DE3273694D1 - A protective device for a semiconductor integrated circuit - Google Patents
A protective device for a semiconductor integrated circuitInfo
- Publication number
- DE3273694D1 DE3273694D1 DE8282303327T DE3273694T DE3273694D1 DE 3273694 D1 DE3273694 D1 DE 3273694D1 DE 8282303327 T DE8282303327 T DE 8282303327T DE 3273694 T DE3273694 T DE 3273694T DE 3273694 D1 DE3273694 D1 DE 3273694D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- semiconductor integrated
- protective device
- protective
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56100505A JPS583285A (ja) | 1981-06-30 | 1981-06-30 | 半導体集積回路の保護装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3273694D1 true DE3273694D1 (en) | 1986-11-13 |
Family
ID=14275794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282303327T Expired DE3273694D1 (en) | 1981-06-30 | 1982-06-25 | A protective device for a semiconductor integrated circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4541002A (de) |
EP (1) | EP0068844B1 (de) |
JP (1) | JPS583285A (de) |
DE (1) | DE3273694D1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0638496B2 (ja) * | 1983-06-27 | 1994-05-18 | 日本電気株式会社 | 半導体装置 |
JPS6150358A (ja) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | 半導体集積回路 |
BR8606541A (pt) * | 1985-04-08 | 1987-08-04 | Sgs Semiconductor Corp | Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos |
JPS61263254A (ja) * | 1985-05-17 | 1986-11-21 | Nec Corp | 入力保護装置 |
JPH0620110B2 (ja) * | 1985-10-07 | 1994-03-16 | 日本電気株式会社 | 半導体装置 |
JPH0673377B2 (ja) * | 1985-11-27 | 1994-09-14 | 日本電気株式会社 | 入力保護回路 |
US4803536A (en) * | 1986-10-24 | 1989-02-07 | Xerox Corporation | Electrostatic discharge protection network for large area transducer arrays |
KR900008746B1 (ko) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | 접합 파괴장치 반도체장치 |
US4802054A (en) * | 1987-03-13 | 1989-01-31 | Motorola, Inc. | Input protection for an integrated circuit |
US4807080A (en) * | 1987-06-15 | 1989-02-21 | Zilog, Inc. | Integrated circuit electrostatic discharge input protection |
EP0355501B1 (de) * | 1988-08-16 | 1994-02-16 | Siemens Aktiengesellschaft | Bipolartransistor als Schutzelement für integrierte Schaltungen |
US4958211A (en) * | 1988-09-01 | 1990-09-18 | General Electric Company | MCT providing turn-off control of arbitrarily large currents |
US4916572A (en) * | 1989-02-27 | 1990-04-10 | Teledyne Industries, Inc. | Circuitry for protecting against load voltage transients in solid state relay circuits |
US4931778A (en) * | 1989-02-27 | 1990-06-05 | Teledyne Industries, Inc. | Circuitry for indicating the presence of an overload or short circuit in solid state relay circuits |
US4924344A (en) * | 1989-02-27 | 1990-05-08 | Teledyne Industries, Inc. | Circuitry for protection against electromotively-induced voltage transients in solid state relay circuits |
US5212108A (en) * | 1991-12-13 | 1993-05-18 | Honeywell Inc. | Fabrication of stabilized polysilicon resistors for SEU control |
JPH06232354A (ja) * | 1992-12-22 | 1994-08-19 | Internatl Business Mach Corp <Ibm> | 静電気保護デバイス |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4352997A (en) * | 1977-05-31 | 1982-10-05 | Texas Instruments Incorporated | Static MOS memory cell using inverted N-channel field-effect transistor |
GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
JPS54111792A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS54116887A (en) * | 1978-03-02 | 1979-09-11 | Nec Corp | Mos type semiconductor device |
JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
-
1981
- 1981-06-30 JP JP56100505A patent/JPS583285A/ja active Pending
-
1982
- 1982-06-25 DE DE8282303327T patent/DE3273694D1/de not_active Expired
- 1982-06-25 EP EP82303327A patent/EP0068844B1/de not_active Expired
- 1982-06-28 US US06/393,117 patent/US4541002A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0068844A1 (de) | 1983-01-05 |
US4541002A (en) | 1985-09-10 |
EP0068844B1 (de) | 1986-10-08 |
JPS583285A (ja) | 1983-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |