DE3483847D1 - Trockenaetzen von schichten aus aluminium oder aus einer aluminiumlegierung. - Google Patents
Trockenaetzen von schichten aus aluminium oder aus einer aluminiumlegierung.Info
- Publication number
- DE3483847D1 DE3483847D1 DE8484302493T DE3483847T DE3483847D1 DE 3483847 D1 DE3483847 D1 DE 3483847D1 DE 8484302493 T DE8484302493 T DE 8484302493T DE 3483847 T DE3483847 T DE 3483847T DE 3483847 D1 DE3483847 D1 DE 3483847D1
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- drying layers
- aluminum alloy
- alloy
- drying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910000838 Al alloy Inorganic materials 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 238000001035 drying Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58064719A JPS59189633A (ja) | 1983-04-13 | 1983-04-13 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3483847D1 true DE3483847D1 (de) | 1991-02-07 |
Family
ID=13266234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484302493T Expired - Fee Related DE3483847D1 (de) | 1983-04-13 | 1984-04-12 | Trockenaetzen von schichten aus aluminium oder aus einer aluminiumlegierung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4547260A (de) |
EP (1) | EP0122776B1 (de) |
JP (1) | JPS59189633A (de) |
DE (1) | DE3483847D1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4592800A (en) * | 1984-11-02 | 1986-06-03 | Oerlikon-Buhrle U.S.A. Inc. | Method of inhibiting corrosion after aluminum etching |
US4668335A (en) * | 1985-08-30 | 1987-05-26 | Advanced Micro Devices, Inc. | Anti-corrosion treatment for patterning of metallic layers |
JPH0691049B2 (ja) * | 1986-02-28 | 1994-11-14 | 東京応化工業株式会社 | 有機膜の除去方法及び装置 |
JPS63268258A (ja) * | 1987-04-24 | 1988-11-04 | Nec Corp | 半導体装置 |
US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
JPH01215986A (ja) * | 1988-02-24 | 1989-08-29 | Hitachi Ltd | ドライエッチング方法 |
US5290733A (en) * | 1988-06-23 | 1994-03-01 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices including depositing aluminum on aluminum leads |
US4985113A (en) * | 1989-03-10 | 1991-01-15 | Hitachi, Ltd. | Sample treating method and apparatus |
JP2722768B2 (ja) * | 1990-04-26 | 1998-03-09 | ソニー株式会社 | 多層レジスト層のエッチング方法 |
JP3092185B2 (ja) * | 1990-07-30 | 2000-09-25 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JPH04221825A (ja) * | 1990-12-24 | 1992-08-12 | Nec Corp | 選択ドライエッチング方法 |
US5217570A (en) * | 1991-01-31 | 1993-06-08 | Sony Corporation | Dry etching method |
DE4107006A1 (de) * | 1991-03-05 | 1992-09-10 | Siemens Ag | Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen |
JP3185150B2 (ja) * | 1991-03-15 | 2001-07-09 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
US5221424A (en) * | 1991-11-21 | 1993-06-22 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch |
US5533635A (en) * | 1994-10-11 | 1996-07-09 | Chartered Semiconductor Manufacturing Pte. Ltd. | Method of wafer cleaning after metal etch |
JP2953974B2 (ja) * | 1995-02-03 | 1999-09-27 | 松下電子工業株式会社 | 半導体装置の製造方法 |
US5627193A (en) * | 1995-02-09 | 1997-05-06 | Mitsui Toatsu Chemicals, Inc. | Quinoline-4-carbonylguanidine derivatives, process for producing the same and pharmaceutical preparations containing the compounds |
JP2996159B2 (ja) * | 1995-10-26 | 1999-12-27 | ヤマハ株式会社 | ドライエッチング方法 |
US6033582A (en) | 1996-01-22 | 2000-03-07 | Etex Corporation | Surface modification of medical implants |
US5843289A (en) * | 1996-01-22 | 1998-12-01 | Etex Corporation | Surface modification of medical implants |
US5780363A (en) * | 1997-04-04 | 1998-07-14 | International Business Machines Coporation | Etching composition and use thereof |
NL1005963C2 (nl) * | 1997-05-02 | 1998-11-09 | Asm Int | Verticale oven voor het behandelen van halfgeleidersubstraten. |
US5965465A (en) * | 1997-09-18 | 1999-10-12 | International Business Machines Corporation | Etching of silicon nitride |
US6033996A (en) * | 1997-11-13 | 2000-03-07 | International Business Machines Corporation | Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide |
US6150282A (en) * | 1997-11-13 | 2000-11-21 | International Business Machines Corporation | Selective removal of etching residues |
US6200891B1 (en) | 1998-08-13 | 2001-03-13 | International Business Machines Corporation | Removal of dielectric oxides |
US6117796A (en) * | 1998-08-13 | 2000-09-12 | International Business Machines Corporation | Removal of silicon oxide |
CN104810279B (zh) * | 2014-01-23 | 2018-07-10 | 北大方正集团有限公司 | 一种铝刻蚀方法及装置 |
EP3647457B1 (de) * | 2017-06-30 | 2023-06-21 | Toppan Printing Co., Ltd. | Filmbehandlungsverfahren und filmherstellungsverfahren |
US11062921B1 (en) * | 2020-09-11 | 2021-07-13 | Applied Materials, Inc. | Systems and methods for aluminum-containing film removal |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
JPS55158275A (en) * | 1979-05-28 | 1980-12-09 | Hitachi Ltd | Corrosion preventing method for al and al alloy |
EP0023429B1 (de) * | 1979-07-31 | 1985-12-18 | Fujitsu Limited | Trockene Ätzung eines metallischen Films |
US4325984B2 (en) * | 1980-07-28 | 1998-03-03 | Fairchild Camera & Inst | Plasma passivation technique for the prevention of post-etch corrosion of plasma-etched aluminum films |
US4380488A (en) * | 1980-10-14 | 1983-04-19 | Branson International Plasma Corporation | Process and gas mixture for etching aluminum |
US4412885A (en) * | 1982-11-03 | 1983-11-01 | Applied Materials, Inc. | Materials and methods for plasma etching of aluminum and aluminum alloys |
-
1983
- 1983-04-13 JP JP58064719A patent/JPS59189633A/ja active Pending
-
1984
- 1984-04-10 US US06/598,741 patent/US4547260A/en not_active Expired - Fee Related
- 1984-04-12 EP EP84302493A patent/EP0122776B1/de not_active Expired - Lifetime
- 1984-04-12 DE DE8484302493T patent/DE3483847D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0122776A2 (de) | 1984-10-24 |
EP0122776A3 (en) | 1987-09-23 |
US4547260A (en) | 1985-10-15 |
JPS59189633A (ja) | 1984-10-27 |
EP0122776B1 (de) | 1990-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |