DE3316184C2 - Arrangement to improve the electromagnetic compatibility of low-frequency amplifiers - Google Patents
Arrangement to improve the electromagnetic compatibility of low-frequency amplifiersInfo
- Publication number
- DE3316184C2 DE3316184C2 DE3316184A DE3316184A DE3316184C2 DE 3316184 C2 DE3316184 C2 DE 3316184C2 DE 3316184 A DE3316184 A DE 3316184A DE 3316184 A DE3316184 A DE 3316184A DE 3316184 C2 DE3316184 C2 DE 3316184C2
- Authority
- DE
- Germany
- Prior art keywords
- capacitor
- arrangement
- low
- electromagnetic compatibility
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 241000239290 Araneae Species 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49589—Capacitor integral with or on the leadframe
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Bei der Anordnung zur Verbesserung der elektromagnetischen Verträglichkeit bei Niederfrequenz-Verstärkern handelt es sich darum, daß ein Kondensator in Chip-Ausführung ohne Anschlußdrähte sehr nahe bei den Elektroden des Eingangstransistors, bzw. an den entsprechenden Anschlüssen des Gehäuses einer integrierten Schaltung angeschlossen wird. Es ist zweckmäßig, daß der Chip-Kondensator innerhalb des Gehäuses einer integrierten Schaltung direkt mit zwei Anschlüssen einer für die Leiterzuführung zum Halbleiter-Chip vorhandenen sogenannten Leiterspinne elektrisch leitend verbunden wird.The arrangement for improving the electromagnetic compatibility of low-frequency amplifiers is that a capacitor in chip design without connecting wires is connected very close to the electrodes of the input transistor or to the corresponding connections of the housing of an integrated circuit. It is expedient that the chip capacitor inside the housing of an integrated circuit is connected in an electrically conductive manner directly to two connections of what is known as a conductor spider, which is provided for the conductor feed to the semiconductor chip.
Description
Die Erfindung betrifft eine Anordnung zur Verbesserung der elektromagnetischen Verträglichkeit bei Nie-ιι6ιιΓ€€[ίΐ€ΠΖ- TciaiariCcr The invention relates to an arrangement for improving the electromagnetic compatibility in the case of Nie- ιι6ιιΓ €€ [ίΐ € ΠΖ- TciaiariCcr
öuci cül rtGöuci cül rtG
den Eingangstransistor angeschaltet ist, daß hochfrequente Störungen abgeleitet werden und das Nutzsignal nicht beeinflussen können.the input transistor is turned on, that high frequency Interference can be derived and not affect the useful signal.
Niederfrequenz-Verstärker werden u.a. bei Fernsprechapparaten eingesetzt, wenn die Empfindlichkeit des Microfons nicht ausreicht, oder um einen Freisprechbetrieb zu ermöglichen. Eine derartige Schaltungsanordnung für einen Verstärker für einen elektroakustischen Wandler, der in einen Fernsprechapparat einsetzbar ist, w' -d dargestellt und beschrieben in der DE-AS 28 12 735. Im Prinzip besteht ein solcher Verstärker aus einei Transistorschaltung, an deren Eingang das Microfon angeschlossen ist, and fassen Ausgang auf die Teilnehmeranschlußleitung wirst. Das Microfon kann dabei als Generator mit einem Innenwiderstand aufgefaßt werden, der Nutzsignale, also Sprechspannungen abgibt. Der Eingang eines solchen Niederfrequenz-Verstärkers ist grundsätzlich in der Lage, neben den Nutzsignalen auch Störungen aufzunehmen. Im Ersatzschaltbild wie es in der F i g. 1 der vorliegenden Patentanmeldung dargestellt ist, wird gezeigt, daß ein hochfrequenter Störgenerator SC in Reihe geschaltet mit dem Nutzsignal-Generator G vorstellbar ist. Die hochfrequenten Störgrößen gelangen genau wie die niederfrequenten Nutzsignale in den Eingangskreis des Verstärkers und werden, wenn es sich um amplitudenmodulierte Größen handelt, an der Basis- Emitter-Strekke des Transistors Γ demoduliert. Die dann entstehenden NF-Störgrößen sind vom Nutzsignal nicht mehr zu trennen.Low-frequency amplifiers are used in telephones, for example, when the sensitivity of the microphone is insufficient or to enable hands-free operation. Such a circuit arrangement for an amplifier for an electroacoustic transducer which can be used in a telephone set is shown and described in DE-AS 28 12 735. In principle, such an amplifier consists of a transistor circuit to whose input the microphone is connected is, and will take output on the subscriber line. The microphone can be viewed as a generator with an internal resistance that emits useful signals, i.e. speech voltages. The input of such a low-frequency amplifier is basically able to pick up interferences in addition to the useful signals. In the equivalent circuit as shown in FIG. 1 of the present patent application, it is shown that a high-frequency interference generator SC connected in series with the useful signal generator G is conceivable. The high-frequency disturbance variables get into the amplifier's input circuit just like the low-frequency useful signals and, if they are amplitude-modulated variables, are demodulated at the base-emitter path of the transistor Γ. The resulting low-frequency interference can no longer be separated from the useful signal.
Um diesen unerwünschten Effekt zu beseitigen, ist es bekannt, einen Kondensator so an den Eingang eines
Verstärkers anzuschalten, daß die hochfrequenten Störungen an der Basis-Emitter-Strecke eines Transistors
vorbei geleitet werden. Wie ein derartiger Kondensator im Stromlaufplan anzuordnen ist, wird in der F i g. 1
dargestellt. Dieser Kondensator muß jedoch so genau dimensioniert sein, daß er die Nutzsignale nicht wesentlich
dämpft und trotzdem die Störsignale wirksam dblei-
'. tet. Da die Zuleitung zum Kondensator diese Dimensionierung stark beeinträchtigen können, ist es ratsam, den
Kondensator so dicht wie möglich an der Basis-Emitter-Strecke des Eingangstransistors anzubringen.
' Die Aufgabe der Erfindung besteht deshalb darin, die.
Anordnung eines Entstörkondensators so anzugeben, daß eine optimale Wirkung erzielt wird;In order to eliminate this undesirable effect, it is known to connect a capacitor to the input of an amplifier in such a way that the high-frequency interference is conducted past the base-emitter path of a transistor. How such a capacitor is to be arranged in the circuit diagram is shown in FIG. 1 shown. This capacitor must, however, be dimensioned so precisely that it does not significantly attenuate the useful signals and still effectively dble the interfering signals . tet. Since the lead to the capacitor can seriously affect this dimensioning, it is advisable to attach the capacitor as close as possible to the base-emitter path of the input transistor.
'The object of the invention is therefore that. To specify the arrangement of an interference suppression capacitor in such a way that an optimal effect is achieved;
Diese Aufgabe wird durch eine Anordnung gelöst,This task is solved by an arrangement
wie sie im Patentanspruch angegeben istas indicated in the claim
Damit wird in vorteilhafter Weise erreicht, daß die Induktivitäten der Anschlußdrähte eines Kondensators und der sonstigen Zuleitungen keinen negativen Einfluß auf die Wirksamkeit der Kapazität haben können. Es ist außerdem gewährleistet, daß eine derartige Anordnung in gleicher Wirksamkeit sehr genau reproduzierbar istThis advantageously ensures that the inductances of the connecting wires of a capacitor and the other supply lines cannot have a negative influence on the effectiveness of the capacitance. It is it also ensures that such an arrangement can be reproduced very precisely with the same effectiveness
Ein Ausführungsbeisptel der Erfindung wird nachfolgend anhand von Zeichnungen näher erläutert Es. zeigt Fig. 1 den Prinzip-Stromlaufplan eines Verstärkereingangs, An exemplary embodiment of the invention is shown below Explained in more detail with reference to drawings. Fig. 1 shows the principle circuit diagram of an amplifier input,
F i g. 2 das Anschlußprinzip einer integrierten Schaltung.
In der F i g. 1 ist dargestellt, wie die aus einein Gene-Rstor
C mit einem inneren Widerstand Ri stammenden Nutzsignale an den Anschlußpunkt A 1 des Eingangs
eines Verstärkers gelangen. Es sei angenommen, daß außerdem von einem hochfrequenten Störgener^tor SG
Störgrößen ebenfalls auf diesen Eingang des Verstärkers gelangen. Als Störgeneratoren können Radiosender
oder sonstige vorübergehend auftretende elektromagnetische Einstrahlungen in Frage kommen. Damit
diese Störgrößen nicht vom Verstärker aufgenommen und verstärkt werden, ist ein Kondensator C so mit dem
Eingangstransistor T verbunden, daß diese Störungen am Transistor T vorbei geleitet werden Wie aus der
Zeichnung hervorgehe, ist dieser Kondensator C zwischen den Anschlußpunkten A 1 und A 2, also direkt an
Basis und Emitter des Transistors T angeschlossen. In der Zeichnung ist außerdem noch ein Kollektorwiderstand
R 1 und ein Emitterwiderstand R 2 angedeutet wie dies bei derartigen Transistorverstärkern üblich ist.
Die Fig.2 zeigt den grundsätzlichen Aufbau einer integrierten Halbleiterschaltung. Diese besteht im wesentlichen
aus einem Halbleiter-Chip HCH in dem neben dem bereits erwähnten Transistor T noch weitere
Schaltelemente, beispielsweise weitere Verstärkerstufen in integrierter Form aufgebracht sind. Dieses Halbleiter-Chip
HCHist auf einem 'solierl r^per angebracht.F i g. 2 the connection principle of an integrated circuit.
In FIG. 1 shows how the useful signals originating from a Gene-Rstor C with an internal resistor Ri arrive at the connection point A 1 of the input of an amplifier. It is assumed that disturbance variables also arrive at this input of the amplifier from a high-frequency disturbance generator SG. Radio transmitters or other temporarily occurring electromagnetic radiation can be used as interference generators. Thus, these disturbances are not absorbed by the amplifier and amplified, a capacitor C is connected to the input transistor T, that these disorders are passed to the transistor T by As is apparent from the drawing, this capacitor C between the connection points A 1 and A 2, so connected directly to the base and emitter of the transistor T. In the drawing, a collector resistor R 1 and an emitter resistor R 2 are also indicated, as is usual with such transistor amplifiers. 2 shows the basic structure of an integrated semiconductor circuit. This essentially consists of a semiconductor chip HCH in which, in addition to the transistor T already mentioned, further switching elements, for example further amplifier stages, are applied in integrated form. This semiconductor chip HCH is attached to a 'solierl r ^ per.
auf dem außerdem eine sogenannte Leiterspinne LSP befestigt ist Diese Leiterspinne beinhaltet außerdem
gleichzeitig die Anschlußpins und dient dazu, die Stromversorgung und die elektrischen Signale dem Halbleiter-Chip
HCH zuzuführen bzw. von ihm abzuführen. Zu diesem Zweck werden die entsprechenden Schaltpunkte
des Halbleiter-Chips HCH über Bonddrähte BD mit den elektrisch leitenden Streifen der Leiterspinne LSP
verbunden.
Der zur Verbesserung der elektromagnetischen Verträgüchkeit,
also zur Beseitigung von hochfrequenten Störbeeinflussungen vorgesehene Kondensator C wird
erfndungsgemäß direkt auf den Streifen der Leiterspinne LSP angeordnet Er ist somit räumlich unmittelbar
mit den Basis- und Emitterelektroden des Eingangstransistors T verbunden, so daß keine induktiven Auswirkungen
entstehen. Durch die direkte Kontaktierung auf die als Anschlußpins A 3 und A 2 dienenden Leiterstreifen
der Leiterspinne LSP wird auch unmittelbar am Kondensator der Einfluß von Leiterinduktivitäten vermieden.
Da der Kondensator i? eine Größenordnung ■ -haben muß, die eine direkte Integration in das Halblei·
'·'- -ter-Chip nicht zuläßt, ist es,außerdem von besonderem
"Vorteil, daß bei der erfindungsgemäßen Anordnung der 'Kondensator C innerhalb des Gehäuses untergebracht
werden kann.on which a so-called conductor spider LSP is also attached. This conductor spider also contains the connection pins and is used to supply the power supply and the electrical signals to the semiconductor chip HCH or to dissipate them from it. For this purpose, the corresponding switching points of the semiconductor chip HCH are connected to the electrically conductive strips of the conductor spider LSP via bonding wires BD .
The capacitor C , which is intended to improve the electromagnetic compatibility, i.e. to eliminate high-frequency interference, is arranged directly on the strip of the LSP conductor spider according to the invention.It is thus spatially directly connected to the base and emitter electrodes of the input transistor T , so that no inductive effects arise. The direct contact with the conductor strips of the conductor spider LSP serving as connection pins A 3 and A 2 also avoids the influence of conductor inductances directly on the capacitor. Since the capacitor i? ■ must -have a magnitude that is a direct integration into the semiconducting · '·' - does not allow -th chip, it is also of particular "advantage that can be accommodated in the inventive arrangement of the 'capacitor C within the housing .
Hierzu 1 Blatt Zeichnungen1 sheet of drawings
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3316184A DE3316184C2 (en) | 1983-05-04 | 1983-05-04 | Arrangement to improve the electromagnetic compatibility of low-frequency amplifiers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3316184A DE3316184C2 (en) | 1983-05-04 | 1983-05-04 | Arrangement to improve the electromagnetic compatibility of low-frequency amplifiers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3316184A1 DE3316184A1 (en) | 1984-11-22 |
DE3316184C2 true DE3316184C2 (en) | 1985-08-14 |
Family
ID=6198069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3316184A Expired DE3316184C2 (en) | 1983-05-04 | 1983-05-04 | Arrangement to improve the electromagnetic compatibility of low-frequency amplifiers |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3316184C2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4027686A1 (en) * | 1989-08-31 | 1991-03-14 | Toshiba Kawasaki Kk | INTEGRATED CIRCUIT AND YOUR CONNECTION CIRCUIT |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19509295A1 (en) * | 1995-03-15 | 1996-09-19 | Telefunken Microelectron | Common-base transistor amplifier circuit for FM radio stage |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE6803418U (en) * | 1968-10-23 | 1969-03-13 | Gebr Buehler Nachf Gmbh | SMALL ELECTRIC MOTOR |
FR2301952A1 (en) * | 1975-02-22 | 1976-09-17 | Lucas Industries Ltd | Brushless generator with double-sided printed circuit board - with holes for capacitors to suppress interference |
AT361546B (en) * | 1977-03-31 | 1981-03-10 | Akg Akustische Kino Geraete | CIRCUIT ARRANGEMENT FOR A TRANSISTORIZED AMPLIFIER FOR AN ELECTROACOUSTIC CONVERTER |
US4329605A (en) * | 1980-10-14 | 1982-05-11 | General Motors Corporation | Electric motor having radio frequency interference radiation suppression |
-
1983
- 1983-05-04 DE DE3316184A patent/DE3316184C2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4027686A1 (en) * | 1989-08-31 | 1991-03-14 | Toshiba Kawasaki Kk | INTEGRATED CIRCUIT AND YOUR CONNECTION CIRCUIT |
Also Published As
Publication number | Publication date |
---|---|
DE3316184A1 (en) | 1984-11-22 |
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OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
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8327 | Change in the person/name/address of the patent owner |
Owner name: TELENORMA TELEFONBAU UND NORMALZEIT GMBH, 6000 FRA |
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8365 | Fully valid after opposition proceedings | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TELENORMA GMBH, 6000 FRANKFURT, DE |
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8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |