DE3122387A1 - Glass-encapsulated semiconductor diode and method of manufacturing it - Google Patents

Glass-encapsulated semiconductor diode and method of manufacturing it

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Publication number
DE3122387A1
DE3122387A1 DE19813122387 DE3122387A DE3122387A1 DE 3122387 A1 DE3122387 A1 DE 3122387A1 DE 19813122387 DE19813122387 DE 19813122387 DE 3122387 A DE3122387 A DE 3122387A DE 3122387 A1 DE3122387 A1 DE 3122387A1
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Prior art keywords
copper
layer
anode
titanium
diode
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DE19813122387
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German (de)
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Antoine Dipl.-Ing. Dr. 68920 Wettolsheim Torreiter
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TDK Micronas GmbH
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Deutsche ITT Industries GmbH
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Priority to DE19813122387 priority Critical patent/DE3122387A1/en
Publication of DE3122387A1 publication Critical patent/DE3122387A1/en
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01022—Titanium [Ti]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01032—Germanium [Ge]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention relates to a glass-encapsulated semiconductor diode (double-plug diode) and its method of manufacture. The anode and cathode regions of the diode are composed of a titanium/copper layer. Mounted on the copper layer of the anode region is a copper post which, like the rest of the anode region and the cathode region, is coated with pure tin or a tin-containing alloy. The semiconductor diode according to the invention is remarkable for readily solderable contacts which increase the tensile strength of the finished diode and, at the same time, avoid possible ion migration and expensive contact metals.

Description

Glasumhüllte Halbleiterdiode und Verfahren zur Herstellung Die Erfindung betrifft eine glasumhüllte Halbleiterdiode und deren Herstellungsverfahren, sie betrifft insbesondere eine Halbleiterdiode in einem sogenannten Double-Plug-GehäuseJ auch Hartglas-Druckkontaktgehäuse genannt.Glass-Encased Semiconductor Diode and Method of Manufacture The Invention relates to a glass-encased semiconductor diode and its manufacturing process, it relates in particular to a semiconductor diode in a so-called double-plug housingJ also called hard glass pressure contact housing.

P Ein Gehäuse dieser Art besteht aus drei Teilen, nämlich einem Glasröhrchen und den beiden Anschlußdrähten mit der klbenförmigen Verdickung, dem Plug . Beim Einschmelzen des Halbleiterplättchens verschmilzt auch das Röhrchen mit den Verdickungen und beim Erkalten schrumpft das Glasröhrchen und erzeugt den erforderlichen Kontaktdruck auf das Halbleiterplättchen. Bei der Herstellung derartiger Dioden, auch Double-Plug-Dioden genannt, wird nach dem Stand der Technik auf der Vorderseite des Halbleiterplättchens eine Titan-Silber-Metallisierung aufgedampft und anschließend ein sogenannter Silberstiel elektrolytisch aufwachsen gelassen. Das Silber der Doppelschicht hat unter anderem die Aufgabe, den beim Einschelzen auftretenden hohen Druck zu verringern, der durch die unterschiedlichen Ausdehnungskoeffizienten des Glases und des Siliciums des Halbleiterplättchens entsteht. P This type of housing consists of three parts, namely a glass tube and the two connecting wires with the plug-shaped thickening, the plug. At the Melting down the semiconductor wafer also fuses the tube with the thickened areas and when it cools down, the glass tube shrinks and creates the necessary contact pressure on the semiconductor die. In the manufacture of such diodes, including double-plug diodes is called, according to the prior art, on the front side of the semiconductor wafer a titanium-silver metallization is vapor-deposited and then a so-called silver handle left to grow electrolytically. The silver of the double layer has among other things the task of reducing the high pressure that occurs when melting is caused by the different coefficients of expansion of glass and silicon Semiconductor wafer arises.

Beim Einschmelzen treten Temperaturen bis zu 7000C auf, deshalb ist es erforderlich, die Dioden mit Passivierungsmitteln zu behandeln. Diese stellen zumeist Verbindungen von Phosphor und Bor dar und sind hygroskopisch, d.h sie nehmen Wasserdampf auf Auf diese Weise entsteht ein Elektrolyt, der eine Korrosion der Silberstiele bewirkt. Es kommt zur Niederschlagung von Silberionen an bestimmten Stellen der Oberfläche der Dioden und nach einer gewissen Zeit bilden sich leitende Silberbrücken, die zu einem Totalausfall der Dioden führen.When melting down, temperatures of up to 7000C occur, that's why it is necessary to treat the diodes with passivating agents. These places mostly compounds of phosphorus and boron and are hygroscopic, i.e. they take Water vapor in this way creates an electrolyte that can corrode the Silver stems causes. It comes to the precipitation of silver ions on certain Make the Surface of the diodes and form after a certain time conductive silver bridges, which lead to a total failure of the diodes.

Aus der DE-OS 26 43 147 ist eine glasumhüllte Diode bekannt, deren Vorderseite in einem bestimmten Bereich mit einer Titan-Paladium-Silber-Metallisierung versehen ist, auf der ein Silberanschluß ausgebildet ist. Die Rückseite der Diode ist mit einer Nickel- wie auch Silberschicht bedampft. Sowohl auf der Rückseite wie auf der Vorderseite ist eine Gold/Germanium-Legierung aufgedampft, wobei mittels photolithographischer Methoden auf der Vorderseite ein entsprechendes Muster aufgebracht ist, so daß nur der Silberanschluß bedeckt ist.From DE-OS 26 43 147 a glass-encased diode is known whose Front in a certain area with a titanium-palladium-silver-metallization is provided on which a silver terminal is formed. The back of the diode is vapor-coated with a nickel as well as a silver layer. Both on the back as on the front, a gold / germanium alloy is vapor-deposited, with means A corresponding pattern is applied to the front using photolithographic methods so that only the silver terminal is covered.

Durch die metallurgische Wechselwirkung der Gold/Germanium-Legierung mit der Nickel-Eisen-Oberfläche der Verdickungen der Anschlußdrähte bzw. der darauf angeordneten Kupferoberfläche erhöht sich die Zuverlässigkeit der einzelnen Diode. Eine mögliche Silberionenwanderung wird jedoch dadurch nicht ganz verhindert, da die aufgedampfte Gold/Germanium-Legierungsschicht aufgrund des Kanteneffektes den Silberkontakt nicht vollständig umhüllt.Due to the metallurgical interaction of the gold / germanium alloy with the nickel-iron surface of the thickened areas of the connecting wires or those on them arranged copper surface increases the reliability of the individual diode. However, a possible migration of silver ions is not completely prevented as a result the vapor-deposited gold / germanium alloy layer due to the edge effect Silver contact not completely encased.

In der DE-AS 16 14 668 wird eine Halbleitergleichrichter-Anordnung mit großflächigen, gut lötbaren Kontakten beschrieben, die aus einer Aluminiumschicht als erstem Kontaktmetall und einer Silberschicht als zweitem Kontaktmetall bestehen. Dabei ist eine Zwischenschicht als Diffusionsperre angeordnet, die ein Hineinwandern des Aluminiums in das Silber verhindern soll. Als Diffusionssperre werden dabei Metalle wie Nickel, Kobald, Chrom, Titan oder Mangan verwendet.In DE-AS 16 14 668 a semiconductor rectifier arrangement described with large, easily solderable contacts made of an aluminum layer exist as the first contact metal and a silver layer as the second contact metal. In this case, an intermediate layer is arranged as a diffusion barrier that prevents migration to prevent the aluminum into the silver. As a diffusion barrier are thereby Metals such as nickel, cobalt, chromium, titanium or manganese are used.

Der Erfindung liegt demgegenüber die Aufgabe zugrunde, einen mit den kolbenförmigen Verdickungen der Anschlußdrähte. gut lötbaren Kontakt anzugeben, der die Zugfestigkeit der fertigen Dioden erhöht und gleichzeitig die mögliche lonenwanderung wie zusätzlich teure Kontaktmetalle vermeidet. Die Lösung dieser Aufgabe ist im kennzeichnenden Teil des Patentanspruchs 1 angegeben. Vorteilhafte Verfahren zur Herstellung der erfindungsgemäßen Halbleiterdiode sind in den Patentansprüchen 2 und 3 angegeben.The invention is based on the object with one with the piston-shaped thickenings of the connecting wires. indicate a well-solderable contact, which increases the tensile strength of the finished diodes and at the same time the possible ion migration how additionally avoids expensive contact metals. The solution to this problem is in the characterizing part of claim 1 specified. Advantageous method for Production of the semiconductor diode according to the invention are described in claims 2 and 3 indicated.

r Die glasumhüllte Halbleiterdiode nach der Erfindung zeichnet sich demnach dadurch aus, daß Anoden- und Kathodenbereich jeweils einen aus mindestens zwei Schichten bestehenden ohmschen Kontakt aufweist, wobei die Doppelschichten aus Titan und Kupfer gebildet werden. Anstelle des üblichen Silberstiel ist hier ein Kupferstiel aufgedampft, wobei außerdem zur besseren Lötbarkeit sowohl die Vorder- wie die Rückseite der Diode mit reinem Zinn oder einer Zinnlegarung beschichtet sind. r The glass-encased semiconductor diode according to the invention stands out accordingly characterized in that the anode and cathode areas each have at least one has two layers of ohmic contact, the double layers formed from titanium and copper. Instead of the usual silver handle here is a copper stem is vapor-deposited, with both the front and like the back of the diode coated with pure tin or a tin coating are.

Die Herstellung einer derartigen Halbleiterdiode kann z.B.The manufacture of such a semiconductor diode can e.g.

auf die nachstehend angegebene Weise erfolgen: Bei einer nach den üblichen Verfahren hergestellten Halbleiterdiode wird auf die Vorderseite zur Herstellung des ohmschen Kontaktes des Anodenbereiches eine Titanschicht und auf dieser dann eine Kupferschicht aufgedampft. Unter Zuhilfenahme von Photolithographieprozessen läßt man an einen definierten Bereich der Kupferschicht Kupferstiel. aufwachsen. Nach der . üblichen auf der Rückseite des Substrats der Halbleiterdiode vorgenommenen Verringerung der Gesamtdicke wird auch die Rückseite durch Bedampfen mit einer Doppelschicht aus Titan und Kupfer versehen. Anschließend wird sowohl die Vorder- wie die Rückseite mit reinem Zinn oder einer zinnhaltigen Legierung beschichtet, mittels dies geschieht durch Aufdampfen oder stromloser oder elektrischer Abscheidung. Um bei der Verkapselung das Anlöten der Kontakte an den kolbenförmigen Verdickungen der Anschlußdrähte zu verbessern, wird auf bekannte Weise ein Flußmittel wie P203 oder P2 0 3+P 205 auf die Diode aufgebracht, das gleichzeitig auch noch als Passivierungsmittel wirksam ist. Als letzter#Schritt des Herstellungsverfahrens erfolgt das übliche Einschmelzen der Halbleiterdiode zusammen mit den Anschlußdrähten in einem Glasröhrchen.in the following manner: In the case of one after the conventional method manufactured semiconductor diode is on the front side for manufacture of the ohmic contact of the anode area and then a titanium layer on top of it a copper layer evaporated. With the help of photolithography processes one leaves a copper handle on a defined area of the copper layer. grow up. After . customary made on the back of the substrate of the semiconductor diode The reverse side is also reduced in total thickness by vapor deposition with a double layer made of titanium and copper. Then both the front and the back are made with pure tin or a tin-containing alloy coated by means of this is done by vapor deposition or electroless or electrical deposition. Around in the case of encapsulation, soldering the contacts to the bulb-shaped thickenings To improve the lead wires, a flux such as P203 is known in the art or P2 0 3 + P 205 applied to the diode, which also acts as a passivating agent is effective. The last step in the manufacturing process is the usual # Melting the semiconductor diode together with the connecting wires in a glass tube.

Claims (3)

Patentansprüche Öi GlaXumhfillte Halbleiterdiode, mit einem Halbleiterkörper dessen Anoden- und Kathodenbereich jeweils einen aus mindestens zwei Schichten bestehenden ohmschen Kontakt aufweist, mit koaxiale . Zuführungen bildenden in die Glasumhüllung miteingeschmolzenen, kolbenförmige Verdickungen aufweisenden Anschlußdrähten, gekennzeichnet durch folgende Merkmale: - der Anodenbereich besteht aus einer Titan-Kupfer-Doppelschicht, - - auf der Kupferschicht ist in definiertem Bereich. ein Kupferstiel - aufgebracht, - der Kathodenbereich besteht ebenfalls aus einer Titan-Kupfer-Doppel schicht, - sowohl der Anoden- wie auch der Kathodenbereich und der Kupferstiel sind mit reinem Zinn oder einer zinnhaltigen Legierung beschichtet. Claims Öi GlaXumhfillte semiconductor diode, with a semiconductor body its anode and cathode area each consisting of at least two layers Has ohmic contact, with coaxial. Feedings into the glass envelope with fused, piston-shaped thickenings having connecting wires, marked due to the following features: - the anode area consists of a titanium-copper double layer, - - on the copper layer is in a defined area. a copper handle - applied, - the cathode area also consists of a titanium-copper double layer, Both the anode and cathode areas and the copper handle are pure Tin or a tin-containing alloy coated. 2. Verfahren zur Herstellung einer Halbleiterdiode nach Anspruch 1, wobei deren Halbleiterkörper zusammen mit den Anschlußdrähten in einem Glasröhrchen eingeschmolzen wird, gekennzeichnet durch folgende Merkmale: - auf der Vorderseite des Halbleiterkörpers wird zur Ausbildung des Anodenbereiches eine Titanschicht und auf dieser eine Kupferschicht aufgedampft, - auf der Kupferschicht wird an mittels Photolithographieprozessen festgelegten Bereich Kupferstiel aufwachsen gelassen, - die Rückseite des Halbleiterkörpers wird zur Ausbildung des Kathodenbereichs mit einer Titanschicht und diese darauf mit einer Kupferschicht bedampft, - auf der Kupferschicht zu beiden Seiten des HalSSiterplättchens wie auch auf dem Kupfer stiel der Anodenseite wird eine Schicht aus reinem Zinn oder einer zinnhaltigen Legierung abgeschieden.2. A method for producing a semiconductor diode according to claim 1, their semiconductor body together with the connecting wires in a glass tube is melted down, characterized by the following features: - on the front of the semiconductor body is a titanium layer to form the anode area and on this a copper layer is vapor-deposited, - on the copper layer will grow on the copper stem area determined by means of photolithography processes left, - the rear side of the semiconductor body is used to form the cathode region with a titanium layer and then vapor-deposited with a copper layer - on the copper layer on both sides of the HalSSiter plate as well as on the copper Stalk the anode side becomes a layer of pure tin or a tin-containing one Alloy deposited. I I. 3. Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß der Kupferstiel stromlos oder elektrolytisch abge-#schieden wird.:3. The method according to claim 2, characterized in that the copper handle electrolessly or electrolytically deposited:
DE19813122387 1981-06-05 1981-06-05 Glass-encapsulated semiconductor diode and method of manufacturing it Withdrawn DE3122387A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3402970A1 (en) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg CONTACTING SYSTEM FOR 2-POLE ELECTRONIC COMPONENTS, PARTICULARLY SEMICONDUCTOR COMPONENTS
WO1996029735A1 (en) * 1995-03-20 1996-09-26 Philips Electronics N.V. Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminium bonding layer
EP1367030A2 (en) * 2001-10-11 2003-12-03 Schott Glas Lead-free glass tube, its use and diodes

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Publication number Priority date Publication date Assignee Title
FR1417621A (en) * 1963-12-17 1965-11-12 Western Electric Co Semiconductor contacts, and protective coatings
US3483442A (en) * 1967-08-24 1969-12-09 Westinghouse Electric Corp Electrical contact for a hard solder electrical device
DE1639262A1 (en) * 1967-01-13 1971-02-04 Ibm Semiconductor component with a large area electrode
DE1614668B2 (en) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Semiconductor arrangement with large-area, easily solderable contact electrodes and process for their production
FR2307375A1 (en) * 1975-04-07 1976-11-05 Hitachi Ltd GLASS COATED SEMICONDUCTOR DEVICE
DE2643147A1 (en) * 1975-09-25 1977-04-07 Texas Instruments Inc SEMICONDUCTOR DIODE

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1417621A (en) * 1963-12-17 1965-11-12 Western Electric Co Semiconductor contacts, and protective coatings
DE1639262A1 (en) * 1967-01-13 1971-02-04 Ibm Semiconductor component with a large area electrode
US3483442A (en) * 1967-08-24 1969-12-09 Westinghouse Electric Corp Electrical contact for a hard solder electrical device
DE1614668B2 (en) * 1967-12-01 1974-08-29 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Semiconductor arrangement with large-area, easily solderable contact electrodes and process for their production
FR2307375A1 (en) * 1975-04-07 1976-11-05 Hitachi Ltd GLASS COATED SEMICONDUCTOR DEVICE
DE2643147A1 (en) * 1975-09-25 1977-04-07 Texas Instruments Inc SEMICONDUCTOR DIODE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IBM Technical Disclosure Bulletin, Band 15, Nr. 10, März 1973, S. 3206-3207 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3402970A1 (en) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg CONTACTING SYSTEM FOR 2-POLE ELECTRONIC COMPONENTS, PARTICULARLY SEMICONDUCTOR COMPONENTS
EP0152972A2 (en) * 1984-01-28 1985-08-28 Philips Patentverwaltung GmbH Contact system for 2-pole electronic chips, in particular for semi-conductor chips
EP0152972A3 (en) * 1984-01-28 1987-01-21 Philips Patentverwaltung Gmbh Contact system for 2-pole electronic chips, in particular for semi-conductor chips
WO1996029735A1 (en) * 1995-03-20 1996-09-26 Philips Electronics N.V. Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminium bonding layer
EP1367030A2 (en) * 2001-10-11 2003-12-03 Schott Glas Lead-free glass tube, its use and diodes
EP1367030A3 (en) * 2001-10-11 2004-02-04 Schott Glas Lead-free glass tube its use and diodes
US6864197B2 (en) 2001-10-11 2005-03-08 Schott Glas Lead-free glass tubing, especially for encapsulating diodes and diodes encapsulated with same
US7102242B2 (en) * 2001-10-11 2006-09-05 Schott Ag Lead-free glass tubing, especially for encapsulating diodes and diodes encapsulated with same

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