DE3324232A1 - Process for producing crystalline silicon bodies having a structure which increases the surface area, and use of said bodies as substrates for solar cells and catalysts - Google Patents
Process for producing crystalline silicon bodies having a structure which increases the surface area, and use of said bodies as substrates for solar cells and catalystsInfo
- Publication number
- DE3324232A1 DE3324232A1 DE19833324232 DE3324232A DE3324232A1 DE 3324232 A1 DE3324232 A1 DE 3324232A1 DE 19833324232 DE19833324232 DE 19833324232 DE 3324232 A DE3324232 A DE 3324232A DE 3324232 A1 DE3324232 A1 DE 3324232A1
- Authority
- DE
- Germany
- Prior art keywords
- honeycomb
- silicon
- bodies
- hydrofluoric acid
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 title claims abstract description 7
- 239000003054 catalyst Substances 0.000 title claims abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000003792 electrolyte Substances 0.000 claims abstract description 7
- 238000000866 electrolytic etching Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005868 electrolysis reaction Methods 0.000 claims description 6
- 239000000080 wetting agent Substances 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 claims 4
- 210000002421 cell wall Anatomy 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 241000264877 Hippospongia communis Species 0.000 description 8
- 239000010410 layer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J29/00—Catalysts comprising molecular sieves
- B01J29/03—Catalysts comprising molecular sieves not having base-exchange properties
- B01J29/035—Microporous crystalline materials not having base exchange properties, such as silica polymorphs, e.g. silicalites
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
Description
Verfahren zum Herstellen von aus kristallinem SiliziumProcess for producing from crystalline silicon
bestehenden Körpern mit einer die Oberfläche vergrößernden Struktur, sowie deren Anwendung als Substrate für Solarzellen und Katalysatoren Die vorliegende Patentanmeldung betrifft ein Verfahren zum Herstellen eines aus kristallinem Silizium bestehenden Körpers, der an mindestens einer seiner Oberflächenseiten mit einer die Oberfläche vergrößernden Struktur versehen ist, sowie seine Anwendung.existing bodies with a structure that increases the surface area, and their use as substrates for solar cells and catalysts The present Patent application relates to a method for producing one from crystalline silicon existing body, which on at least one of its surface sides with a the surface-enlarging structure is provided, as well as its application.
Siliziumkörper mit mindestens einer die Oberfläche vergrößernden Struktur werden benötigt bei der Herstellung von Solarzellen. Diese Solarzellen sollen das einfallende Licht, um einen möglichst hohen Wirkungsgrad zu erreichen, unabhängig von der Wellenlänge vollständig absorbieren, d.h., es sollte keine Reflexion auftreten.Silicon body with at least one structure that increases the surface area are required in the manufacture of solar cells. These solar cells are supposed to do that incident light, in order to achieve the highest possible efficiency, independently absorb completely of the wavelength, i.e. there should be no reflection.
Unstrukturierte Siliziumoberflächen erfüllen diese Bedingung nicht.Unstructured silicon surfaces do not meet this requirement.
Es ist bekannt, zur Unterdrückung der Reflexion auf die Frontseite der Solarzelle eine Antireflexschicht aus transparenten dielektrischen Stoffen, wie SiO2 oder Titandioxid aufzudampfen. Diese Schichten vermindern zwar die Lichtreflexion, doch gilt dies nicht für alle Wellenlängen und Einfallsrichtungen. Beim Sonnenlicht soll ein möglichst breites Spektrum zur Solarenergieerzeugung ausgenutzt werden. Das auffallende Licht soll unabhängig von der Wellenlänge durch Vielfachreflexion eingefangen werden. Ein weiterer Nachteil der lichtoptischen Antireflexionsbeläge neben der Wellenlängenabhängigkeit ist der hohe Kostenaufwand.It is known to suppress the reflection on the front the solar cell has an anti-reflective layer made of transparent dielectric materials, like SiO2 or titanium dioxide. These layers reduce the light reflection, but this does not apply to all wavelengths and directions of incidence. In the sunlight the broadest possible spectrum should be used to generate solar energy. The incident light should be independent of the wavelength due to multiple reflection be captured. Another disadvantage of the light-optical anti-reflective coverings in addition to the wavelength dependence is the high cost.
Aufgabe der Erfindunq ist es daher, ein Verfahren zur Herstellung eines Siliziumkörpers anzugeben, welches die als Frontseite für Solarzellen verwendete Oberfläche mit einer die Oberfläche vergrößernden Struktur versieht.The object of the invention is therefore to provide a method for production to specify a silicon body which was used as the front for solar cells Provides the surface with a structure that increases the surface area.
Diese Struktur soll so beschaffen sein, daß das einfallende Licht unabhängig von der Wellenlänge vollständig absorbiert wird und mit einem hohen Wirkungsgrad zur Solarenergienutzung ausgewertet werden kann.This structure should be such that the incident light is completely absorbed regardless of the wavelength and with a high degree of efficiency can be evaluated for solar energy use.
In dieser Richtung sind schon viele Versuche unternommen worden. So ist beispielsweise aus der DE-OS 30 47 383 eine Solarzelle mit erhöhtem Wirkungsgrad bekannt, deren Oberfläche eine Rippenstruktur hat und bei der die Zwischenräume zwischen jeweils benachbarten Rippen mit einem für die Solarstrahlung gut durchlässigem Material ausgefüllt sind, wobei sich in diesem Material die Strahlung stark streuende Partikel befinden.Many attempts have been made in this direction. So is for example from DE-OS 30 47 383 a solar cell with increased efficiency known whose surface has a rib structure and in which the spaces between adjacent ribs with one that is well permeable to solar radiation Material are filled, the radiation being strongly scattered in this material Particles are located.
Des weiteren ist aus der DE-OS 28 28 744 eine Anordnung zum Absorbieren von Sonnenenergie bekannt, die aus einem amorphen Halbleiterkörper mit einer geätzten Fläche besteht, die eine Reihe von nadelförmigen Gebilden aufweist, deren Achsen in Richtung des Energieeinfalls ausgerichtet sind. Die nadelförmige Oberfläche wird im Falle von Silizium als Halbleitermaterial durch Ätzen in einer Mischung aus Flußsäure, Salpetersäure und Wasser (10 : 1 : 1) erhalten.Furthermore, from DE-OS 28 28 744 an arrangement for absorbing known from solar energy, which consists of an amorphous semiconductor body with an etched There is a surface that has a series of needle-shaped structures, the axes of which are aligned in the direction of the incident energy. The needle-shaped surface will in the case of silicon as semiconductor material by etching in a mixture of hydrofluoric acid, Obtain nitric acid and water (10: 1: 1).
Die Erfindung beschreitet einen anderen Weg zur Lösung der Aufgabe der Herstellung einer strukturierten Oberfläche eines Siliziumkörpers mit maximaler Lichtabsorption und ist durch ein Verfahren der eingangs genannten Art dadurch gekennzeichnet, daß die Struktur in Form von in die Oberfläche eingeätzten Waben erzeugt wird. Dabei liegt es im Rahmen der Erfindung, daß die wabenzellenförmige Struktur durch elektrolytische Ätzung in einem Flußsäureelektrolyten erzeugt wird, wobei der aus Silizium bestehende Körper als positiv gepolte Elektrode einer Elektrolysierzelle geschaltet wird und die Gegenelektrode aus einem gegenüber Flußsäure resistenten Material, vorzugsweise aus Graphit, besteht.The invention takes a different approach to solving the problem the production of a structured surface of a silicon body with a maximum Light absorption and is characterized by a method of the type mentioned at the beginning, that the structure is created in the form of honeycombs etched into the surface will. It is within the scope of the invention that the honeycomb-shaped structure by electrolytic etching is generated in a hydrofluoric acid electrolyte, the from Silicon existing body as a positively polarized electrode of an electrolysis cell is switched and the counter electrode is made of a hydrofluoric acid resistant Material, preferably made of graphite.
Es hat sich als vorteilhaft erwiesen, dem Elektrolyten ein Netzmittel zur Verbesserung der Benetzung des Siliziumkörpers zuzusetzen, wobei insbesondere Alkohol oder saure Netzmittel auf Formaldehydbasis (z.B. Mirasol der Fa. Tetenal) verwendet werden. Um die benötigte Stromdichte bei der Elektrolyse zu erreichen, wird der Siliziumkörper mit Licht geeigneter Intensität (50 -500 mW/cm2 entsprechend ungefähr 104 bis 105 lux) beleuchtet.It has proven advantageous to add a wetting agent to the electrolyte add to improve the wetting of the silicon body, in particular Alcohol or acidic wetting agents based on formaldehyde (e.g. Mirasol from Tetenal) be used. To achieve the required current density in electrolysis, the silicon body with light of suitable intensity (50-500 mW / cm2 accordingly approximately 104 to 105 lux) illuminated.
Weitere Ausgestaltungen und Weiterbildungen der Erfindung gehen aus den Unteransprüchen sowie nachfolgend aus der anhand der Figuren 1 und 2 gegebenen Beschreibung hervor. Dabei zeigt die Figur 1 eine Schnittdarstellung eines nach der Erfindung hergestellten Siliziumkörpers und die Figur 2 schematisch den Ätzprozeß einer Elektrolysierzelle.Further refinements and developments of the invention are based the subclaims and below from the given with reference to Figures 1 and 2 Description. Here, FIG. 1 shows a sectional view of a the silicon body produced according to the invention and FIG. 2 schematically shows the etching process an electrolysis cell.
Figur 1: Mit dem Bezugszeichen 1 ist eine aus polykristallinem Silizium bestehende, n-dotierte Scheibe bezeichnet, die durch elektrolytische Ätzung an ihrer Oberfläche 4 (wie in Figur 2 beschrieben) mit einer wabenzellenartigen Struktur (siehe Pfeile 2) versehen ist. Die Weite und Tiefe der Wabenzellen 2 beträgt dabei 10 - 20 um; die Wände 3 sind dagegen nur 2 - 5 um dick. Innerhalb dieser Wabenzellen 2 erfolgt bei Lichteinfall eine Vielfachreflexion und dadurch Totalabsorption von Licht aller Wellenlängen; die Oberfläche erscheint dadurch tief-schwarz. Es wurde festgestellt, daß ein solcher Siliziumkörper mit der wabenartigen Oberfläche im Vergleich zu einem nicht geätzten Siliziumkörper bei Beleuchtung einen bis zu 30% höheren Fotostrom erzeugt. Damit ist ein höherer Solarzellenwirkungsgrad zu erreichen als bei Solarzellen mit normaler Oberfläche.Figure 1: With the reference number 1 is one made of polycrystalline silicon existing, n-doped disc referred to by electrolytic etching on their Surface 4 (as described in Figure 2) with a honeycomb-like structure (see arrows 2) is provided. The width and depth of the honeycomb cells 2 are here 10-20 µm; the walls 3, on the other hand, are only 2-5 μm thick. Inside these honeycomb cells 2 a multiple reflection occurs when light falls, and thereby Total absorption of light of all wavelengths; this makes the surface appear deep black. It it was found that such a silicon body with the honeycomb-like surface compared to a non-etched silicon body when illuminated up to 30% more photocurrent generated. This leads to a higher solar cell efficiency than with solar cells with a normal surface.
Figur 2: Die in Figur 1 gezeigte wabenzellenförmige Oberflächenstruktur entsteht durch definierte elektrolytische Auflösung. Dazu wird in einem, in einem Behälter 5 befindlichen wäßrigen Flußsäureelektrolyten 6 der n-dotierte Siliziumkörper 1 als positiv gepolte Elektrode der Elektrolysierzelle geschaltet. Die Gegenelektrode 7 kann aus beliebigem, gegenüber Flußsäure resistentem Material, z.B. aus Platin oder vorzugsweise aus Graphit, bestehen. Die wabenzellenartige Oberflächenstruktur 2 entsteht bei Stromdichten zwischen ungefähr 5 - 30 mA/cm2 und Spannungen--von 2 - 10 V. Die Spannungsquelle ist mit 8, die Zuführungen mit 9 bezeichnet. Um die benötigte Stromdichte zu erreichen, wird der Siliziumkörper 1 mit Licht geeigneter Intensität beleuchtet (in der Figur nicht dargestellt). Unter diesen Bedingungen erfolgt anodische Auflösung an den nicht mit einer Schutzschicht bedeckten Oberflächen des Siliziumkörpers 1 in solcher Weise, daß die gewünschte Wabenzellenstruktur 2 erzeugt wird. Die zur Erzielung ausreichend tiefer Waben notwendige Ätzzeit hängt von der Flußsäurekonzentration ab und beträgt bei einer Flußsäurekonzentration von ungefähr 2,5 % etwa 10 - 20 Minuten. Durch geeignete Wahl der Parameter: Spannung, Stromdichte und Flußsäurekonzentration läßt sich die Ätzdauer auch kürzer halten. Eine gelegentlich der wabenartigen Oberfläche sich überlagernde gelbliche Schicht läßt sich durch kurzzeitiges Eintauchen des Körpers 1, 2 in 20%ige Kalilauge leicht entfernen.FIG. 2: The honeycomb cell-shaped surface structure shown in FIG. 1 arises through defined electrolytic dissolution. This is done in one, in one Container 5 located aqueous hydrofluoric acid electrolyte 6 of the n-doped silicon body 1 connected as a positive electrode of the electrolysis cell. The counter electrode 7 can be made of any material resistant to hydrofluoric acid, e.g. platinum or preferably made of graphite. The honeycomb-like surface structure 2 arises at current densities between approx. 5 - 30 mA / cm2 and voltages - of 2 - 10 V. The voltage source is labeled 8, the supply lines 9. To the To achieve the required current density, the silicon body 1 is more suitable with light Illuminated intensity (not shown in the figure). Under these conditions anodic dissolution takes place on the surfaces not covered with a protective layer of the silicon body 1 in such a way that the desired honeycomb cell structure 2 is produced. The etching time necessary to achieve sufficiently deep honeycombs depends on the hydrofluoric acid concentration and is at a hydrofluoric acid concentration of about 2.5% about 10-20 minutes. By suitable choice of the parameters: voltage, The etching time can also be kept shorter with the current density and hydrofluoric acid concentration. A yellowish layer occasionally overlapping the honeycomb-like surface layer can be easily immersed in 20% potassium hydroxide solution by briefly immersing the body 1, 2 remove.
Vor der Ätzbehandlung hell reflektierend erscheinende Siliziumoberflächen sind nach der Behandlung dunkel bis tief-schwarz.Silicon surfaces that appear brightly reflective before the etching treatment are dark to deep black after treatment.
Zur Herstellung von Solarzellen werden in die mit der wabenzellenartigen Struktur versehene Oberfläche (Frontseite der Zelle) Dotierstoffatome vom p-Leitungstyp durch Diffusion oder Ionenimplantation eingebracht und ein pn-iJbergang erzeugt. Die Kontaktierung erfolgt in bekannter Weise, z.B. durch Elektrolyt-Kontakte oder Schottky-Kontakte, um den Ohm'schen Widerstand der Strom sammelnden Schichten gering zu halten.For the production of solar cells are in those with the honeycomb cell-like Structured surface (front side of the cell) dopant atoms of the p-conductivity type introduced by diffusion or ion implantation and generated a pn junction. The contact is made in a known manner, e.g. by electrolyte contacts or Schottky contacts, in order to reduce the ohmic resistance of the current-collecting layers to keep.
Andere Anwendungsmöglichkeiten für das Verfahren nach der Lehre der Erfindung liegen auf dem Gebiet der Katalyse, wo Substrate aus Silizium mit großem Oberflächen/ Volumen-Verhältnis vorteilhaft sind. Das Katalysatormaterial wird dazu auf die wabenzellenartige Oberfläche aufgebracht. Bei Verwendung sehr dünner (ungefähr 20 - 50 pm dicker) Siliziumkristallscheiben können die Wabenzellenkanäle auch die ganze Kristallscheibe durchdringen. Dies ermöglicht die Herstellung von sehr effektiven Durchlauf-Katalysatoren.Other possible uses for the method according to the teaching of Invention are in the field of catalysis, where substrates made of silicon with large Surface / volume ratios are advantageous. The catalyst material becomes this applied to the honeycomb-like surface. When using very thin (approx The honeycomb cell channels can also use the silicon crystal wafers 20 - 50 μm thick penetrate whole crystal disc. This enables the production of very effective Continuous catalysts.
2 Figen 10 P e,ntGansprüche - Leerseite - 2 Fig. 10 P e, ntG claims - blank page -
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833324232 DE3324232A1 (en) | 1983-07-05 | 1983-07-05 | Process for producing crystalline silicon bodies having a structure which increases the surface area, and use of said bodies as substrates for solar cells and catalysts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833324232 DE3324232A1 (en) | 1983-07-05 | 1983-07-05 | Process for producing crystalline silicon bodies having a structure which increases the surface area, and use of said bodies as substrates for solar cells and catalysts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3324232A1 true DE3324232A1 (en) | 1985-01-17 |
| DE3324232C2 DE3324232C2 (en) | 1992-05-27 |
Family
ID=6203210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833324232 Granted DE3324232A1 (en) | 1983-07-05 | 1983-07-05 | Process for producing crystalline silicon bodies having a structure which increases the surface area, and use of said bodies as substrates for solar cells and catalysts |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3324232A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5128514A (en) * | 1987-07-31 | 1992-07-07 | Siemens Aktiengesellschaft | Black radiator for use as an emitter in calibratable gas sensors |
| EP0773590A1 (en) * | 1995-11-13 | 1997-05-14 | Photowatt International S.A. | Solar cell comprising multicrystalline silicon and method of texturing the surface of P-type multicrystalline silicon |
| EP1094527A2 (en) * | 1993-07-29 | 2001-04-25 | Gerhard Dr. Willeke | Flat component with a grid of through holes |
| US6340640B1 (en) | 1997-04-23 | 2002-01-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell, a method of producing the same and a semiconductor producing apparatus |
| WO2003054974A1 (en) * | 2001-12-13 | 2003-07-03 | Asahi Glass Company, Limited | Cover glass for a solar battery |
| US6750153B2 (en) | 2000-10-24 | 2004-06-15 | Nanosciences Corporation | Process for producing macroscopic cavities beneath the surface of a silicon wafer |
| WO2008145097A2 (en) * | 2007-05-25 | 2008-12-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photosensitive semiconductor component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4147564A (en) * | 1977-11-18 | 1979-04-03 | Sri International | Method of controlled surface texturization of crystalline semiconductor material |
| US4229233A (en) * | 1979-02-05 | 1980-10-21 | International Business Machines Corporation | Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching |
| DE2952431A1 (en) * | 1979-12-27 | 1981-07-02 | Solarex Corp., 14001 Rockville, Md. | Solar energy cell made from silicon wafer - where surface of wafer is etched to produce recesses reducing reflection and increasing light absorption |
-
1983
- 1983-07-05 DE DE19833324232 patent/DE3324232A1/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4147564A (en) * | 1977-11-18 | 1979-04-03 | Sri International | Method of controlled surface texturization of crystalline semiconductor material |
| US4229233A (en) * | 1979-02-05 | 1980-10-21 | International Business Machines Corporation | Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching |
| DE2952431A1 (en) * | 1979-12-27 | 1981-07-02 | Solarex Corp., 14001 Rockville, Md. | Solar energy cell made from silicon wafer - where surface of wafer is etched to produce recesses reducing reflection and increasing light absorption |
Non-Patent Citations (3)
| Title |
|---|
| Avita,Y. et. al.: Formation and Properties of Porous Silicon Films. In: J. Electrochem. Soc.: Solid-State Science and Technology. Bd. 124, Nr. 2, Sept. 1977, S. 285-295 * |
| Doo, V.Y.: Making Silicon Nozzles for Ink Jet Heads. In: IBM TDB, Bd. 19, Nr. 6, Nov. 1976, S. 2247-2248 * |
| Theunissen, M.J.J.: Etch Channel... Acid. In: J. Electrochem. Soc.: Solid-State Science and Technology, Bd. 119, Nr. 3, März 1972, S. 351-360 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5128514A (en) * | 1987-07-31 | 1992-07-07 | Siemens Aktiengesellschaft | Black radiator for use as an emitter in calibratable gas sensors |
| EP1094527A2 (en) * | 1993-07-29 | 2001-04-25 | Gerhard Dr. Willeke | Flat component with a grid of through holes |
| EP1094527A3 (en) * | 1993-07-29 | 2007-06-20 | Gerhard Dr. Willeke | Flat component with a grid of through holes |
| EP0773590A1 (en) * | 1995-11-13 | 1997-05-14 | Photowatt International S.A. | Solar cell comprising multicrystalline silicon and method of texturing the surface of P-type multicrystalline silicon |
| FR2741194A1 (en) * | 1995-11-13 | 1997-05-16 | Photowatt Int | SOLAR CELL COMPRISING MULTICRYSTALLINE SILICON AND METHOD FOR TEXTURIZING THE SURFACE OF P-TYPE MULTICRYSTALLINE SILICON |
| US5949123A (en) * | 1995-11-13 | 1999-09-07 | Photowatt International S.A. | Solar cell including multi-crystalline silicon and a method of texturizing the surface of p-type multi-crystalline silicon |
| US6391145B1 (en) | 1997-04-23 | 2002-05-21 | Mitsubishi Denki Kabushiki Kaisha | Solar cell, a method of producing the same and a semiconductor producing apparatus |
| US6340640B1 (en) | 1997-04-23 | 2002-01-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell, a method of producing the same and a semiconductor producing apparatus |
| US6750153B2 (en) | 2000-10-24 | 2004-06-15 | Nanosciences Corporation | Process for producing macroscopic cavities beneath the surface of a silicon wafer |
| WO2003054974A1 (en) * | 2001-12-13 | 2003-07-03 | Asahi Glass Company, Limited | Cover glass for a solar battery |
| US7026542B2 (en) | 2001-12-13 | 2006-04-11 | Asahi Glass Company, Limited | Cover glass for a solar battery, a method for producing the cover glass and a solar battery module using the cover glass |
| AU2002366923B2 (en) * | 2001-12-13 | 2007-03-22 | Asahi Glass Company Limited | Cover glass for a solar battery |
| WO2008145097A2 (en) * | 2007-05-25 | 2008-12-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photosensitive semiconductor component |
| WO2008145097A3 (en) * | 2007-05-25 | 2009-02-19 | Fraunhofer Ges Forschung | Photosensitive semiconductor component |
| US8217483B2 (en) | 2007-05-25 | 2012-07-10 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E. V. | Photosensitive semiconductor component |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3324232C2 (en) | 1992-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4202455C1 (en) | ||
| EP0742959B1 (en) | Method of producing a solar cell and solar cell produced using this method | |
| DE69811511T2 (en) | MANUFACTURING METHOD FOR A PHOTOVOLTAIC COMPONENT | |
| DE4315959C2 (en) | Method for producing a structured layer of a semiconductor material and a doping structure in a semiconductor material under the action of laser radiation | |
| DE69933972T2 (en) | Solar cell battery and manufacturing process | |
| DE69334075T2 (en) | IMPROVED REVERSE HYDROGENATION TECHNIQUE FOR ERROR PASSIVATION IN SILICON SOLAR CELLS. | |
| DE112009000924T9 (en) | A surface roughening method for a substrate and a method of manufacturing a photovoltaic device | |
| DE3431603C2 (en) | Photoelectric converter | |
| DE10050577A1 (en) | Production of semiconductor component used in solar cells comprises forming first semiconductor layer on substrate, producing second semiconductor layer on first layer and removing second layer by laser abrasion | |
| DE4324318C1 (en) | Method for series connection of an integrated thin-film solar cell arrangement | |
| DE3446885A1 (en) | MEASURED SOLAR CELL WITH LASER | |
| DE4217428A1 (en) | High performance silicon crystalline solar cell structure - has more highly doped layer integrated in lightly doped layer in area below metallic contact | |
| DE3508469C2 (en) | ||
| WO2005053037A1 (en) | Method for reducing reflection on semiconductor surfaces | |
| DE3819671C2 (en) | ||
| DE3324232C2 (en) | ||
| EP0477424B1 (en) | Wet chemical etching to produce structured surfaces of silicon | |
| EP0054157A2 (en) | Solar cell with increased efficiency | |
| DE2812547C2 (en) | ||
| DE19915666A1 (en) | Method and device for selective contacting of solar cells | |
| DE2721280C2 (en) | Method for producing an input screen of an image intensifier | |
| DE3328902A1 (en) | DISPLAY WITH A NUMBER OF LIGHT-EMITTING SEMICONDUCTOR COMPONENTS | |
| DE2654946A1 (en) | PROCESS FOR MANUFACTURING STRIP-SHAPED, IN ESSENTIAL SINGLE-CRYSTALLINE BODIES, IN PARTICULAR FOR MANUFACTURING SOLAR CELLS | |
| DE2534978A1 (en) | ELECTRICALLY PUMPED SOLID-STATE LASER AND METHOD OF ITS MANUFACTURING | |
| DE2924045A1 (en) | Solar cell with upper fluorescent layer - has reflective upper surfaces of layer sloping to direct radiation downwards onto cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8125 | Change of the main classification |
Ipc: H01L 21/306 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |