DE3485699D1 - Verfahren zur herstellung von filmen eines polymerisierten und amorphen halogensilans und nach diesem verfahren hergestellte produkte. - Google Patents

Verfahren zur herstellung von filmen eines polymerisierten und amorphen halogensilans und nach diesem verfahren hergestellte produkte.

Info

Publication number
DE3485699D1
DE3485699D1 DE8484307210T DE3485699T DE3485699D1 DE 3485699 D1 DE3485699 D1 DE 3485699D1 DE 8484307210 T DE8484307210 T DE 8484307210T DE 3485699 T DE3485699 T DE 3485699T DE 3485699 D1 DE3485699 D1 DE 3485699D1
Authority
DE
Germany
Prior art keywords
halogensilane
polymerized
amorphous
products produced
producing films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484307210T
Other languages
English (en)
Inventor
Kenneth George Sharp
Leslie Diane Stark
Hsien-Kun Chu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE3485699D1 publication Critical patent/DE3485699D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Fire-Extinguishing Compositions (AREA)
  • Silicon Polymers (AREA)
DE8484307210T 1983-10-31 1984-10-19 Verfahren zur herstellung von filmen eines polymerisierten und amorphen halogensilans und nach diesem verfahren hergestellte produkte. Expired - Fee Related DE3485699D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54715683A 1983-10-31 1983-10-31

Publications (1)

Publication Number Publication Date
DE3485699D1 true DE3485699D1 (de) 1992-06-11

Family

ID=24183553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484307210T Expired - Fee Related DE3485699D1 (de) 1983-10-31 1984-10-19 Verfahren zur herstellung von filmen eines polymerisierten und amorphen halogensilans und nach diesem verfahren hergestellte produkte.

Country Status (6)

Country Link
EP (1) EP0140660B1 (de)
JP (1) JPS60116779A (de)
KR (1) KR930008342B1 (de)
AU (1) AU569336B2 (de)
CA (1) CA1245109A (de)
DE (1) DE3485699D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1280055C (en) * 1985-10-24 1991-02-12 Ronald Edward Enstrom Vapor deposition apparatus
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
EP0264722A3 (de) * 1986-10-09 1989-07-12 Mitsubishi Materials Corporation Verfahren zur Herstellung von amorphem Silizium
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
DE102009056436B4 (de) * 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Chloridhaltiges Silicium
JP2012169553A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 基板処理装置
SG10201506694QA (en) * 2014-09-03 2016-04-28 Silcotek Corp Chemical vapor deposition process and coated article
JP2018502817A (ja) * 2014-12-15 2018-02-01 ナガルジュナ ファーティライザーズ アンド ケミカルズ リミテッド 塩素化オリゴシランの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1573154A (en) * 1977-03-01 1980-08-13 Pilkington Brothers Ltd Coating glass
JPS5768018A (en) * 1980-10-15 1982-04-26 Semiconductor Energy Lab Co Ltd Manufacture of semiamorphous semiconductor
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
DE3208494C2 (de) * 1981-03-09 1993-09-30 Canon Kk Verfahren zur Herstellung eines fotoleitfähigen Elements
JPS58500360A (ja) * 1981-03-11 1983-03-10 クロ−ナ−・コ−ポレイション 非晶質半導体の方法及び装置
AU8339082A (en) * 1981-03-11 1982-09-28 Chronar Corp. Amorphous semiconductor method and devices
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
IT1176080B (it) * 1984-04-18 1987-08-12 Enichimica Secondaria Procedimento per la rigenerazione di catalizzatori di ammonoossidazione

Also Published As

Publication number Publication date
EP0140660A2 (de) 1985-05-08
KR850003063A (ko) 1985-05-28
CA1245109A (en) 1988-11-22
EP0140660B1 (de) 1992-05-06
EP0140660A3 (en) 1988-03-09
KR930008342B1 (ko) 1993-08-30
AU3484484A (en) 1985-05-09
JPS60116779A (ja) 1985-06-24
AU569336B2 (en) 1988-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee