DE3365725D1 - Control circuit for the base of a power transistor utilized in switching high voltages - Google Patents

Control circuit for the base of a power transistor utilized in switching high voltages

Info

Publication number
DE3365725D1
DE3365725D1 DE8383402351T DE3365725T DE3365725D1 DE 3365725 D1 DE3365725 D1 DE 3365725D1 DE 8383402351 T DE8383402351 T DE 8383402351T DE 3365725 T DE3365725 T DE 3365725T DE 3365725 D1 DE3365725 D1 DE 3365725D1
Authority
DE
Germany
Prior art keywords
base
control circuit
power transistor
high voltages
switching high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383402351T
Other languages
English (en)
Inventor
Maurice Gaude
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telemecanique SA
Original Assignee
La Telemecanique Electrique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by La Telemecanique Electrique SA filed Critical La Telemecanique Electrique SA
Application granted granted Critical
Publication of DE3365725D1 publication Critical patent/DE3365725D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/0422—Anti-saturation measures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
DE8383402351T 1982-12-14 1983-12-06 Control circuit for the base of a power transistor utilized in switching high voltages Expired DE3365725D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8220906A FR2537804B1 (fr) 1982-12-14 1982-12-14 Circuit de commande de la base d'un transistor de puissance utilise en commutation a haute tension

Publications (1)

Publication Number Publication Date
DE3365725D1 true DE3365725D1 (en) 1986-10-02

Family

ID=9280061

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383402351T Expired DE3365725D1 (en) 1982-12-14 1983-12-06 Control circuit for the base of a power transistor utilized in switching high voltages

Country Status (5)

Country Link
US (1) US4639616A (de)
EP (1) EP0114540B1 (de)
CA (1) CA1203844A (de)
DE (1) DE3365725D1 (de)
FR (1) FR2537804B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728817A (en) * 1987-02-09 1988-03-01 Westinghouse Electric Corp. Power transistor drive circuit
FR2645372B1 (fr) * 1989-04-04 1994-11-25 Crouzet Sa Procede de commutation d'un transistor
US5006949A (en) * 1990-04-30 1991-04-09 Teledyne Industries, Inc. Temperature compensated overload trip level solid state relay
US5173848A (en) * 1991-09-06 1992-12-22 Roof Richard W Motor controller with bi-modal turnoff circuits
DE19803270A1 (de) * 1998-01-29 1999-08-05 Thomson Brandt Gmbh Schaltung zum Ansteuern eines Schalttransistors
US6262898B1 (en) 1999-09-27 2001-07-17 Deutsche Thomson-Brandt Gmbh Circuit for driving a switching transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566158A (en) * 1968-08-07 1971-02-23 Nasa Transistor drive regulator
GB1396314A (en) * 1971-09-03 1975-06-04 British Aircraft Corp Ltd Pulse driving circuits
US4339671A (en) * 1980-03-21 1982-07-13 General Electric Company Proportional base drive circuit
DE3018501A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Schalter mit einem als source-folger betriebenen mis-pet
US4393316A (en) * 1981-03-11 1983-07-12 Reliance Electric Co. Transistor drive circuit

Also Published As

Publication number Publication date
CA1203844A (fr) 1986-04-29
US4639616A (en) 1987-01-27
FR2537804A1 (fr) 1984-06-15
EP0114540B1 (de) 1986-08-27
EP0114540A1 (de) 1984-08-01
FR2537804B1 (fr) 1986-05-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee