen pn-Ubergang enthält (DE-OS 33 08 269). Der Halbleitergrundkörper vom ersten Leitungstyp weist eine gleichmäßige Dotierung auf. An einer Oberflächenseite des Halbleiterkörpers ist eine dünne, gegenüber dem Grundkörper höher dotierte Zone vom zweiten Leitungstyp vorgesehen. Beide Zonen der Solarzelle sind auf gegenüberliegenden Oberflächenseiten des Halbleiterkörpers mit einem strukturierten, wesentliche Bereiche der Halbleiteroberfläche unbedeckt lassenden Leitbahnsystem kontaktiert. Vorzugsweise ist die Oberflächenseite des Halbleiterkörpers, in die die Zone vom zweiten Leitungstyp eingelassen ist, für die Lichteinstrahlung aus der Haupteinfallsrichtung mit der höheren Intensität vorgesehen, während die unempfindlichere, gegenüberliegende Rückseite des Halbleiterkörpers für den Eintritt des Lichtes aus der Einfallsrichtung mit geringerer Intensität vorgesehen ist.It is a solar cell made up of a disc-shaped, for both sides Irradiation provided semiconductor body known which has a pn junction contains (DE-OS 33 08 269). The semiconductor base body of the first conductivity type has a uniform doping. On one surface side of the Semiconductor body, a thin zone of the second conductivity type which is more highly doped than the base body is provided. Both zones of the solar cell are uncovered on opposite surface sides of the semiconductor body with a structured, essential area of the semiconductor surface contacting the channel system. The surface side of the semiconductor body into which the zone of the second conductivity type is embedded is preferably is intended for the light irradiation from the main direction of incidence with the higher intensity, while the less sensitive, opposite one Rear side of the semiconductor body is provided for the entry of light from the direction of incidence with a lower intensity.

- 2 BAD 0FUGINA5- 2 BATH 0FUGINA5

HH 84/35HH 84/35

Beim Aufbringen einer derartigen Solarzelle auf ein nicht-transparentes Trägersubstrat wird nachteiligerweise die von der Solarzelle nicht aufgefangene IR-Strahlung durch das Substrat absorbiert. Die Solarzelle ist Temperaturerhöhungen und damit Wirkungsgradverlusten ausgesetzt.When applying such a solar cell to a non-transparent one The disadvantage of the carrier substrate is that the IR radiation not captured by the solar cell is absorbed by the substrate. The solar cell is Exposed to temperature increases and thus loss of efficiency.

Der Erfindung liegt daher die Aufgabe zugrunde, eine Solarzelle der eingangs genannten Art zu schaffen, bei der eine optische und thermische Optimierung des Systems Solarzelle/Trägersubstrat und damit eine Verbesserung des elektrischen Betriebswirkungsgrades der Solarzelle erzielt wird.The invention is therefore based on the object of providing a solar cell of the type mentioned at the beginning to create the type mentioned, in which an optical and thermal optimization of the solar cell / carrier substrate system and thus an improvement the electrical efficiency of the solar cell achieved will.

Die Aufgabe wird erfindungsgemäß durch die kennzeichnenden Merkmale von Anspruch 1 gelöst.According to the invention, the object is achieved by the characterizing features of Claim 1 solved.

Ausgestaltungen der Erfindung sind in den Unteransprüchen 2 bis 7 beschrieben. Refinements of the invention are described in subclaims 2 to 7.

Ein Vorteil der Erfindung ist darin zu sehen, daß eine maximale IP-Reflektion realisierbar ist, wodurch eine minimale Betriebstemperatur der für beidseitige Bestrahlung vorgesehenen Solarzelle erreicht wird. Von Vorteil ist auch der mögliche Einsatz der Solarzelle auf allen transparenten oder nichttransparenten Trägersubstraten.An advantage of the invention can be seen in the fact that a maximum IP reflection can be realized, whereby a minimum operating temperature of the solar cell provided for double-sided irradiation is achieved. Advantageous is also the possible use of the solar cell on all transparent or non-transparent carrier substrates.

In der Zeichnung ist ein Ausführungsbeispiel nach der Erfindung dargestellt, und zwar zeigt die einzige Figur eine schematische,nicht maßstabsgerechte Seitenansicht einer auf einem Trägersubstrat 1 angeordneten Solarzelle 2. Diese Solarzelle besteht aus einem für die beiderseitige Bestrahlung vorgesehenen Halbleiterkörper 3, auf dessen gegenüberliegenden, die Unter- bzw. Oberseite der Solarzelle 2 bildenden Oberflächenseiten jeweils ein strukturiertes, wesentliche Oberflächenbereiche unbedeckt lassendes Leitbahnsystem angeordnet ist. Die Leitbahnsysteme sind mit 4 bzw. 5 bezeichnet, wobei mit dem oberen Leitbahnsystem 4 ein Verbinder 6 elektrisch leitend verbunden ist. Den oberen Abschluß der Solarzelle 2 bildet ein vorzugsweise mit einem transparenten Kleber aufgeklebtesIn the drawing, an embodiment according to the invention is shown, namely, the single figure shows a schematic, not to scale Side view of a solar cell 2 arranged on a carrier substrate 1. This solar cell consists of a solar cell for two-sided irradiation provided semiconductor body 3, on its opposite, the lower or upper side of the solar cell 2 forming surface sides in each case a structured, essential surface areas leaving uncovered interconnect system is arranged. The channel systems are with 4 or 5, with a connector 6 being connected to the upper interconnect system 4 in an electrically conductive manner. The top of the solar cell 2 forms one that is preferably glued on with a transparent adhesive

BAD ORJGINALBAD ORJGINAL

HH 84/35HH 84/35

Deckglas 7. Die zugehörende Kleberschicht ist mit 8 bezeichnet.Cover glass 7. The associated adhesive layer is labeled 8.

Zwischen dem Trägersubstrat 1, bei dem es sich um eine nichttransparente, sogenannte Rigidstruktur handeln kann, und dem Halbleiterkörper 3 ist ein reflektierendes Medium 9 angeordnet. Die optischen Eigenschaften dieses Mediums 9, beispielsweise einer Folie aus beliebigem reflektierendem Werkstoff oder aus Aluminium,sind an die Systemeigenschaften angepaßt. Die mechanische Verbindung zwischen dem Halbleiterkörper 2 und dem reflektierenden Medium 9 erfolgt durch einen transparenten Kleber, dessen Klebeschicht 10 aus der Zeichnung ersichtlich ist. Das Medium 9 kann entweder auf dem Trägersubstrat 1 aufgeklebt sein oder es kann integraler Bestandteil dieses Trägersubstrates sein.Between the carrier substrate 1, which is a non-transparent, so-called rigid structure can act, and the semiconductor body 3 is a reflective medium 9 is arranged. The optical properties of this medium 9, for example a film made of any reflective Material or aluminum, are adapted to the system properties. the mechanical connection between the semiconductor body 2 and the reflective medium 9 is made by a transparent adhesive, its adhesive layer 10 can be seen from the drawing. The medium 9 can either be glued to the carrier substrate 1 or it can be an integral part of this carrier substrate.

Durch das reflektierende Medium 9 wird die an der Oberseite der Solarzelle 2 eintretende, den Halbleiterkörper 3 durchsetzende IR-Strahlung reflektiert. Die reflektierte IR-Strahlung tritt somit von der Unter- / Seite der Solarzelle 1 wieder in den Halbleiterkörper 3 ein. Dies hat , The IR radiation entering the top of the solar cell 2 and penetrating the semiconductor body 3 is reflected by the reflecting medium 9. The reflected IR radiation thus re-enters the semiconductor body 3 from the underside / side of the solar cell 1. This has,

zur Folge, daß kein Anteil der IR-Strahlung durch das Trägersubstrat 1 absorbiert werden kann. Die Solarzelle 1 unterliegt keiner Temperaturerhöhung. Es wird daher eine optische und thermische Optimierung und damit eine wesentliche Verbesserung des elektrischen Wirkungsgrades in der Größenordnung von etwa 7 % erreicht.As a result, no portion of the IR radiation can be absorbed by the carrier substrate 1. The solar cell 1 is not subject to any increase in temperature. Optical and thermal optimization and thus a significant improvement in electrical efficiency in the order of about 7 % are therefore achieved.

- Leerseite - Blank page

Claims (7)

Licentia Patent-Verwaltungs-GmbH PTL-HH/Sl/blLicentia Patent-Verwaltungs-GmbH PTL-HH / Sl / bl Theodor-Stern-Kai 1 . HH 84/35Theodor-Stern-Kai 1. HH 84/35 D-6000 Frankfurt 70D-6000 Frankfurt 70 PatentansprücheClaims Für photovoltaische Solargeneratoren verwendbare Solarzelle aus einem scheibenförmigen, auf einem Trägersubstrat angeordneten, für die beiderseitige Bestrahlung vorgesehenen Halbleiterkörper, auf dessen gegenüberliegenden, die Unter- bzw. Oberseite der Solarzelle bildenden Oberflachenseiten jeweils ein strukturiertes, wesentliche Oberflächenbereiche unbedeckt lassendes Leitbahnsystem angeordnet ist, dadurch gekennzeichnet,
daß sich zwischen der Oberseite des Trägersubstrates (1) und der Unterseite des Halbleiterkörpers (3) ein reflektierendes Medium (9) befindet, das die an der Oberseite der Solarzelle (2) eintretende, den Halbleiterkörper (3) durchsetzende IR-Strahlung reflektiert.Solar cell which can be used for photovoltaic solar generators and consists of a disk-shaped semiconductor body arranged on a carrier substrate and intended for mutual irradiation, on the opposite surface sides of which a structured, essential surface areas are arranged, respectively, leaving essential surface areas uncovered,
that between the top of the carrier substrate (1) and the bottom of the semiconductor body (3) there is a reflective medium (9) which reflects the IR radiation penetrating the semiconductor body (3) and entering the top of the solar cell (2). 2. Solargenerator nach Anspruch 1, dadurch gekennzeichnet, daß die optischen Eigenschaften des Mediums (9) an die Systemeigenschaften angepaßt sind.2. Solar generator according to claim 1, characterized in that the optical properties of the medium (9) are adapted to the system properties. 3. Solargenerator nach Anspruch 1 oder 2, gekennzeichnet durch die Verwendung einer Folie als reflektierendes Medium (9).3. Solar generator according to claim 1 or 2, characterized by the use of a film as the reflective medium (9). - 2 - HH 84/35- 2 - HH 84/35 4. Solargenerator nach Anspruch 3, gekennzeichnet durch eine Folie aus Aluminium.4. Solar generator according to claim 3, characterized by a foil made of aluminum. 5. Solargenerator nach Anspruch 1, 2, 3 oder 4, dadurch gekennzeichnet, daß die mechanische Verbindung zwischen der Unterseite der Solarzelle (2) und dem reflektierenden Medium (9) durch einen transparenten Kleber (10) erfolgt. 5. Solar generator according to claim 1, 2, 3 or 4, characterized in that the mechanical connection between the underside of the solar cell (2) and the reflective medium (9) is made by a transparent adhesive (10). 6. Solargenerator nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß das reflektierende Medium (9) auf dem Trägersubstrat (1) aufgeklebt ist.6. Solar generator according to one of claims 1 to 5, characterized in that the reflective medium (9) is glued to the carrier substrate (1). 7. Solargenerator nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß das reflektierende Medium (9) integraler Bestandteil des Trägersubstrats (1) ist.7. Solar generator according to one of claims 1 to 5, characterized in that the reflective medium (9) is an integral part of the carrier substrate (1).
DE19853502218 1985-01-24 1985-01-24 Solar cell which can be used for photovoltaic solar generators Withdrawn DE3502218A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19853502218 DE3502218A1 (en) 1985-01-24 1985-01-24 Solar cell which can be used for photovoltaic solar generators
NL8600001A NL8600001A (en) 1985-01-24 1986-01-02 SOLAR CELL TO BE USED FOR PHOTOVOLTAIC SOLAR GENERATORS.
FR868600436A FR2576453B1 (en) 1985-01-24 1986-01-14 SOLAR CELL FOR PHOTOVOLTAIC SOLAR GENERATORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853502218 DE3502218A1 (en) 1985-01-24 1985-01-24 Solar cell which can be used for photovoltaic solar generators

Publications (1)

Publication Number Publication Date
DE3502218A1 true DE3502218A1 (en) 1986-07-24

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ID=6260582

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853502218 Withdrawn DE3502218A1 (en) 1985-01-24 1985-01-24 Solar cell which can be used for photovoltaic solar generators

Country Status (3)

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DE (1) DE3502218A1 (en)
FR (1) FR2576453B1 (en)
NL (1) NL8600001A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3815512A1 (en) * 1988-05-06 1989-11-16 Telefunken Electronic Gmbh Solar cell with reduced effective recombination rate of the charge carriers
DE3943516A1 (en) * 1989-02-07 1990-11-29 Kunert Heinz Window, wall, roof or sill element
DE19730975A1 (en) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Porous material especially single crystal silicon layer production
US6645833B2 (en) 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3308598A1 (en) * 1982-03-18 1983-09-22 Energy Conversion Devices, Inc., 48084 Troy, Mich. REAR REFLECTOR SYSTEM FOR BARRIER PHOTO ELEMENTS
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355196A (en) * 1981-03-11 1982-10-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell having improved back surface reflector
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3308598A1 (en) * 1982-03-18 1983-09-22 Energy Conversion Devices, Inc., 48084 Troy, Mich. REAR REFLECTOR SYSTEM FOR BARRIER PHOTO ELEMENTS
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3815512A1 (en) * 1988-05-06 1989-11-16 Telefunken Electronic Gmbh Solar cell with reduced effective recombination rate of the charge carriers
DE3943516A1 (en) * 1989-02-07 1990-11-29 Kunert Heinz Window, wall, roof or sill element
DE19730975A1 (en) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Porous material especially single crystal silicon layer production
US6645833B2 (en) 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method

Also Published As

Publication number Publication date
NL8600001A (en) 1986-08-18
FR2576453B1 (en) 1989-05-26
FR2576453A1 (en) 1986-07-25

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