DE3381834D1 - COMPOSITION OF PHOTO-SENSITIVE RESIN OF THE POSITIVE TYPE. - Google Patents

COMPOSITION OF PHOTO-SENSITIVE RESIN OF THE POSITIVE TYPE.

Info

Publication number
DE3381834D1
DE3381834D1 DE8383302258T DE3381834T DE3381834D1 DE 3381834 D1 DE3381834 D1 DE 3381834D1 DE 8383302258 T DE8383302258 T DE 8383302258T DE 3381834 T DE3381834 T DE 3381834T DE 3381834 D1 DE3381834 D1 DE 3381834D1
Authority
DE
Germany
Prior art keywords
photo
composition
sensitive resin
positive type
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383302258T
Other languages
German (de)
Inventor
Yoshihiro Hosaka
Yoichi Kamoshida
Yoshiyuki Harita
Kunihiro Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6575982A external-priority patent/JPS58182632A/en
Priority claimed from JP4047883A external-priority patent/JPS59165053A/en
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Application granted granted Critical
Publication of DE3381834D1 publication Critical patent/DE3381834D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE8383302258T 1982-04-20 1983-04-20 COMPOSITION OF PHOTO-SENSITIVE RESIN OF THE POSITIVE TYPE. Expired - Lifetime DE3381834D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6575982A JPS58182632A (en) 1982-04-20 1982-04-20 Positive type photosensitive resin composition
JP4047883A JPS59165053A (en) 1983-03-11 1983-03-11 Positive type photosensitive resin composition

Publications (1)

Publication Number Publication Date
DE3381834D1 true DE3381834D1 (en) 1990-10-04

Family

ID=26379934

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383302258T Expired - Lifetime DE3381834D1 (en) 1982-04-20 1983-04-20 COMPOSITION OF PHOTO-SENSITIVE RESIN OF THE POSITIVE TYPE.

Country Status (3)

Country Link
US (1) US4499171A (en)
EP (1) EP0092444B1 (en)
DE (1) DE3381834D1 (en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3220816A1 (en) * 1982-06-03 1983-12-08 Merck Patent Gmbh, 6100 Darmstadt LIGHT SENSITIVE COMPONENTS FOR POSITIVELY WORKING PHOTORESIST MATERIALS
EP0136110A3 (en) * 1983-08-30 1986-05-28 Mitsubishi Kasei Corporation Positive photosensitive compositions useful as photoresists
US4596763A (en) * 1984-10-01 1986-06-24 American Hoechst Corporation Positive photoresist processing with mid U-V range exposure
JPS61141441A (en) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition
JPS61185741A (en) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd Positive type photoresist composition
US4588670A (en) * 1985-02-28 1986-05-13 American Hoechst Corporation Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
JPS62123444A (en) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd Radiation sensitive resinous composition
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4684597A (en) * 1985-10-25 1987-08-04 Eastman Kodak Company Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor
EP0227487B1 (en) * 1985-12-27 1992-07-15 Japan Synthetic Rubber Co., Ltd. Positive type radiation-sensitive resin composition
JPH0654388B2 (en) * 1986-05-02 1994-07-20 東京応化工業株式会社 Positive photoresist composition
US4732836A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4902785A (en) * 1986-05-02 1990-02-20 Hoechst Celanese Corporation Phenolic photosensitizers containing quinone diazide and acidic halide substituents
US5035976A (en) * 1986-05-02 1991-07-30 Hoechst Celanese Corporation Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
US5162510A (en) * 1986-05-02 1992-11-10 Hoechst Celanese Corporation Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
JP2568827B2 (en) * 1986-10-29 1997-01-08 富士写真フイルム株式会社 Positive photoresist composition
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
JPS63178228A (en) * 1987-01-20 1988-07-22 Fuji Photo Film Co Ltd Positive type photoresist composition
US4996122A (en) * 1988-03-31 1991-02-26 Morton International, Inc. Method of forming resist pattern and thermally stable and highly resolved resist pattern
DE3842896C2 (en) * 1988-04-22 1998-07-02 Tokyo Ohka Kogyo Co Ltd Positive working photosensitive composition
US4943511A (en) * 1988-08-05 1990-07-24 Morton Thiokol, Inc. High sensitivity mid and deep UV resist
US5169741A (en) * 1988-10-11 1992-12-08 Matsushita Electric Industrial Co., Ltd. Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent
JP2715480B2 (en) * 1988-10-13 1998-02-18 住友化学工業株式会社 Composition for positive resist
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
DE3837500A1 (en) * 1988-11-04 1990-05-23 Hoechst Ag NEW RADIATION-SENSITIVE COMPOUNDS, MADE BY THIS RADIATION-SENSITIVE MIXTURE AND RECORDING MATERIAL
EP0490966B1 (en) * 1989-09-08 1998-11-04 Olin Microelectronic Chemicals, Inc. Radiation-sensitive compositions containing fully substituted novolak polymers
US5075194A (en) * 1990-01-09 1991-12-24 Industrial Technology Research Institute Positive photoresist composition containing 4,4-diester, 4,5-diester, or 5,5-diester of spiroglycol and 1-oxo-2-diazonaphthalene-5-sulfonic acid chloride
JP2761786B2 (en) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 Positive photoresist composition
TW202504B (en) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
JPH03294861A (en) * 1990-04-13 1991-12-26 Mitsubishi Petrochem Co Ltd Positive type photoresist composition
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
JPH0915853A (en) * 1995-04-27 1997-01-17 Fuji Photo Film Co Ltd Positive type photoresist composite
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP4426526B2 (en) * 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド State-of-the-art planarization films for microelectronics applications and devices and methods for their manufacture
KR101430962B1 (en) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 Photoresist composition and method of manufacturing array substrate using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510563A (en) * 1949-07-23
DE938233C (en) * 1953-03-11 1956-01-26 Kalle & Co Ag Photosensitive material for the photomechanical production of printing forms
NL255348A (en) * 1959-08-29
NL130926C (en) * 1959-09-04
CA774047A (en) * 1963-12-09 1967-12-19 Shipley Company Light-sensitive material and process for the development thereof
US3802885A (en) * 1967-08-15 1974-04-09 Algraphy Ltd Photosensitive lithographic naphthoquinone diazide printing plate with aluminum base
US4005437A (en) * 1975-04-18 1977-01-25 Rca Corporation Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil
US4189320A (en) * 1975-04-29 1980-02-19 American Hoechst Corporation Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures
US4059449A (en) * 1976-09-30 1977-11-22 Rca Corporation Photoresist containing a thiodipropionate compound
SU913320A1 (en) * 1980-01-16 1982-03-15 Nelli D Timerova Positive photoresistor

Also Published As

Publication number Publication date
US4499171A (en) 1985-02-12
EP0092444A2 (en) 1983-10-26
EP0092444B1 (en) 1990-08-29
EP0092444A3 (en) 1984-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition