DE3380011D1 - Method for the production of a semiconductor laser having several independent wavelengths - Google Patents
Method for the production of a semiconductor laser having several independent wavelengthsInfo
- Publication number
- DE3380011D1 DE3380011D1 DE8383400673T DE3380011T DE3380011D1 DE 3380011 D1 DE3380011 D1 DE 3380011D1 DE 8383400673 T DE8383400673 T DE 8383400673T DE 3380011 T DE3380011 T DE 3380011T DE 3380011 D1 DE3380011 D1 DE 3380011D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor laser
- several independent
- independent wavelengths
- wavelengths
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8206179A FR2525033B1 (fr) | 1982-04-08 | 1982-04-08 | Laser a semi-conducteur a plusieurs longueurs d'onde independantes et son procede de realisation |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3380011D1 true DE3380011D1 (en) | 1989-07-06 |
Family
ID=9272908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383400673T Expired DE3380011D1 (en) | 1982-04-08 | 1983-03-31 | Method for the production of a semiconductor laser having several independent wavelengths |
Country Status (6)
Country | Link |
---|---|
US (1) | US4547956A (de) |
EP (1) | EP0091859B1 (de) |
JP (1) | JPS58190089A (de) |
CA (1) | CA1213343A (de) |
DE (1) | DE3380011D1 (de) |
FR (1) | FR2525033B1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
FR2562328B1 (fr) * | 1984-03-30 | 1987-11-27 | Menigaux Louis | Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede |
FR2562339B1 (fr) * | 1984-04-03 | 1986-06-20 | Bouadma Noureddine | Procede de realisation d'un miroir de laser a semi-conducteur, par usinage ionique |
JPS6184827A (ja) * | 1984-10-02 | 1986-04-30 | Sharp Corp | 半導体装置の製造方法 |
US4639999A (en) * | 1984-11-02 | 1987-02-03 | Xerox Corporation | High resolution, high efficiency I.R. LED printing array fabrication method |
FR2605801B1 (fr) * | 1986-10-23 | 1989-03-03 | Menigaux Louis | Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu |
EP0288267B1 (de) * | 1987-04-21 | 1993-10-06 | Nec Corporation | Optische Halbleiteranordnung |
JPS63306689A (ja) * | 1987-05-22 | 1988-12-14 | シーメンス、アクチエンゲゼルシヤフト | 横結合レーザーダイオードアレー |
US4825081A (en) * | 1987-12-01 | 1989-04-25 | General Electric Company | Light-activated series-connected pin diode switch |
US4899204A (en) * | 1987-12-01 | 1990-02-06 | General Electric Company | High voltage switch structure with light responsive diode stack |
JP2780981B2 (ja) * | 1988-06-27 | 1998-07-30 | 三菱電機株式会社 | 多点発光型半導体レーザ及びその製造方法 |
JPH0750814B2 (ja) * | 1988-09-27 | 1995-05-31 | 三菱電機株式会社 | 多点発光型半導体レーザ装置 |
FR2642228A1 (fr) * | 1989-01-20 | 1990-07-27 | Menigaux Louis | Procede de fabrication d'un dispositif semi-conducteur quasi plat susceptible d'effet laser multi-longueurs d'onde et dispositif correspondant |
US4980314A (en) * | 1989-06-06 | 1990-12-25 | At&T Bell Laboratories | Vapor processing of a substrate |
JPH03151684A (ja) * | 1989-11-08 | 1991-06-27 | Mitsubishi Electric Corp | 多波長集積化半導体レーザの製造方法 |
KR0178492B1 (ko) * | 1995-12-21 | 1999-04-15 | 양승택 | 기울어진 공진기로 편광특성이 제어된 표면방출 레이저 다이오드 제조방법 |
JP3950604B2 (ja) * | 1999-12-28 | 2007-08-01 | 日本オプネクスト株式会社 | 半導体レーザ装置、半導体レーザアレー装置及び光伝送装置 |
US20030049893A1 (en) * | 2001-06-08 | 2003-03-13 | Matthew Currie | Method for isolating semiconductor devices |
WO2004081982A2 (en) | 2003-03-07 | 2004-09-23 | Amberwave Systems Corporation | Shallow trench isolation process |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3955082A (en) * | 1974-09-19 | 1976-05-04 | Northern Electric Company Limited | Photodiode detector with selective frequency response |
US4028146A (en) * | 1975-03-11 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | LPE Technique for fabricating tapered optical couplers |
US4136928A (en) * | 1977-05-06 | 1979-01-30 | Bell Telephone Laboratories, Incorporated | Optical integrated circuit including junction laser with oblique mirror |
JPS54107689A (en) * | 1978-02-10 | 1979-08-23 | Nec Corp | Semiconductor laser element |
JPS53149779A (en) * | 1978-04-06 | 1978-12-27 | Sharp Corp | Preventive structure from transition vibration of semiconductor laser element |
JPS55141780A (en) * | 1979-04-24 | 1980-11-05 | Nec Corp | Multiple wavelength integrated semiconductor laser array |
US4318058A (en) * | 1979-04-24 | 1982-03-02 | Nippon Electric Co., Ltd. | Semiconductor diode laser array |
US4293826A (en) * | 1979-04-30 | 1981-10-06 | Xerox Corporation | Hybrid semiconductor laser/detectors |
JPS5783082A (en) * | 1980-11-11 | 1982-05-24 | Nippon Telegr & Teleph Corp <Ntt> | Two wave length semiconductor laser device |
JPS57124489A (en) * | 1981-01-27 | 1982-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Two wavelength semiconductor light emitting element |
NL8101409A (nl) * | 1981-03-23 | 1982-10-18 | Philips Nv | Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan. |
US4445218A (en) * | 1981-09-28 | 1984-04-24 | Bell Telephone Laboratories, Incorporated | Semiconductor laser with conductive current mask |
-
1982
- 1982-04-08 FR FR8206179A patent/FR2525033B1/fr not_active Expired
-
1983
- 1983-03-28 US US06/479,579 patent/US4547956A/en not_active Expired - Fee Related
- 1983-03-31 DE DE8383400673T patent/DE3380011D1/de not_active Expired
- 1983-03-31 EP EP83400673A patent/EP0091859B1/de not_active Expired
- 1983-04-06 CA CA000425340A patent/CA1213343A/en not_active Expired
- 1983-04-07 JP JP58061517A patent/JPS58190089A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4547956A (en) | 1985-10-22 |
JPS58190089A (ja) | 1983-11-05 |
EP0091859A3 (en) | 1986-01-15 |
EP0091859A2 (de) | 1983-10-19 |
CA1213343A (en) | 1986-10-28 |
FR2525033A1 (fr) | 1983-10-14 |
EP0091859B1 (de) | 1989-05-31 |
FR2525033B1 (fr) | 1986-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |