DE3262385D1 - Device for the pulsed electron beam processing of a specimen - Google Patents
Device for the pulsed electron beam processing of a specimenInfo
- Publication number
- DE3262385D1 DE3262385D1 DE8282400708T DE3262385T DE3262385D1 DE 3262385 D1 DE3262385 D1 DE 3262385D1 DE 8282400708 T DE8282400708 T DE 8282400708T DE 3262385 T DE3262385 T DE 3262385T DE 3262385 D1 DE3262385 D1 DE 3262385D1
- Authority
- DE
- Germany
- Prior art keywords
- specimen
- electron beam
- beam processing
- pulsed electron
- pulsed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8108449A FR2504727A1 (fr) | 1981-04-28 | 1981-04-28 | Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3262385D1 true DE3262385D1 (en) | 1985-03-28 |
Family
ID=9257870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282400708T Expired DE3262385D1 (en) | 1981-04-28 | 1982-04-20 | Device for the pulsed electron beam processing of a specimen |
Country Status (5)
Country | Link |
---|---|
US (1) | US4527044A (de) |
EP (1) | EP0064003B1 (de) |
JP (1) | JPS57186325A (de) |
DE (1) | DE3262385D1 (de) |
FR (1) | FR2504727A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222633A (ja) * | 1986-03-25 | 1987-09-30 | Sharp Corp | 半導体素子の製造方法 |
US4894511A (en) * | 1986-08-26 | 1990-01-16 | Physical Sciences, Inc. | Source of high flux energetic atoms |
US4731338A (en) * | 1986-10-09 | 1988-03-15 | Amoco Corporation | Method for selective intermixing of layered structures composed of thin solid films |
US5003178A (en) * | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
US4904866A (en) * | 1988-11-17 | 1990-02-27 | Applied Electron Corporation | Wide area soft vacuum abnormal glow electron beam discharge hardening process |
US5159170A (en) * | 1991-04-26 | 1992-10-27 | International Business Machines Corporation | Grid structure for reducing current density in focussed ion beam |
US5449989A (en) * | 1992-07-31 | 1995-09-12 | Correa; Paulo N. | Energy conversion system |
CA2126251A1 (en) | 1994-02-18 | 1995-08-19 | Ronald Sinclair Nohr | Process of enhanced chemical bonding by electron beam radiation |
US5465030A (en) * | 1995-01-20 | 1995-11-07 | The United States Of America As Represented By The Secretary Of The Army | Trigger apparatus for spark gap dischargers |
WO2007149460A2 (en) * | 2006-06-20 | 2007-12-27 | Chism William W | Method of direct coulomb explosion in laser ablation of semiconductor structures |
FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3955091A (en) * | 1974-11-11 | 1976-05-04 | Accelerators, Inc. | Method and apparatus for extracting well-formed, high current ion beams from a plasma source |
US3950187A (en) * | 1974-11-15 | 1976-04-13 | Simulation Physics, Inc. | Method and apparatus involving pulsed electron beam processing of semiconductor devices |
US4082958A (en) * | 1975-11-28 | 1978-04-04 | Simulation Physics, Inc. | Apparatus involving pulsed electron beam processing of semiconductor devices |
US4301391A (en) * | 1979-04-26 | 1981-11-17 | Hughes Aircraft Company | Dual discharge plasma device |
US4335297A (en) * | 1979-09-18 | 1982-06-15 | Spire Corporation | Electron beam processor |
US4344019A (en) * | 1980-11-10 | 1982-08-10 | The United States Of America As Represented By The United States Department Of Energy | Penning discharge ion source with self-cleaning aperture |
-
1981
- 1981-04-28 FR FR8108449A patent/FR2504727A1/fr active Granted
-
1982
- 1982-04-20 DE DE8282400708T patent/DE3262385D1/de not_active Expired
- 1982-04-20 EP EP82400708A patent/EP0064003B1/de not_active Expired
- 1982-04-21 US US06/370,386 patent/US4527044A/en not_active Expired - Fee Related
- 1982-04-28 JP JP57072482A patent/JPS57186325A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0064003A1 (de) | 1982-11-03 |
US4527044A (en) | 1985-07-02 |
FR2504727A1 (fr) | 1982-10-29 |
FR2504727B1 (de) | 1983-05-27 |
EP0064003B1 (de) | 1985-02-20 |
JPS57186325A (en) | 1982-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |